Breakdown voltage improvement in vertical trench-gate devices
In a general aspect, a vertical transistor can include a semiconductor region of a first conductivity type, and a plurality of perpendicularly intersecting trenches having a shielded gate structure of the vertical transistor disposed therein. A mesa of the semiconductor region can be defined by the plurality of perpendicularly intersecting trenches. The mesa can include a proximal end portion having a first doping concentration of the first conductivity type, a distal end portion having the first doping concentration of the first conductivity type, and a central portion disposed between the proximal end portion and the distal end portion. The central portion can have a second doping concentration of the first conductivity type that is less than the first doping concentration.
1 . A vertical transistor comprising:
a semiconductor region of a first conductivity type;
a plurality of perpendicularly intersecting trenches having a shielded gate structure of the vertical transistor disposed therein; and
a mesa of the semiconductor region defined by the plurality of perpendicularly intersecting trenches, the mesa including:
a first end portion having a first doping concentration of the first conductivity type;
a second end portion having the first doping concentration of the first conductivity type; and
a central portion disposed between the first end portion and the second end portion, the central portion having a second doping concentration of the first conductivity type that is less than the first doping concentration.
2 . The vertical transistor of claim 1 , further comprising:
a body region of the vertical transistor disposed in an upper portion of the mesa, the body region being of a second conductivity type opposite the first conductivity type; and
a source region of the vertical transistor disposed in the body region.
3 . The vertical transistor of claim 1 , wherein:
the mesa is aligned along a longitudinal axis;
the first end portion has a first length along the longitudinal axis;
the second end portion has the first length along the longitudinal axis; and
the central portion has a second length along the longitudinal axis that is greater than the first length.
4 . The vertical transistor of claim 3 , wherein:
the first length is less than 0.5 micrometers (μm); and
the second length is greater than 3 μm.
5 . The vertical transistor of claim 1 , wherein the first doping concentration is in a range of twenty percent to one-hundred fifty percent greater than the second doping concentration.
6 . The vertical transistor of claim 1 , wherein the mesa is an active mesa of the vertical transistor.
7 . The vertical transistor of claim 1 , wherein:
the mesa is an inactive mesa of the vertical transistor;
a first trench of the plurality of perpendicularly intersecting trenches parallel to, and adjacent to a first side of the inactive mesa includes a contact to a shield electrode of the shielded gate structure; and
a second trench of the plurality of perpendicularly intersecting trenches parallel to, and adjacent to a second side of the inactive mesa includes a gate pass-through of the shielded gate structure, the second side being opposite the first side.
8 . A vertical transistor comprising:
a semiconductor region;
a first trench disposed in the semiconductor region, the first trench being aligned along a first longitudinal axis;
a second trench disposed in the semiconductor region, the second trench being spaced from the first trench and aligned along a second longitudinal axis that is parallel to the first longitudinal axis;
a third trench disposed in the semiconductor region, the third trench being aligned along a third longitudinal axis that is perpendicular to the first longitudinal axis, the third trench intersecting the first trench and the second trench; and
a fourth trench disposed in the semiconductor region, the fourth trench being spaced from the third trench and aligned along a fourth longitudinal axis that is parallel to the third longitudinal axis, the fourth trench intersecting the first trench and the second trench,
the first trench, the second trench, the third trench and the fourth trench defining a mesa of the semiconductor region, the mesa including:
a first end portion having a first doping concentration of a first conductivity type;
a second end portion having the first doping concentration of the first conductivity type; and
a central portion disposed between the first end portion and the second end portion, the central portion having a second doping concentration of the first conductivity type that is less than the first doping concentration.
9 . The vertical transistor of claim 8 , wherein the mesa is a first mesa, the vertical transistor further comprising:
a fifth trench disposed in the semiconductor region, the fifth trench being spaced from the fourth trench and aligned along a fifth longitudinal axis parallel that is parallel to the fourth longitudinal axis, the fifth trench intersecting the first trench and the second trench,
the first trench, the second trench, the fourth trench and the fifth trench defining a second mesa of the semiconductor region, the second mesa including:
a first end portion having the first doping concentration of the first conductivity type;
a second end portion having the first doping concentration of the first conductivity type; and
a central portion disposed between the first end portion of the second mesa and the second end portion of the second mesa, the central portion of the second mesa having the second doping concentration of the first conductivity type,
the second mesa being aligned along a seventh longitudinal axis that is co-linear with a longitudinal axis of the first mesa.
10 . The vertical transistor of claim 8 , wherein the mesa is a first mesa, the vertical transistor further comprising:
a fifth trench disposed in the semiconductor region, the fifth trench intersecting the fourth trench and being aligned along a fifth longitudinal axis that is perpendicular to the fourth longitudinal axis;
a sixth trench disposed in the semiconductor region, the sixth trench intersecting the fourth trench and being aligned along a sixth longitudinal axis that is perpendicular to the fourth longitudinal axis, the sixth trench being spaced from the fifth trench; and
a seventh trench disposed in the semiconductor region, the seventh trench being spaced from the fourth trench and aligned along a seventh longitudinal axis parallel to the fourth longitudinal axis, the seventh trench intersecting the fifth trench and the sixth trench,
the fourth trench, the fifth trench, the sixth trench and the seventh trench defining a second mesa of the semiconductor region, the second mesa including:
a first end portion having the first doping concentration of the first conductivity type;
a second end portion having the first doping concentration of the first conductivity type; and
a central portion disposed between the first end portion of the second mesa and the second end portion of the second mesa, the central portion of the second mesa having the second doping concentration of the first conductivity type,
the second mesa being aligned along a seventh longitudinal axis that is co-linear with the first longitudinal axis of the first trench, or co-linear with the second longitudinal axis of the second trench.
11 . The vertical transistor of claim 8 , wherein:
the first trench and the second trench have a first width; and
the third trench and the fourth trench have a second width that is greater than the first width.
12 . The vertical transistor of claim 8 , wherein:
the first trench, the second trench, the third trench, and the fourth trench have a same width.
13 . The vertical transistor of claim 8 , wherein:
the first end portion and the second end portion have a first width; and
the central portion has a second width that is greater than the first width.
14 . The vertical transistor of claim 8 , wherein:
the mesa is aligned along a fifth longitudinal axis;
the first end portion has a first length along the fifth longitudinal axis;
the second end portion has the first length along the fifth longitudinal axis; and
the central portion has a second length along the fifth longitudinal axis that is greater than the first length.
15 . The vertical transistor of claim 14 , wherein:
the first length is less than 0.5 micro-meters (μm); and
the second length is greater than 3 μm.
16 . The vertical transistor of claim 8 , wherein the first doping concentration is in a range of twenty percent to one-hundred fifty percent greater than the second doping concentration.
17 . The vertical transistor of claim 8 , further comprising a region of a second conductivity type opposite the first conductivity type disposed in an upper portion of the mesa.
18 . A method for producing a vertical transistor, the method comprising:
defining a semiconductor mesa of a conductivity type by forming, in a semiconductor region of the conductivity type, a plurality of perpendicularly intersecting trenches; and
performing at least one implant of the conductivity type to:
dope a first end of the semiconductor mesa with a first doping concentration; and
dope a second end of the semiconductor mesa with the first doping concentration,
a central portion of the semiconductor mesa disposed between the first end and the second end and having a second doping concentration that is less than the first doping concentration.
19 . The method of claim 18 , wherein the second doping concentration is an initial doping concentration of the semiconductor region.
20 . The method of claim 18 , wherein performing the at least one implant includes:
forming a mask to exclude the at least one implant from the central portion of the semiconductor mesa; and
performing the at least one implant orthogonal to a surface of the semiconductor region.
21 . The method of claim 20 , wherein the at least one implant is performed:
after formation of a shield electrode in the plurality of perpendicularly intersecting trenches; or
after formation of the shield electrode and a gate electrode in the plurality of perpendicularly intersecting trenches.
22 . The method of claim 18 , wherein:
the semiconductor mesa is aligned along a longitudinal axis; and
performing the at least one implant includes:
performing a first implant in a first direction parallel to the longitudinal axis; and
performing a second implant in a second direction parallel to the longitudinal axis, the second direction being opposite the first direction,
the first implant and the second implant being performed at an angle between twenty degrees and sixty degrees relative to a line that is orthogonal to a surface of the semiconductor region.
23 . The method of claim 22 , further comprising:
prior to performing the at least one implant, forming a sacrificial material layer in the plurality of perpendicularly intersecting trenches; and
after performing the at least one implant, removing the sacrificial material layer.
24 . The method of claim 22 , wherein forming the plurality of perpendicularly intersecting trenches includes:
prior to performing the at least one implant, performing a first trench etch to a first depth in the semiconductor region; and
after performing the at least one implant, a second trench etch to a second depth in the semiconductor region, the second depth being greater than the first depth.
25 . The method of claim 18 , wherein:
the semiconductor mesa is aligned along a longitudinal axis; and
performing the at least one implant includes:
performing a first implant in a first direction that is at an angle of sixty degrees relative to a line that is orthogonal to a surface of the semiconductor region and at an angle that is between ninety and one-hundred and twenty degrees relative to the longitudinal axis; and
performing a second implant in a second direction that is at the angle of sixty degrees relative to the line that is orthogonal to the surface of the semiconductor region and at an angle that is between two-hundred and forty degrees and two-hundred and seventy degrees relative to the longitudinal axis.