Method of manufacturing integrated circuit configured with two or more single crystal acoustic resonator devices
A method of fabricating a configurable single crystal acoustic resonator (SCAR) device integrated circuit. The method includes providing a bulk substrate structure having first and second recessed regions with a support member disposed in between. A thickness of single crystal piezo material is formed overlying the bulk substrate with an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region. A first electrode with a first terminal is formed overlying an upper portion of the piezo material, while a second electrode with a second terminal is formed overlying a lower portion of the piezo material. An acoustic reflector structure and a dielectric layer are formed overlying the resulting bulk structure. The resulting device includes a plurality of single crystal acoustic resonator devices, numbered from (R 1 ) to (RN), where N is an integer greater than 1.
1. A method of fabricating a configurable monolithic filter ladder network comprising a plurality of crystalline acoustic resonator (SCAR) devices, numbered from R 1 to RN, where N is an integer greater than 1, configured on a common substrate member, the method comprising:
forming a bulk substrate structure, having a surface region, and a thickness of material, the bulk substrate structure having a first recessed region and a second recessed region, and a support member disposed between the first recessed region and the second recessed region;
forming a thickness of crystalline piezo material overlying the surface region, the thickness of crystalline piezo material having an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region;
forming a first electrode member overlying an upper portion of the thickness of crystalline piezo material;
forming a second electrode member overlying a lower portion of the thickness of crystalline piezo material to sandwich the thickness of crystalline piezo material with the first electrode member and the second electrode member, the second electrode member extending from the lower portion that includes the exposed backside region to the contact region;
forming a first electrode terminal electrically coupled with the first electrode member;
forming a second electrode terminal electrically coupled to the second electrode member at the contact region; and
forming a dielectric material overlying at least the first and second electrode members and the surface region of the bulk substrate structure,
wherein the crystalline piezo material comprises a single crystal piezo material; wherein the crystalline piezo material has a thickness of greater than 0.4 microns, the crystalline piezo material being characterized by a dislocation density of less than 10 12 defects/cm 2 .
2. The method of claim 1 wherein the bulk substrate structure is made of a material that is one of a gallium nitride (GaN), silicon carbide (SiC), silicon (Si), sapphire (Al 2 O 3 ), or aluminum nitride (AlN).
3. The method of claim 1 wherein the thickness of crystalline piezo material selected from at least one of AlN, AlGaN, InN, BN, or other group III nitrides.
4. The method of claim 1 wherein the each of the first electrode terminal and the second electrode terminal is selected from one of tantalum or molybdenum.
5. A method of fabricating a configurable monolithic filter ladder network comprising a plurality of crystalline acoustic resonator (SCAR) devices, numbered from R 1 to RN, where N is an integer greater than 1, configured on a common substrate member, the method comprising:
forming a bulk substrate structure, having a surface region, and a thickness of material, the bulk substrate structure having a first recessed region and a second recessed region, and a support member disposed between the first recessed region and the second recessed region;
forming a thickness of crystalline piezo material overlying the surface region, the thickness of crystalline piezo material having an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region;
forming a first electrode member overlying an upper portion of the thickness of crystalline piezo material;
forming a second electrode member overlying a lower portion of the thickness of crystalline piezo material to sandwich the thickness of crystalline piezo material with the first electrode member and the second electrode member, the second electrode member extending from the lower portion that includes the exposed backside region to the contact region;
forming a first electrode terminal electrically coupled with the first electrode member;
forming a second electrode terminal electrically coupled to the second electrode member at the contact region; and
forming a dielectric material overlying at least the first and second electrode members and the surface region of the bulk substrate structure,
wherein N is equal to at least 7; wherein R 1 and R 2 are configured to form a series shunt first two-element device; and R 6 and R 7 are configured to form a series shunt second two-element device.
6. The method of claim 5 wherein the bulk substrate structure is made of a material that is one of a gallium nitride (GaN), silicon carbide (SiC), silicon (Si), sapphire (Al 2 O 3 ), or aluminum nitride (AlN).
7. The method of claim 5 wherein the thickness of crystalline piezo material selected from at least one of AlN, AlGaN, InN, BN, or other group III nitrides.
8. The method of claim 5 wherein the each of the first electrode terminal and the second electrode terminal is selected from one of tantalum or molybdenum.
9. A method of fabricating a configurable monolithic filter ladder network comprising a plurality of crystalline acoustic resonator (SCAR) devices, numbered from R 1 to RN, where N is an integer greater than 1, configured on a common substrate member, the method comprising:
forming a bulk substrate structure, having a surface region, and a thickness of material, the bulk substrate structure having a first recessed region and a second recessed region, and a support member disposed between the first recessed region and the second recessed region;
forming a thickness of crystalline piezo material overlying the surface region, the thickness of crystalline piezo material having an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region;
forming a first electrode member overlying an upper portion of the thickness of crystalline piezo material;
forming a second electrode member overlying a lower portion of the thickness of crystalline piezo material to sandwich the thickness of crystalline piezo material with the first electrode member and the second electrode member, the second electrode member extending from the lower portion that includes the exposed backside region to the contact region;
forming a first electrode terminal electrically coupled with the first electrode member;
forming a second electrode terminal electrically coupled to the second electrode member at the contact region; and
forming a dielectric material overlying at least the first and second electrode members and the surface region of the bulk substrate structure,
wherein N is equal to at least 7; and wherein R 1 , R 2 and R 3 are configured to make up a first series-shunt-series Y element SCAR device; and R 4 , R 5 and R 6 are configured to make up a shunt-series-shunt three-element Pi SCAR device.
10. The method of claim 9 wherein the bulk substrate structure is made of a material that is one of a gallium nitride (GaN), silicon carbide (SiC), silicon (Si), sapphire (Al 2 O 3 ), or aluminum nitride (AlN).
11. The method of claim 9 wherein the thickness of crystalline piezo material selected from at least one of AlN, AlGaN, InN, BN, or other group III nitrides.
12. The method of claim 9 wherein the each of the first electrode terminal and the second electrode terminal is selected from one of tantalum or molybdenum.
13. A method of fabricating a configurable monolithic filter ladder network comprising a plurality of crystalline acoustic resonator (SCAR) devices, numbered from R 1 to RN, where N is an integer greater than 1, configured on a common substrate member, the method comprising:
forming a bulk substrate structure, having a surface region, and a thickness of material, the bulk substrate structure having a first recessed region and a second recessed region, and a support member disposed between the first recessed region and the second recessed region;
forming a thickness of crystalline piezo material overlying the surface region, the thickness of crystalline piezo material having an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region;
forming a first electrode member overlying an upper portion of the thickness of crystalline piezo material;
forming a second electrode member overlying a lower portion of the thickness of crystalline piezo material to sandwich the thickness of crystalline piezo material with the first electrode member and the second electrode member, the second electrode member extending from the lower portion that includes the exposed backside region to the contact region;
forming a first electrode terminal electrically coupled with the first electrode member;
forming a second electrode terminal electrically coupled to the second electrode member at the contact region; and
forming a dielectric material overlying at least the first and second electrode members and the surface region of the bulk substrate structure,
wherein the thickness of crystalline piezo material is a crystalline oxide selected from at least one of a high K dielectric, ZnO, or MgO; wherein the high K dielectric is characterized by the dislocation density of less than 10 12 defects/cm 2 and greater than 10 4 defects/cm 2 .
14. The method of claim 13 wherein the bulk substrate structure is made of a material that is one of a gallium nitride (GaN), silicon carbide (SiC), silicon (Si), sapphire (Al 2 O 3 ), or aluminum nitride (AlN).
15. The method of claim 13 wherein the thickness of crystalline piezo material selected from at least one of AlN, AlGaN, InN, BN, or other group III nitrides.
16. The method of claim 13 wherein the each of the first electrode terminal and the second electrode terminal is selected from one of tantalum or molybdenum.