IP Library Granted Patent US 11,735,723
Granted Patent B2
US 11,735,723 · App. 17/939,121 · Granted Aug 22, 2023

Ex-situ solid electrolyte interface modification using chalcogenides for lithium metal anode

Inventors: Girish Kumar Gopalakrishnan Nair (San Jose, CA); Subramanya P. Herle (Mountain View, CA); Karl J. Armstrong (Sunnyvale, CA)
Assignee: Applied Materials, Inc.
H01M4/366H01M4/0404H01M4/0423H01M4/134H01M4/382H01M4/62H01M4/661H01M4/667H01M2004/027
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Quick Facts
Patent No.
US 11,735,723
App. No.
17/939,121
Granted
Aug 22, 2023
Kind
B2
Abstract

Implementations described herein generally relate to metal electrodes, more specifically lithium-containing anodes, high performance electrochemical devices, such as secondary batteries, including the aforementioned lithium-containing electrodes, and methods for fabricating the same. In one implementation, an anode electrode structure is provided. The anode electrode structure comprises a current collector comprising copper. The anode electrode structure further comprises a lithium metal film formed on the current collector. The anode electrode structure further comprises a solid electrolyte interface (SEI) film stack formed on the lithium metal film. The SEI film stack comprises a chalcogenide film formed on the lithium metal film. In one implementation, the SEI film stack further comprises a lithium oxide film formed on the chalcogenide film. In one implementation, the SEI film stack further comprises a lithium carbonate film formed on the lithium oxide film.

Claims (32)

1. A method, comprising:

forming a lithium metal film over a current collector, the current collector comprising a copper film; and

forming a solid electrolyte interface (SEI) film stack on the lithium metal film, comprising:

forming a chalcogenide film on the lithium metal film, wherein the chalcogenide film is selected from a group of a bismuth chalcogenide film, a copper chalcogenide film, or a combination thereof; and

forming a lithium halide film on the chalcogenide film.

2. The method of claim 1 , wherein the lithium halide film is selected from lithium fluoride, lithium chloride, lithium bromide, and lithium iodide.

3. The method of claim 2 , wherein the chalcogenide film is the bismuth chalcogenide film.

4. The method of claim 2 , wherein the chalcogenide film is the copper chalcogenide film.

5. The method of claim 1 , wherein the lithium halide film is selected from lithium chloride and lithium bromide.

6. The method of claim 1 , further comprising an anode film formed between the current collector and the lithium metal film.

7. The method of claim 1 , wherein the lithium metal film contacts the copper film.

8. The method of claim 1 , wherein the chalcogenide film is selected from a group of CuS, Cu 2 Se, Cu 2 S, Cu 2 Te, CuTe, Bi 2 Te 3 , Bi 2 Se 3 , or a combination thereof.

9. A method, comprising:

forming a lithium metal film over a current collector, the current collector comprising a copper film; and

forming a solid electrolyte interface (SEI) film stack on the lithium metal film, comprising:

forming a composite film on the lithium metal film, wherein the composite film comprises a lithium halide material and a chalcogenide material, wherein the chalcogenide material is selected from a group of a bismuth chalcogenide, a copper chalcogenide, or a combination thereof.

10. The method of claim 9 , wherein the lithium halide material is selected from lithium fluoride, lithium chloride, lithium bromide, and lithium iodide.

11. The method of claim 10 , wherein the chalcogenide material is selected from a group of CuS, Cu 2 Se, Cu 2 S, Cu 2 Te, CuTe, Bi 2 Te 3 , Bi 2 Se 3 , or a combination thereof.

12. The method of claim 10 , wherein the chalcogenide material is the bismuth chalcogenide.

13. The method of claim 10 , wherein the chalcogenide material is the copper chalcogenide.

14. The method of claim 9 , further comprising an anode film formed between the current collector and the lithium metal film.

15. The method of claim 9 , wherein the lithium metal film contacts the copper film.

16. An electrode structure, comprising:

a current collector comprising a copper film;

a lithium metal film formed over the current collector; and

a solid electrolyte interface (SEI) film stack formed on the lithium metal film, comprising:

a chalcogenide film on the lithium metal film, wherein the chalcogenide film is selected from a group of a bismuth chalcogenide film, a copper chalcogenide film, or a combination thereof; and

a lithium halide film on the chalcogenide film.

17. The electrode structure of claim 16 , wherein the lithium halide film is selected from lithium fluoride, lithium chloride, lithium bromide, and lithium iodide.

18. The electrode structure of claim 16 , wherein the lithium halide film is selected from lithium chloride and lithium bromide.

19. The electrode structure of claim 16 , wherein the chalcogenide film is the bismuth chalcogenide film.

20. The electrode structure of claim 16 , further comprising an anode film formed between the current collector and the lithium metal film.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 24, 2025
From: APPLIED MATERIALS, INC.
To: ELEVATED MATERIALS US LLC
Reel/Frame 071036/0188 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 13, 2022
From: GOPALAKRISHNAN NAIR, GIRISH KUMAR; HERLE, SUBRAMANYA P.; ARMSTRONG, KARL
To: APPLIED MATERIALS, INC.
Reel/Frame 061079/0802 →
Continuity (4)
Continuation 17194899 · Mar 8, 2021
Continuation 16150111 · Oct 2, 2018
Provisional Application 62583911 · Nov 9, 2017
Related Publication 20230006197A1 · Jan 5, 2023