IP Library Patent Application 17951288
Patent Application
App. No. 17/951,288

SILICA-BASED SLURRY COMPOSITIONS CONTAINING HIGH MOLECULAR WEIGHT POLYMERS FOR USE IN CMP OF DIELECTRICS

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Patent No.
US None
App. No.
17/951,288
Abstract

The invention provides a chemical-mechanical polishing composition comprising: (a) about 3.0 wt. % to about 10 wt. % silica abrasive; (b) an anionic polymer having a weight average molecular weight of about 400 kDa to about 7000 kDa; and (c) water, wherein the polishing composition has a viscosity of at least about 1 cPs, a ratio of viscosity (cPs) to wt. % of silica abrasive of about 0.2 cPs/wt. % to about 1.5 cPs/wt. %, and a pH of about 9 to about 12. The invention additional provides a chemical-mechanical polishing composition comprising: (a) about 3.0 wt. % to about 10 wt. % silica abrasive; (b) a nonionicpolymer having a weight average molecular weight of about 300 kDa to about 7000 kDa; and (c) water, wherein the polishing composition has a viscosity of at least about 2 cPs, and a pH of about 9 to about 12. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silicon oxide, silicon nitride, polysilicon, or combinations thereof, using said compositions.

Claims (46)

1 . A chemical-mechanical polishing composition comprising:

(a) about 3.0 wt. % to about 10 wt. % silica abrasive;

(b) an anionic polymer having a weight average molecular weight of about 400 kDa to about 7,000 kDa; and

(c) water,

wherein the polishing composition has a viscosity of at least about 1 cPs, a ratio of viscosity (cPs) to wt. % of silica abrasive of about 0.2 cPs/wt. % to about 1.5 cPs/wt. %, and a pH of about 9 to about 12.

2 . The polishing composition of claim 1 , wherein the polishing composition comprises about 3.5 wt. % to about 8 wt. % silica abrasive.

3 . The polishing composition of claim 1 , wherein the polishing composition comprises about 3.5 wt. % to about 5 wt. % silica abrasive.

4 . The polishing composition of claim 1 , wherein the polishing composition has a pH of about 10 to about 12.

5 . The polishing composition of claim 1 , wherein the polishing composition has a viscosity of at least about 2 cPs.

6 . The polishing composition of claim 1 , wherein the polishing composition has a ratio of viscosity (cPs) to wt. % of silica abrasive of about 0.4 cPs/wt. % to about 1.5 cPs/wt. %.

7 . The polishing composition of claim 1 , wherein the polymer has a weight average molecular weight of about 1000 kDa to about 7000 kDa.

8 . The polishing composition of claim 1 , wherein the polymer has a weight average molecular weight of about 2000 kDa to about 4000 kDa.

9 . The polishing composition of claim 1 , wherein the polymer comprises an anionic polymer comprising an anionic monomer comprising a carboxylate group, a phosphonate group, a sulfonate group, or combinations thereof.

10 . The polishing composition of claim 1 , wherein the polymer comprises an anionic polymer comprising an anionic monomer selected from 2-acrylamido-2-methylpropane sulfonic acid, styrene sulfonate, 2-acrylamido-2-methylbutane sulfonic acid, [2-methyl-2-[(1-oxo-2-propenyl)amino]propyl]-phosphonic acid, maleic acid, methacrylic acid, acrylic acid, salts thereof, and combinations thereof.

11 . The polishing composition of claim 1 , wherein the polymer comprises an anionic polymer selected from carboxymethyl cellulose, a hydrophobically modified polyacrylate copolymer, poly-2-acrylamido-2-methylpropane sulfonic acid, polystyrenesulfonate, salts thereof, and combinations thereof.

12 . The polishing composition of claim 1 , wherein the polishing composition comprises about 100 ppm to about 2000 ppm of the polymer.

13 . The polishing composition of claim 1 , wherein the silica abrasive has an average transmission electron microscope (TEM) equivalent diameter of about 60 nm to about 150 nm.

14 . The polishing composition of claim 1 , wherein the silica abrasive has an average transmission electron microscope (TEM) equivalent diameter of about 80 nm to about 120 nm.

15 . The polishing composition of claim 1 , wherein the silica abrasive has an average aspect ratio of at least 1.1.

16 . The polishing composition of claim 1 , wherein the silica abrasive has an average aspect ratio of at least 1.25.

17 . The polishing composition of claim 1 , wherein the silica abrasive has an average Brunauer-Emmet-Teller (BET) surface area of about 20 cm 2 /g to about 60 cm 2 /g.

18 . The polishing composition of claim 1 , wherein the silica abrasive has an average Brunauer-Emmet-Teller (BET) surface area of about 30 cm 2 /g to about 45 cm 2 /g.

19 . A chemical-mechanical polishing composition comprising:

(a) about 3.0 wt. % to about 10 wt. % silica abrasive;

(b) a nonionic polymer having a weight average molecular weight of about 300 kDa to about 7,000 kDa; and

(c) water,

wherein the polishing composition has a viscosity of at least about 1.2 cPs, and a pH of about 9 to about 12.

20 . The polishing composition of claim 19 , wherein the nonionic polymer selected from polyalkylene oxides, polyetheramines, polyethylene oxide/polypropylene oxide copolymers, polyacrylamide, hydrophobically modified polyacrylamide, cellulose, hydrophobically modified cellulose, siloxane polyalkyleneoxide copolymers, hydrophobically modified polyacrylate polymers, polysaccharides, hydrophobically modified polysaccharides, polystyrene, and combinations thereof.

21 . A method of chemically-mechanically polishing a substrate comprising:

(i) providing a substrate,

(ii) providing a polishing pad,

(iii) providing a chemical-mechanical polishing composition comprising:

(a) about 3.0 wt. % to about 10 wt. % silica abrasive;

(b) an anionic polymer having a weight average molecular weight of about 400 kDa to about 7,000 kDa; and

(c) water,

wherein the polishing composition has a viscosity of at least about 1 cPs, a ratio of viscosity (cPs) to wt. % of silica abrasive of about 0.2 cPs/wt. % to about 1.5 cPs/wt. %, and a pH of about 9 to about 12,

(iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition, and

(v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the substrate to polish the substrate.

22 . A method of chemically-mechanically polishing a substrate comprising:

(i) providing a substrate,

(ii) providing a polishing pad,

(iii) providing a chemical-mechanical polishing composition comprising:

(a) about 3.0 wt. % to about 10 wt. % silica abrasive;

(b) a nonionic polymer having a weight average molecular weight of about 300 kDa to about 7,000 kDa; and

(c) water,

wherein the polishing composition has a viscosity of at least about 1.2 cPs, and a pH of about 9 to about 12.

Assignments (2)
CHANGE OF NAME Recorded Nov 8, 2023
From: CMC MATERIALS, INC.
To: CMC MATERIALS LLC
Reel/Frame 065517/0783 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 23, 2022
From: REISS, BRIAN; JOHNSON, BRITTANY; NAIK, SAJO; LU, LUNG-TAI; LONG, KIM; KNAPTON, ELLIOT; ROBELLO, DOUGLAS; BROSNAN, SARAH
To: CMC MATERIALS, INC.
Reel/Frame 061191/0722 →