Microacoustic filter with a cavity stack
An apparatus is disclosed for implementing a microacoustic filter with a cavity stack. In an example aspect, the apparatus includes a microacoustic filter with an electrode structure, a cavity stack, a buffer layer, and a piezoelectric layer. The cavity stack comprises a conductive layer, a substrate layer, and at least two pillars extending past a plane defined by a surface of the substrate layer and towards the conductive layer to form a cavity between the substrate layer and the conductive layer. The buffer layer is disposed between the conductive layer of the cavity stack and the electrode structure. The piezoelectric layer is disposed between the buffer layer and the electrode structure.
1. An apparatus comprising:
a microacoustic filter comprising:
an electrode structure;
a cavity stack comprising:
a conductive layer comprising doped silicon (Si);
a substrate layer; and
at least two pillars extending past a plane defined by a surface of the substrate layer and towards the conductive layer to form a cavity between the substrate layer and the conductive layer;
a buffer layer disposed between the conductive layer of the cavity stack and the electrode structure; and
a piezoelectric layer disposed between the buffer layer and the electrode structure.
2. The apparatus of claim 1 , wherein the microacoustic filter is configured to excite a plate mode in the piezoelectric layer.
3. The apparatus of claim 1 , wherein the piezoelectric layer comprises aluminium scandium nitride (AlScN).
4. The apparatus of claim 1 , wherein the conductive layer has a resistivity that is less than approximately 0.1 ohm centimeter.
5. The apparatus of claim 1 , further comprising:
a wireless transceiver coupled to at least one antenna, the wireless transceiver comprising the microacoustic filter and configured to filter, using the microacoustic filter, a wireless signal communicated via the at least one antenna.
6. The apparatus of claim 1 , wherein the doped silicon (Si) has a doping concentration that is greater than approximately 10 18 atoms per cubic centimeter.
7. The apparatus of claim 1 , wherein the conductive layer and the buffer layer are jointly configured to enable epitaxial growth of the piezoelectric layer.
8. The apparatus of claim 1 , wherein the doped silicon comprises a single crystal material.
9. The apparatus of claim 1 , wherein the doped silicon has Miller indices of (1 1 1).
10. The apparatus of claim 1 , wherein the buffer layer comprises at least one of the following materials:
aluminium (Al) or aluminium nitride (AlN);
gallium (Ga) or gallium nitride (GaN);
hafnium (Hf) or hafnium nitride (HfN);
molybdenum (Mo) or molybdenum nitride (MoN);
niobium (Nb) or niobium nitride (NbN);
silicon carbide (SiC);
scandium (Sc) or scandium nitride (ScN);
titanium (Ti) or titanium nitride (TiN);
zinc (Zi) or zinc oxide (ZnO); or
zirconium (Zr) or zirconium nitride (ZrN).
11. The apparatus of claim 1 , wherein:
the electrode structure comprises multiple fingers arranged across a plane having a first axis that is perpendicular to the multiple fingers and a second axis that is parallel to the multiple fingers; and
the multiple fingers are positioned between the at least two pillars along the first axis.
12. The apparatus of claim 1 , wherein the microacoustic filter comprises at least one of the following:
a first compensation layer disposed on the electrode structure;
a second compensation layer disposed between the electrode structure and the piezoelectric layer; or
a third compensation layer disposed between the conductive layer and the cavity.
13. The apparatus of claim 12 , wherein the first compensation layer, the second compensation layer, or the third compensation layer comprises silicon dioxide (SiO 2 ) or doped silicon dioxide.
14. The apparatus of claim 1 , wherein:
the microacoustic filter comprises multiple cascaded resonators; and
a resonator of the multiple cascaded resonators comprises the cavity stack, the piezoelectric layer, and the buffer layer.
15. The apparatus of claim 1 , wherein the microacoustic filter is configured to have a resonant frequency between approximately 500 megahertz and 2.6 gigahertz.
16. The apparatus of claim 15 , wherein:
a thickness of the conductive layer is between approximately 0.5 and 5 micrometers; and
a thickness of the piezoelectric layer is between approximately 0.5 and 5 micrometers.
17. The apparatus of claim 16 , wherein a thickness of the buffer layer is less than the thickness of the piezoelectric layer.
18. The apparatus of claim 16 , wherein the thickness of the conductive layer and the thickness of the piezoelectric layer are approximately equal.
19. An apparatus comprising:
a microacoustic filter configured to generate a filtered signal from a radio-frequency signal, the microacoustic filter comprising:
means for converting the radio-frequency signal to an acoustic wave and converting a formed acoustic wave into the filtered signal;
means for exciting a plate mode using a piezoelectric layer to produce the formed acoustic wave;
means for enabling epitaxial growth of the piezoelectric layer; and
means for confining energy of the plate mode within the means for exciting the plate mode and the means for enabling epitaxial growth, the means for confining energy comprising a conductive layer comprising a single crystal material.
20. The apparatus of claim 19 , wherein:
the microacoustic filter comprises a substrate layer; and
the means for confining energy of the plate mode comprises means for suspending the means for enabling epitaxial growth apart from the substrate layer.
21. A method of manufacturing a microacoustic filter, the method comprising:
providing a cavity stack comprising a conductive layer that comprises a single crystal material, a substrate layer, and at least two pillars extending past a plane defined by a surface of the substrate layer and towards the conductive layer to form a cavity between the substrate layer and the conductive layer;
disposing a buffer layer on a surface of the conductive layer; and
disposing a piezoelectric layer on a surface of the buffer layer using epitaxy.
22. The method of claim 21 , wherein the conductive layer comprises doped silicon (Si) having a doping concentration that is greater than approximately 10 18 atoms per cubic centimeter.
23. The method of claim 21 , wherein the buffer layer comprises at least one of the following materials:
aluminium (Al) or aluminium nitride (AlN);
gallium (Ga) or gallium nitride (GaN);
hafnium (Hf) or hafnium nitride (HfN);
molybdenum (Mo) or molybdenum nitride (MoN);
niobium (Nb) or niobium nitride (NbN);
silicon carbide (SiC);
scandium (Sc) or scandium nitride (ScN);
titanium (Ti) or titanium nitride (TiN);
zinc (Zi) or zinc oxide (ZnO); or
zirconium (Zr) or zirconium nitride (ZrN).
24. A piezoelectric apparatus comprising:
an electrode structure;
a buffer layer configured to enable epitaxial growth of aluminium scandium nitride (AlScN);
a piezoelectric layer disposed between the buffer layer and the electrode structure, the piezoelectric layer comprising the aluminium scandium nitride (AlScN) having a crystal-axis orientation that is approximately normal to a planar surface of the piezoelectric layer; and
a cavity stack comprising:
a conductive layer comprising doped silicon (Si);
a substrate layer comprising silicon (Si); and
at least two pillars comprising silicon dioxide (SiO 2 ) and extending past a plane defined by a surface of the substrate layer and towards the conductive layer to form a cavity between the substrate layer and the conductive layer, wherein the buffer layer is disposed between the cavity stack and the piezoelectric layer.
25. The piezoelectric apparatus of claim 24 , wherein the piezoelectric layer is configured to excite a plate mode.