Mask layout, semiconductor device and manufacturing method using the same
A mask layout for forming a semiconductor device includes an active mask pattern, a gate electrode mask pattern, a silicide blocking mask pattern, and a contact mask pattern. The active mask pattern forms source and drain regions in a substrate. The gate electrode mask pattern, disposed to overlap the active mask pattern, forms a gate electrode between the source region and the drain region. The silicide blocking mask pattern is disposed to overlap the gate electrode mask pattern and the active mask pattern in the gate electrode, the source region, and the drain regions to form a silicide blocking region. The contact mask pattern, disposed spaced apart from the silicide blocking mask pattern, forms a contact plug on the substrate. The silicide blocking mask pattern covers the gate electrode mask pattern and extends to the active mask pattern.
1. A semiconductor device, comprising:
a well region of a first conductivity type disposed on an upper surface of a substrate;
an active region disposed on the well region of the first conductivity type;
a gate insulating film disposed on the active region;
a gate electrode disposed on the gate insulating film;
a source region and a drain region disposed in the well region of the first conductivity type;
an extended drain junction region disposed in the well region of the first conductivity type and surrounding the drain region; and
a silicide blocking film disposed on each of the extended drain junction region and the gate electrode,
wherein the silicide blocking film extends from one end of the gate electrode through the other end of the gate electrode to a portion of the drain region.
2. The semiconductor device of claim 1 , wherein the gate insulating film comprises:
a first gate insulating film disposed near the source region; and
a second gate insulating film disposed near the drain region, and
wherein the first gate insulating film and the second gate insulating film have different thicknesses.
3. The semiconductor device of claim 1 , wherein the silicide blocking film extends from the gate electrode to the source region.
4. The semiconductor device of claim 1 , further comprising:
a source silicide region disposed on the source region; and
a drain silicide region disposed on the drain region.
5. The semiconductor device of claim 4 , further comprising:
an isolation region disposed adjacent to the source region and the drain region,
wherein the drain silicide region is partially disposed on the drain region.
6. The semiconductor device of claim 1 , wherein the drain region is spaced apart from a side surface of the gate electrode.
7. The semiconductor device of claim 2 , wherein the extended drain junction region overlaps the second gate insulating film.
8. The semiconductor device of claim 1 further comprising:
a bulk region of the first conductivity type disposed in the well region of the first conductivity type.
9. The semiconductor device of claim 1 further comprising:
a deep well region of a second conductivity type disposed on the substrate; and
a deep well contact region of the second conductivity type disposed in the deep well region of the second conductivity type,
wherein the deep well region of the second conductivity type surrounds the well region of the first conductivity type.
10. The semiconductor device of claim 1 , wherein the source region and the drain region are of a second conductivity type.