Dual band photodiode element and method of making the same
Mercury cadmium telluride (MCT) dual band photodiode elements are described that include an n-type barrier region interposed between first and second p-type regions. The first p-type region is arranged to absorb different IR wavelengths to the second p-type region in order that the photodiode element can sense two IR bands. A portion of the second p-type region is type converted using ion-beam milling to produce a n-type region that interfaces with the second p-type region and the n-type barrier region.
1. A photodiode element that is responsive to dual band radiation, the photodiode element comprising:
a first p-type region;
a second p-type region;
a first n-type region arranged between the first p-type region and the second p-type region to provide PN-junctions;
one or more of the first p-type region, second p-type region and first n-type region being configured to provide a first absorbing region for absorbing a shorter wave band relative to a longer waveband, and a second absorbing region for absorbing the longer waveband, the first absorbing region and the second absorbing region being arranged on opposing sides of an n-type barrier provided by the n-type region, the n-type barrier being substantially non-absorbent to the longer wave band; the photodiode comprising:
a second n-type region that interfaces with the first n-type region; and
two ohmic electrical contacts, a first arranged on and contacting the second p-type region and a second arranged on and contacting the second n-type region.
2. A photodiode element according to claim 1 , wherein the second n-type region interfaces with both the second p-type region and the first n-type region.
3. A photodiode element according to claim 1 , wherein the first n-type region interfaces with at least a portion of the second p-type region that has been type converted.
4. A photodiode element according to claim 1 , wherein the first p-type region provides, at least in part, the first absorbing region and the second p-type region provides, at least in part, the second absorbing region.
5. A photodiode element according to claim 1 , wherein the second n-type region and the second p-type region interfaces with the n-type barrier.
6. A photodiode element according claim 5 , wherein the first n-type region consists of the n-type barrier layer.
7. A photodiode element according to claim 1 , wherein the first absorbing region and second absorbing region are provided, at least in part, by the first n-type region.
8. A photodiode element according to claim 7 , wherein the first absorbing region is provided by the first p-type layer and the first n-type region, and the second absorbing region is provided by the second p-type region and the first n-type region.
9. A photodiode element according to claim 1 , wherein one or more of the first p-type region; second p-type region first n-type region and second n-type region are formed from a mercury-cadmium-telluride semiconductor.
10. A photodiode element according to claim 1 , being configured with a mesa photodiode element form.
11. A detector array comprising:
a combination of multiple photodiode elements, each configured according to claim 1 .