Method for improving ohmic-contact behaviour between a contact grid and a emitter layer of a silicon solar cell
The invention relates to a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell. The object of the invention is to propose a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell, in which the effects on materials caused by irradiation of the sun-facing side are further minimized. In addition, the method should also be applicable to silicon solar cells in which the emitter layer has a high sheet resistance. This object is achieved by first providing the silicon solar cell with the emitter layer, the contact grid and a rear contact, and electrically connecting the contact grid to one pole of a voltage source, then a contacting device that is electrically connected to the other pole of the voltage source is connected to the rear contact, and with the voltage source, a voltage is applied directed contrary to the forward direction of the silicon solar cell that is less than the breakdown voltage of the silicon solar cell and, when applying this voltage, a point light source is guided over the sun-facing side of the silicon solar cell and thereby a section of a subsection of the sun-facing side is illuminated and thus a current flow is induced in the subsection where the current flow relative to the section has a current density of 200 A/cm 2 to 20,000 A/cm 2 and acts on the subsection for 10 ns to 10 ms.
1. A process for improving the ohmic-contact behavior between a contact grid and an emitter layer in a bifacial silicon solar cell, the process comprising:
providing the bifacial silicon solar cell having an emitter layer, a contact grid and a rear contact;
electrically connecting the contact grid to one pole of a voltage source;
electrically connecting a contacting device to another pole of the voltage source and to the rear contact;
applying a voltage with the voltage source directed contrary to a forward direction of the bifacial silicon solar cell that is less than the breakdown voltage of the silicon solar cell; and,
while applying the voltage, guiding a point light source over a sun-facing side of the bifacial silicon solar cell thereby illuminating a section of a subsection of the one side to induce a current flow in the subsection, where the current flow relative to the section has a current density of 200 A/cm 2 to 20,000 A/cm 2 and acts on the subsection for 10 ns to 10 ms
wherein the sun-facing side of the bifacial silicon solar cell is a front side or a rear side of the bifacial silicon solar cell.
2. The process of claim 1 , wherein the point light source is a laser, a light-emitting diode, or a flash lamp.
3. The process of claim 1 , wherein the point light source demonstrates a power density of 500 W/cm 2 to 200,000 W/cm 2 on the section.
4. The process of claim 1 , wherein the point light source emits radiation with a wavelength in the range from 400 nm to 1500 nm.
5. The process of claim 1 , wherein the section has an area ranging from 10 3 μm 2 to 10 4 μm 2 .
6. The process of claim 1 , wherein the voltage directed contrary to the forward direction of the bifacial silicon solar cell ranges from 1 V to 20 V.
7. The process of claim 1 , wherein the bifacial silicon solar cell comprises an n-doped silicon substrate.
8. The process of claim 1 , wherein the emitter layer has a sheet resistance of more than 100 Ω/sq.
9. The process of claim 1 , wherein the bifacial silicon solar cell comprises a p-doped silicon substrate.
10. The process of claim 1 , wherein the point light source is guided directly next to contact fingers of the contact grid on the sun-facing side of the bifacial silicon solar cell.