Memory, programming method therefor and memory system

1. A programming method for a memory, wherein the memory comprises a plurality of memory cell strings, with each string connecting with a bit line at one end and with a source line at the other end and each string comprising a plurality of memory cells connected in series, wherein the plurality of memory cells are respectively coupled with a plurality of word lines, the programming method comprises:

programming a selected memory cell string according to a programming sequence;

applying, when programming a memory cell in the selected memory cell string that is coupled to a selected non-edge word line in the plurality of word lines, a first pass voltage to edge word lines in the plurality of word lines; and

applying a second pass voltage to a non-edge word line adjacent to the edge word lines, wherein:

the edge word lines are at least one word line in the plurality of word lines adjacent to the source line or at least one word line in the plurality of word lines adjacent to the bit line;

the non-edge word lines are word lines in the plurality of word lines other than the edge word lines;

the selected non-edge word line is not adjacent to the edge word lines; and

the first pass voltage is less than the second pass voltage.

2. The programming method of claim 1 , the programming method further comprises:

applying third pass voltages to remaining non-edge word lines, wherein the third pass voltages include a set of voltages greater than the first pass voltage.

3. The programming method of claim 2 , in case that the plurality of word lines are numbered as word line WL 0 , WL 1 , . . . , WLm, . . . , Wln, . . . successively from the source line or the bit line, the programming method further comprises, in case that the edge word lines comprise word line WL 0 and word line WL 1 and the selected non-edge word line is word line WLn:

the third pass voltages applied to the unselected non-edge word lines WL 2 to WLm being equal to the second pass voltage; and

the third pass voltages applied to the unselected non-edge word lines WLn−4 to WLm being greater than the second pass voltage, wherein n is not less than 17 and m is not greater than 15.

4. The programming method of claim 3 , the programming sequence comprises forward programming and backward programming, wherein:

the forward programming is to program memory cells in the selected memory cell string in turn from the memory cell adjacent to the source line to the memory cell adjacent to the bit line; and

the backward programming is to program memory cells in the selected memory cell string in turn from the memory cell adjacent to the bit line to the memory cell adjacent to the source line.

5. A memory, comprising:

a memory array comprising a plurality of memory cell strings, with each string being connected with a bit line at one end and a source line at the other end and each string comprising a plurality of memory cells connected in series, wherein the plurality of memory cells are respectively coupled with a plurality of word lines; and

a control circuit coupled to the memory array for controlling the memory array, wherein the control circuit is configured to:

program a selected memory cell string according to a programming sequence;

apply, when programming a memory cell in the selected memory cell string that is coupled to a selected non-edge word line in the plurality of word lines, a first pass voltage to edge word lines in the plurality of word lines; and

apply a second pass voltage to a non-edge word line adjacent to the edge word lines, wherein:

the edge word lines are at least one word line in the plurality of word lines adjacent to the source line or at least one word line in the plurality of word lines adjacent to the bit line;

the non-edge word lines are word lines in the plurality of word lines other than the edge word lines;

the selected non-edge word line is not adjacent to the edge word lines; and

the first pass voltage is less than the second pass voltage.

6. The memory of claim 5 , the control circuit is further configured to apply third pass voltages on remaining non-edge word lines, wherein the third pass voltages comprise a set of voltages greater than the first pass voltage.

7. The memory of claim 6 , in case that the plurality of word lines are numbered as word line WL 0 , WL 1 , . . . , WLm, . . . , Wln, . . . successively from the source line or the bit line, the control circuit is further configured such that, in case that the edge word lines comprise word line WL 0 and word line WL 1 and the selected non-edge word line is word line WLn:

the third pass voltages applied to the unselected non-edge word lines WL 2 to WLm are equal to the second pass voltage; and

the third pass voltages applied to the unselected non-edge word lines WLn−4 to WLm are greater than the second pass voltage, wherein n is not less than 17 and m is not greater than 15.

8. The memory of claim 7 , the memory cells coupled to the word line WL 0 are one of single level cell (SLC), multi-level cell (MLC), or tri-level cell (TLC); and

memory cells coupled to remaining word lines are quad-level cell (QLC).

9. The memory of claim 5 , the programming sequence comprises forward programming and backward programming, wherein:

the forward programming is to program memory cells in the selected memory cell string in turn from the memory cell adjacent to the source line to the memory cell adjacent to the bit line; and

the backward programming is to program memory cells in the selected memory cell string in turn from the memory cell adjacent to the bit line to the memory cell adjacent to the source line.

10. A memory system, comprising: a memory; and

a memory controller coupled to the memory and configured to control the memory, wherein:

the memory comprises a memory array, the memory array comprises a plurality of memory cell strings, each string connects with a bit line at one end and with a source line at the other end, and each string comprises a plurality of memory cells connected in series, wherein the plurality of memory cells are respectively coupled with a plurality of word lines; and

a control circuit coupled to the memory array for controlling the memory array, wherein the control circuit is configured to:

program a selected memory cell string according to a programming sequence;

apply, when programming a memory cell in the selected memory cell string that is coupled to a selected non-edge word line in the plurality of word lines, a first pass voltage to edge word lines in the plurality of word lines; and

apply a second pass voltage to a non-edge word line adjacent to the edge word lines, wherein:

the edge word lines are at least one word line in the plurality of word lines adjacent to the source line or at least one word line in the plurality of word lines adjacent to the bit line;

the non-edge word lines are word lines in the plurality of word lines other than the edge word lines;

the selected non-edge word line is not adjacent to the edge word lines; and

the first pass voltage is less than the second pass voltage.

11. The memory system of claim 10 , the control circuit is further configured to apply third pass voltages on remaining non-edge word lines, wherein the third pass voltages comprise a set of voltages greater than the first pass voltage.

12. The memory system of claim 11 , in case that the plurality of word lines are numbered as word line WL 0 , WL 1 , . . . , WLm, . . . , Wln, . . . successively from the source line or the bit line, the control circuit is further configured such that, in case that the edge word lines comprise word line WL 0 and word line WL 1 and the selected non-edge word line is word line WLn:

the third pass voltages applied to the unselected non-edge word lines WL 2 to WLm are equal to the second pass voltage; and

the third pass voltages applied to the unselected non-edge word lines WLn−4 to WLm are greater than the second pass voltage, wherein n is not less than 17 and m is not greater than 15.

13. The memory system of claim 12 , the memory cells coupled to the word line WL 0 are one of single level cell (SLC), multi-level cell (MLC), or tri-level cell (TLC); and

memory cells coupled to remaining word lines are quad-level cell (QLC).

14. The memory system of claim 10 , the programming sequence comprises forward programming and backward programming, wherein:

the forward programming is to program memory cells in the selected memory cell string in turn from the memory cell adjacent to the source line to the memory cell adjacent to the bit line; and the backward programming is to program memory cells in the selected memory cell string in turn from the memory cell adjacent to the bit line to the memory cell adjacent to the source line.