Granted Patent B2

US 12,527,231 · App. 17/953,800 · Granted Jan 13, 2026

Inventors: Pouya Hashemi (Purchase, NY); Jonathan Zanhong Sun (Shrub Oak, NY)

Assignee: International Business Machines Corporation

H10N52/80H10B61/00H10N52/00H10N52/01

Abstract

Claims (19)

1 . A memory structure comprising:

a chiral spin-orbit-torque (SOT) metal bottom electrode composed of a bi- or multi-layered structure having a spiral pattern and a tilted materials interface;

a via dielectric material structure located laterally adjacent to the chiral SOT metal bottom electrode;

a magnetic tunnel junction (MTJ) structure located on top of the chiral SOT metal bottom electrode, wherein a magnetic free layer of the MTJ structure is located beneath a magnetic reference layer of the MTJ; and

a top electrode located on top of the MTJ structure.

2 . The memory structure of claim 1 , wherein the chiral SOT metal bottom electrode enables each of a charge current direction, a spin current direction and a spin polarization direction to be perpendicular to a horizontal surface of the chiral SOT metal bottom electrode.

3 . The memory structure of claim 1 , wherein the chiral SOT metal bottom electrode is a via structure.

4 . The memory structure of claim 1 , wherein each of the chiral SOT metal bottom electrode, the MTJ structure and the top electrode is cylindrical.

5 . The memory structure of claim 1 , wherein the magnetic free layer of the MTJ structure has a width that differs from a width of the chiral SOT metal bottom electrode.

6 . The memory structure of claim 1 , wherein the magnetic free layer of the MTJ structure has a width that is substantially equal to a width of the chiral SOT metal bottom electrode.

7 . The memory structure of claim 1 , further comprising an interconnect level comprising an interconnect dielectric material layer and an electrically conductive structure located beneath the chiral SOT metal bottom electrode, wherein the chiral SOT metal bottom electrode is located on a surface of the electrically conductive structure.

8 . The memory structure of claim 7 , wherein the interconnect dielectric material layer has a notched surface located adjacent to the electrically conductive structure, and wherein the via dielectric material structure is located on the notched surface of the interconnect dielectric material layer.

9 . The memory structure of claim 1 , wherein the chiral SOT metal bottom electrode is composed of a conductor that generates spin-current to assist switching of the MTJ.

10 . The memory structure of claim 9 , wherein the bi- or multi-layered structure is in a form of A/B or A/I/B, where A=β-Ta, β-W, Cu x Pt 1-x , Cu 1-x Ta x , Pd x Pt 1-x , Au x Pt 1-x , Pt, Bi 2 Se 3 , WTe 2 , PtTe 2 , or TaS 2 , Pt x Rh 1-x , x is from 0 to 1, and B=Cu, Ag, or Au, and I comprises NiO, FeOx, or other spin-conducting but charge-insulating ferro-ferri- or antiferro-magnetic materials.

11 . The memory structure of claim 1 , further comprising a passivation layer located on a sidewall of each of the top electrode, the MTJ structure, and the chiral SOT metal bottom electrode.

12 . The memory structure of claim 11 , further comprising a dielectric fill material located on the passivation layer, wherein the dielectric fill material has a topmost surface that is coplanar with a topmost surface of the top electrode.

13 . The memory structure of claim 1 , further comprising an interconnect dielectric material layer located above the top electrode, wherein an electrically conductive structure is embedded in the interconnect dielectric material layer, and the electrically conductive structure contacts a surface of the top electrode.

14 . The memory structure of claim 13 , wherein the electrically conductive structure has a width that differs from a width of the top electrode.

15 . The memory structure of claim 13 , wherein the electrically conductive structure has a width that equals a width of the top electrode.

Assignments (1)

Continuity (1)

References Cited (24)