Asymmetric injection for better wafer uniformity
A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions are misaligned with a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.
1. A method for processing a substrate, comprising:
injecting a gas flow in a first direction from a gas source into a gas injector when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, the substrate support having a first edge and a second edge opposite the first edge in a direction orthogonal to the first direction, the processing chamber having a chamber gas inlet and a chamber gas outlet, the substrate support disposed between the chamber gas inlet and the chamber gas outlet in the first direction; and
injecting the gas flow from the gas injector into the processing chamber, wherein:
the gas flow from the gas injector is directed in a second direction and a third direction; and
the second and third directions are misaligned with a center of a substrate disposed on the substrate support and are at an angle to the first direction towards the second edge of the substrate support.
2. The method of claim 1 , further comprising:
rotating the substrate support around the center of the substrate.
3. The method of claim 1 , wherein:
the second direction is tilted from the first direction by between 5° to 45° towards the second edge of the substrate support; and
the third direction is substantially tangential to the second edge of the substrate support.
4. The method of claim 1 , further comprising:
exhausting the gas flow from the chamber gas outlet by a first main exhaust pump disposed on a first side of the processing chamber and a second main exhaust pump disposed on a second side of the processing chamber, the second side being opposite the first side in a fourth direction that is orthogonal to the first direction.
5. The method of claim 1 , further comprising:
exhausting the gas flow from the chamber gas outlet by a first main exhaust pump disposed on a first side of the processing chamber and from the processing volume by a side exhaust pump disposed on the first side of the processing chamber near the first edge of the substrate support.
6. A method for processing a substrate, comprising:
injecting a gas flow in a first direction from a gas source into a gas injector when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, the substrate support having a first edge and a second edge opposite the first edge in a direction orthogonal to the first direction, the processing chamber having a chamber gas inlet and a chamber gas outlet, the substrate support disposed between the chamber gas inlet and the chamber gas outlet in the first direction; and
injecting the gas flow from the gas injector into the processing chamber, wherein:
the gas flow from the gas injector is directed in a second direction and a third direction;
the second and third directions are misaligned with a center of a substrate disposed on the substrate support and are at an angle to the first direction towards the second edge of the substrate support;
the first, second, and third directions are parallel to a first plane;
the second and third directions are misaligned with a center of the substrate, and are at an angle to the first direction towards the second edge of the substrate support; and
the second and third directions are not the same.
7. The method of claim 6 , further comprising:
rotating the substrate support around the center of the substrate.
8. The method of claim 6 , wherein:
the second direction is tilted from the first direction by between 5° to 45° towards the second edge of the substrate support; and
the third direction is substantially tangential to the second edge of the substrate support.
9. The method of claim 6 , further comprising:
exhausting the gas flow from the chamber gas outlet by a first main exhaust pump disposed on a first side of the processing chamber and a second main exhaust pump disposed on a second side of the processing chamber, the second side being opposite the first side in a fourth direction that is orthogonal to the first direction.
10. The method of claim 6 , further comprising:
exhausting the gas flow from the chamber gas outlet by a first main exhaust pump disposed on a first side of the processing chamber and from the processing volume by a side exhaust pump disposed on the first side of the processing chamber near the first edge of the substrate support.