Transferable ultra-thin substrates and related techniques

1. A device, comprising:

a flexible carrier having a root mean square (RMS) roughness of less than 5 nm;

a release layer that is formed on the flexible carrier;

a releasable substrate formed over the release layer; and

a semiconductor structure that is formed over the releasable substrate.

2. The device of claim 1 , wherein the release layer is configured to facilitate clean delamination of the releasable substrate and the semiconductor structure from the flexible carrier, and the release layer is formed of a fluoropolymer material.

3. The device of claim 1 , wherein the release layer is configured to facilitate clean delamination of the releasable substrate and the semiconductor structure from the flexible carrier, and the release layer is formed of a detergent material.

4. The device of claim 1 , wherein the release layer is configured to facilitate clean delamination of the releasable substrate and the semiconductor structure from the flexible carrier, and the releasable substrate is formed of parylene.

5. The device of claim 1 , wherein the flexible carrier is formed of polyethylene terephthalate (PET).

6. The device of claim 1 , wherein the semiconductor structure includes a photovoltaic structure having a transparent electrode layer, a first transport layer, an active layer, and a second transport layer, the transparent electrode layer being disposed between: (A) the releasable substrate and (B) the first transport layer, the active layer, and the second transport layer.

7. The device of claim 1 , wherein the semiconductor structure includes a photovoltaic structure having a first transport layer, an active layer, a second transport layer, and a back contact electrode layer, the first transport layer, the active layer, and the second transport layer being disposed between the releasable substrate and the back contact electrode layer.

8. A method, comprising:

providing a flexible carrier having a root mean square (RMS) roughness of less than 5 nm;

forming a release layer over the flexible carrier;

forming a releasable substrate over the release layer; and

forming a semiconductor structure over the releasable substrate to produce a transferable semiconductor device.

9. The method of claim 8 , further comprising:

laminating the transferable semiconductor device and the releasable substrate over a permanent substrate; and

delaminating the flexible carrier from the transferable semiconductor device.

10. The method of claim 9 , wherein the permanent substrate includes a sheet of fabric.

11. The method of claim 9 , wherein the permanent substrate includes a panel of rigid or semi-rigid material.

12. The method of claim 8 , further comprising:

delaminating the flexible carrier from the transferable semiconductor device; and

laminating the semiconductor structure and the releasable substrate over a permanent substrate, the permanent substrate being formed of a composite fabric.

13. The method of claim 8 , wherein the release layer is configured to facilitate clean delamination of the releasable substrate and the semiconductor structure from the flexible carrier, and the release layer is formed of a fluoropolymer material.

14. The method of claim 8 , wherein the release layer is configured to facilitate clean delamination of the releasable substrate and the semiconductor structure from the flexible carrier, and the release layer is formed of a detergent material.

15. The method of claim 8 , wherein the release layer is configured to facilitate clean delamination of the releasable substrate and the semiconductor structure from the flexible carrier, and the releasable substrate is formed of parylene.

16. The method of claim 8 , wherein the flexible carrier is formed of polyethylene terephthalate (PET).

17. The method of claim 8 , wherein the semiconductor structure includes a photovoltaic structure having a transparent electrode layer, a first transport layer, an active layer, and a second transport layer, the transparent electrode layer being disposed between: (A) the releasable substrate and (B) the first transport layer, the active layer, and the second transport layer.

18. The method of claim 8 , wherein the semiconductor structure includes a photovoltaic structure having a first transport layer, an active layer, a second transport layer, and a back contact electrode layer, the first transport layer, the active layer, and the second transport layer being disposed between the releasable substrate and the back contact electrode layer.

19. A device, comprising:

a permanent substrate that is formed of a composite fabric;

a transferable photovoltaic device that is laminated onto the permanent substrate,

wherein the transferable photovoltaic device includes a transparent electrode layer, a first transport layer, an active layer, a second transport layer, and a back contact electrode layer that are formed on a releasable substrate; and

wherein the transparent electrode layer, the first transport layer, the active layer, the second transport layer, and the back contact electrode layer are disposed between the releasable substrate and the permanent substrate.

20. The device of claim 19 , wherein the permanent substrate includes a sheet of fabric, and the releasable substrate is 1-5 microns thick.