Acoustic wave device
An acoustic wave device includes: a piezoelectric film made of an aluminum nitride film containing a divalent element and a tetravalent element, or a divalent element and a pentavalent element; and an electrode that excites an acoustic wave propagating through the piezoelectric film.
1. An acoustic wave device comprising:
a piezoelectric film made of an aluminum nitride film containing a divalent element and one of a tetravalent or pentavalent element; and
electrodes connected to the piezoelectric film to excite an acoustic wave propagating through the piezoelectric film,
wherein the divalent element and one of the tetravalent or pentavalent element are substituted for aluminum atoms of the aluminum nitride film.
2. The acoustic wave device according to claim 1 , wherein
the piezoelectric film is the aluminum nitride film containing the divalent element and the tetravalent element, and contains at least one of titanium, zirconium, and hafnium as the tetravalent element.
3. The acoustic wave device according to claim 2 , wherein
the piezoelectric film contains at least one of calcium, magnesium, strontium, and zinc as the divalent element.
4. The acoustic wave device according to claim 1 , wherein
the piezoelectric film is the aluminum nitride film containing the divalent element and the pentavalent element, and contains at least one of tantalum, niobium, and vanadium as the pentavalent element.
5. The acoustic wave device according to claim 4 , wherein
the piezoelectric film contains at least one of magnesium and zinc as the divalent element.
6. The acoustic wave device according to claim 1 , wherein
the piezoelectric film has a piezoelectric constant e 33 greater than 1.55 C/m 2 .
7. The acoustic wave device according to claim 1 , wherein
the piezoelectric film has a ratio of a lattice constant in a c-axis direction to a lattice constant in an a-axis direction less than 1.6.
8. The acoustic wave device according to claim 1 , wherein
the piezoelectric film is the aluminum nitride film containing the divalent element and the tetravalent element, and
a total of concentrations of the divalent element and the tetravalent element is greater than or equal to 3 atomic % and less than or equal to 35 atomic % when a total number of atoms of the divalent element, the tetravalent element, and aluminum in the aluminum nitride film defines 100 atomic %.
9. The acoustic wave device according to claim 1 , wherein
the piezoelectric film is the aluminum nitride film containing the divalent element and the tetravalent element, and
a ratio of a concentration of the tetravalent element to a total of concentrations of the divalent element and the tetravalent element is greater than or equal to 0.35 and less than or equal to 0.75 when a total number of atoms of the divalent element, the tetravalent element, and aluminum in the aluminum nitride film defines 100 atomic %.
10. The acoustic wave device according to claim 1 , wherein
the piezoelectric film has a crystal structure with a c-axis orientation.
11. The acoustic wave device according to claim 1 , further comprising
a temperature compensation film having a temperature coefficient of an elastic constant opposite in sign to a temperature coefficient of an elastic constant of the piezoelectric film.
12. The acoustic wave device according to claim 11 , wherein
the temperature compensation film contacts the piezoelectric film.
13. The acoustic wave device according to claim 11 , wherein
the temperature compensation film contains mainly silicon oxide.
14. The acoustic wave device according to claim 1 , wherein
the electrode includes an upper electrode and a lower electrode facing each other across the piezoelectric film.
15. The acoustic wave device according to claim 14 , further comprising:
a temperature compensation film having a temperature coefficient of an elastic constant opposite in sign to a temperature coefficient of an elastic constant of the piezoelectric film; and
conductive films that are located on a top surface and a bottom surface of the temperature compensation film and electrically connected to each other.
16. The acoustic wave device according to claim 1 , further comprising:
a first piezoelectric thin film resonator and a second piezoelectric thin film resonator, each including the piezoelectric film and the electrode that includes an upper electrode and a lower electrode facing each other across the piezoelectric film, wherein
the first piezoelectric thin film resonator and the second piezoelectric thin film resonator are stacked, and
a decoupler film is located between the upper electrode included in the first piezoelectric thin film resonator and the lower electrode included in the second piezoelectric thin film resonator.
17. The acoustic wave device according to claim 1 , wherein
the electrode is a comb-shaped electrode located on the piezoelectric film.
18. The acoustic wave device according to claim 17 , wherein
the acoustic wave excited by the electrode when the element is added to the aluminum nitride constituting the film which is then charged with electricity is a surface acoustic wave or a Lamb wave.
19. An acoustic wave device comprising:
a piezoelectric film made of an aluminum nitride film containing an element capable of at least increasing a permittivity or decreasing an acoustic velocity when the element is added to the aluminum nitride constituting the film which is then charged with electricity; and
electrodes connected to the piezoelectric film to excite an acoustic wave propagating through the piezoelectric film, wherein
a resonance frequency of the acoustic wave is less than or equal to 1.5 GHz, and
the element is substituted for aluminum atoms of the aluminum nitride film.
20. The acoustic wave device according to claim 19 , wherein
the piezoelectric film has a permittivity ∈ 33 greater than 8.42×10 −11 F/m.
21. The acoustic wave device according to claim 19 , wherein
the piezoelectric film has an acoustic velocity less than 11404 m/s.
22. The acoustic wave device according to claim 19 , wherein
the piezoelectric film contains a divalent element and a tetravalent element as the element.
23. The acoustic wave device according to claim 22 , wherein
the divalent element is at least one of calcium, magnesium, strontium, and zinc, and
the tetravalent element is at least one of titanium, zirconium, and hafnium.
24. The acoustic wave device according to claim 19 , wherein
the piezoelectric film contains a trivalent element as the element.
25. The acoustic wave device according to claim 24 , wherein
the trivalent element is at least one of yttrium and scandium.
26. The acoustic wave device according to claim 19 , wherein
the piezoelectric film has a crystal structure with a c-axis orientation.
27. The acoustic wave device according to claim 19 , further comprising
a temperature compensation film having a temperature coefficient of an elastic constant opposite in sign to a temperature coefficient of an elastic constant of the piezoelectric film.
28. The acoustic wave device according to claim 27 , wherein
the temperature compensation film contacts the piezoelectric film.
29. The acoustic wave device according to claim 27 , wherein
the temperature compensation film contains mainly silicon oxide.
30. The acoustic wave device according to claim 19 , wherein
the electrode includes an upper electrode and a lower electrode facing each other across the piezoelectric film.
31. The acoustic wave device according to claim 30 , further comprising:
a temperature compensation film having a temperature coefficient of an elastic constant opposite in sign to a temperature coefficient of an elastic constant of the piezoelectric film; and
conductive films that are located on a top surface and a bottom surface of the temperature compensation film and electrically connected to each other.
32. The acoustic wave device according to claim 19 , further comprising:
a first piezoelectric thin film resonator and a second piezoelectric thin film resonator, each including the piezoelectric film and the electrode that includes upper electrode and a lower electrode facing each other across the piezoelectric film, wherein
the first piezoelectric thin film resonator and the second piezoelectric thin film resonator are stacked, and
a decoupler film is located between the upper electrode included in the first piezoelectric thin film resonator and the lower electrode included in the second piezoelectric thin film resonator.
33. The acoustic wave device according to claim 19 , wherein
the electrode is a comb-shaped electrode located on the piezoelectric film.
34. The acoustic wave device according to claim 33 , wherein
the acoustic wave excited by the electrode when the element is added to the aluminum nitride constituting the film which is then charged with electricity is a surface acoustic wave or a Lamb wave.
35. An acoustic wave device comprising:
a piezoelectric film is an aluminum nitride film containing a divalent element and a tetravalent element, and
electrodes connected to the piezoelectric film to excite an acoustic wave propagating through the piezoelectric film, wherein
a total of concentrations of the divalent element and the tetravalent element is greater than or equal to 3 atomic % and less than or equal to 35 atomic % when a total number of atoms of the divalent element, the tetravalent element, and aluminum in the aluminum nitride film defines 100 atomic %.
36. An acoustic wave device comprising:
a piezoelectric film is an aluminum nitride film containing a divalent element and a tetravalent element, and
electrodes connected to the piezoelectric film to excite an acoustic wave propagating through the piezoelectric film, wherein
a ratio of a concentration of the tetravalent element to a total of concentrations of the divalent element and the tetravalent element is greater than or equal to 0.35 and less than or equal to 0.75 when a total number of atoms of the divalent element, the tetravalent element, and aluminum in the aluminum nitride film defines 100 atomic %.