IP Library Granted Patent US 12,218,497
Granted Patent B1
US 12,218,497 · App. 17/964,772 · Granted Feb 4, 2025

Optically switched circuit breaker with cascaded transistor topology

Inventors: Gregory Pickrell (Rio Rancho, NM); Jason Christopher Neely (Albuquerque, NM); Lee Gill (Albuquerque, NM); Jacob Mueller (Albuquerque, NM); Luciano Andres Garcia Rodriguez (Albuquerque, NM); Jack David Flicker (Albuquerque, NM); Emily Ann Schrock (Albuquerque, NM); Robert Kaplar (Albuquerque, NM); Harold P. Hjalmarson (Albuquerque, NM); Jane Lehr (Placitas, NM)
Assignees: National Technology & Engineering Solutions of Sandia, LLC; UNM Rainforest Innovations
H02H9/02H02H1/0007
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,218,497
App. No.
17/964,772
Granted
Feb 4, 2025
Kind
B1
Abstract

A disclosed switching apparatus, such as a circuit breaker, includes a transistor switch circuit connected between a power input terminal and a load terminal, and, connected to the power input terminal and bypassing the transistor switch circuit, a switchable bypass leg that is optically switched by a series-connected photoconductive semiconductor switch (PCSS). The transistor switch circuit includes at least one cascade of three or more series-connected transistors, and at least one resistor network configured to divide a voltage from a voltage source across a cascade of series-connected transistors. Operating the switch apparatus includes detecting whether a sensed electric current is in a fault condition, opening the transistor switch circuit upon detecting a fault condition, and then closing the PCSS so that the electric current is diverted onto a switchable bypass path. The opening of the transistor switch circuit comprises turning OFF a normally-ON transistor switch circuit.

Claims (66)

1. A switching apparatus having a power input terminal for electric power and a load terminal for connection to a load, comprising:

a transistor switch circuit connected between the power input terminal and the load terminal; and

a switchable bypass leg connected to the power input terminal and bypassing the transistor switch circuit, the switchable bypass leg including a series-connected photoconductive semiconductor switch (PCSS);

wherein the switchable bypass leg is configured to be optically switchable by the PCSS;

wherein the transistor switch circuit comprises:

at least a first plurality of n series-connected transistors, each of said transistors having a respective source terminal, a respective drain terminal, and a respective gate terminal, wherein for n a positive integer at least 3, the first plurality of n series-connected transistors includes a first transistor herein denominated J 1 , a last transistor herein denominated J n , and at least one transistor herein denominated J i , i having respective positive integer values between 1 and n;

a terminal S connected to the J 1 source terminal;

a terminal D connected to the J n drain terminal;

a control terminal G connected to the J 1 gate terminal; and

a dedicated voltage-balancing network connected between terminal S and terminal D; and

wherein the dedicated voltage-balancing network includes a number, at least two, of parallel-connected resistive legs, each parallel-connected resistive leg includes two or more series-connected resistors, and for each transistor after J 1 , the gate terminal connects to one of the parallel-connected resistive legs such that the parallel-connected resistive legs collectively constitute a voltage divider for dividing voltage across the n series-connected transistors.

2. The switching apparatus of claim 1 , the transistor switch circuit further comprising at least one partial transistor stack, wherein:

each said partial transistor stack comprises a number p of series-connected transistors that is at least 1 but less than n; and

each said partial transistor stack is connected in parallel across the transistors J 1 to J p of a respective plurality of n series-connected transistors.

3. The switching apparatus of claim 1 , wherein the switchable bypass leg includes a capacitor series-connected with the PCSS.

4. The switching apparatus of claim 1 , wherein the switching apparatus further comprises:

a load current sensor configured to measure a load current exiting the load terminal; and

a controller, the controller being connected to the load current sensor and configured to receive, from the load current sensor, a signal S(I L ) indicative of a load current, the controller configured to infer the presence of a hard fault condition from the signal S(I L ) and to declare an instant-trip state in response thereto, and the controller being configured to, when in the instant-trip state, first open the transistor switch circuit and then close the switchable bypass leg to enable conduction of a bypass current in the switchable bypass leg when the hard fault condition is inferred.

5. The switching apparatus of claim 4 , wherein:

the apparatus is further configured to enter a no-trip state, a delayed-trip state, or an instant-trip state, depending on the signal S(I L );

when the hard fault condition is inferred, the controller is configured to cause the apparatus to enter the instant-trip state; and

the controller is further configured such that:

opening of the transistor switch circuit is not permitted in the no-trip state;

opening of the transistor switch circuit is permitted in the delayed-trip state only when the load current is within a predetermined range of currents; and

opening of the transistor switch circuit occurs in the instant-trip state when the hard fault condition is inferred.

6. The switching apparatus of claim 5 , wherein the controller is configured such that opening of the transistor switch circuit in the delayed-trip state occurs after a time interval in which a cumulative amount of electrothermal energy determined from the signal S(I L ) reaches a predetermined energy threshold.

7. The switching apparatus of claim 4 further comprising an optical source, wherein:

the controller is configured to close the switchable bypass leg by sending a trigger signal to turn ON the optical source, the optical source configured to switch closed the PCSS; and

the controller is further configured to send the trigger signal at a specified time after the opening of the transistor switch circuit.

8. The switching apparatus of claim 4 , wherein:

the controller is configured to close the switchable bypass leg by sending a trigger signal to turn ON an optical source for switching closed the PCSS; and

the controller is further configured to send the trigger signal at a specified time after the opening of the transistor switch circuit.

9. The switching apparatus of claim 8 , wherein:

the PCSS has a voltage threshold for a high-gain mode; and

the specified time is a time when a voltage across the PCSS is above the voltage threshold for the high-gain mode.

10. The switching apparatus of claim 1 , wherein the switchable bypass leg further includes a capacitor series-connected to the PCSS and to the load terminal.

11. The switching apparatus of claim 1 , wherein the switchable bypass leg further includes a capacitor series-connected to the PCSS and to ground, the switchable bypass leg thereby bypassing the load terminal.

12. The switching apparatus of claim 1 , wherein the at least a first plurality of n series-connected transistors is at least a first plurality of n series-connected JFETs.

13. A method, comprising, in a power circuit:

sensing an electric current I on an input path directed to a load terminal for connecting to a load;

detecting whether the sensed electric current I is in a fault condition;

opening a transistor switch circuit in response to a detection of a fault condition, resulting in breaking of the input path directed to the load terminal; and

then closing a photoconductive semiconductor switch (PCSS), resulting in diverting the electric current onto a switchable bypass path that bypasses the transistor switch circuit;

wherein:

the opening of the transistor switch circuit comprises turning OFF a normally-ON transistor switch circuit;

the transistor switch circuit comprises at least one cascaded series of three or more transistors, including a bottom transistor at a bottom end of the series and a top transistor at a top end of the series;

in each said cascaded series, a terminal S is connected to a source terminal of the bottom transistor, and a terminal D is connected to a drain terminal of the top transistor; and

for each said cascaded series, a dedicated voltage-balancing network comprising at least two parallel-connected resistive legs is connected between terminal S and terminal D as a voltage divider for dividing voltage across the cascaded series, each parallel-connected resistive leg comprising two or more series-connected resistors.

14. The method of claim 13 , wherein:

the method further comprises declaring, in response to the sensing of the electric current I, one of a no-trip state, a delayed-trip state, or an instant-trip state;

the opening of the transistor switch circuit is not permitted from the no-trip state;

from the delayed-trip state, the opening of the transistor switch circuit is permitted only when the sensed electric current I is within a predetermined range of currents; and

the opening of the transistor switch circuit occurs upon declaring the instant-trip state.

15. The method of claim 14 , wherein:

the method further comprises, when in the delayed-trip state, computing a cumulative amount of electrothermal energy in response to the sensing of the electric current I;

the method further comprises, when in the delayed-trip state, determining if the cumulative amount of electrothermal energy has reached a delayed-trip trigger threshold; and

the opening of the transistor switch circuit from the delayed-trip state occurs upon determination that the cumulative amount of electrothermal energy has reached the delayed-trip trigger threshold.

16. The method of claim 15 , wherein the said states of the controller are responsive to a comparison of the sensed electric current I to a first current threshold Θ 1 and to a second current threshold Θ 2 greater than Θ 1 , such that for I<Θ 1 , the no-trip state is a stable state of the controller, for i<I<Θ 2 , the delayed-trip state is a stable state of the controller until the delayed-trip trigger threshold is reached, and for I at least Θ 2 , the instant-trip state is declared.

17. The method of claim 13 , wherein:

the closing of the PCSS comprises sending a trigger signal to turn ON an optical source for switching closed the PCSS; and

the trigger signal is sent at a predetermined time after the opening of the transistor switch circuit.

18. The method of claim 17 , wherein:

the PCSS has a voltage threshold for a lock-on mode of operation; and

the predetermined time for sending the trigger signal is a time when a voltage across the PCSS is above the voltage threshold for the lock-on mode.

19. The method of claim 13 , wherein the switchable bypass path passes through a capacitor to the load terminal.

20. The method of claim 13 , wherein the switchable bypass path passes through a capacitor to ground and bypasses the load terminal.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 31, 2023
From: LEHR, JANE
To: THE REGENTS OF THE UNIVERSITY OF NEW MEXICO
Reel/Frame 065400/0871 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 31, 2023
From: THE REGENTS OF THE UNIVERSITY OF NEW MEXICO
To: UNM RAINFOREST INNOVATIONS
Reel/Frame 065401/0266 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 24, 2023
From: PICKRELL, GREGORY; NEELY, JASON CHRISTOPHER; GILL, LEE; MUELLER, JACOB; GARCIA RODRIGUEZ, LUCIANO ANDRES; FLICKER, JACK DAVID; SCHROCK, EMILY ANN; KAPLAR, ROBERT
To: NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC
Reel/Frame 062472/0072 →
CONFIRMATORY LICENSE Recorded Jan 9, 2023
From: NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC
To: U.S. DEPARTMENT OF ENERGY
Reel/Frame 062314/0517 →
Continuity (1)
Continuation In Part 17737593 · May 5, 2022
References Cited (59)
US 5804815A · Loubriel et al. · 1998 [cited by applicant]
US 8912840B2 · Aggeler · 2014 [cited by examiner]
US 20110291738A1 · Biela · 2011 [cited by examiner]
US 20200382118A1 · Voss et al. · 2020 [cited by applicant]
US 20220231684A1 · Mehrotra · 2022 [cited by examiner]
Garcia Rodriguez, L. Gill, J. Mueller and J. Neely, “A High-Voltage Cascaded Solid-State DC Circuit Breaker Using Normally-ON SiC JFETs,” 2021 IEEE 12th Energy Conversion Congress & Exposition—Asia (ECCE-Asia), 2021, pp… [cited by applicant]
L. Gill, L. A. G. Rodriguez, J. Mueller and J. Neely, “A Comparative Study of SiC JFET Super-Cascode Topologies,” 2021 IEEE Energy Conversion Congress and Exposition (ECCE), 2021, pp. 1741-1748, doi: 10.1109/ECCE47101.2… [cited by applicant]
P. Friedrichs, H. Mitlehner, R. Schorner, K.-. Dohnke, R. Elpelt and D. Stephani, “Stacked high voltage switch based on SiC VJFETs”, ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and I… [cited by applicant]
J. Biela, D. Aggeler, D. Bortis and J. W. Kolar, “Balancing Circuit for a 5-kV/50-ns Pulsed-Power Switch Based on SiC-JFET Super Cascode”, IEEE Transactions on Plasma Science, vol. 40, No. 10, pp. 2554-2560, Oct. 2012. [cited by applicant]
J. Biela, D. Aggeler, D. Bortis and J. W. Kolar, “5kV/200ns Pulsed Power Switch based on a SiC-JFET Super Cascode”, 2008 IEEE International Power Modulators and High-Voltage Conference, pp. 358-361, 2008. [cited by applicant]
D. Aggeler, F. Canales, J. Biela and J. W. Kolar, “Dv/ Dt-Control Methods for the SiC JFET/Si MOSFET Cascode”, IEEE Transactions on Power Electronics, vol. 28, No. 8, pp. 4074-4082, Aug. 2013. [cited by applicant]
D. Aggeler, J. Biela and J. W. Kolar, “A compact high voltage 25 kW 50 kHz DC-DC converter based on SiC JFETs”, 2008 Twenty-Third Annual IEEE Applied Power Electronics Conference and Exposition, pp. 801-807, 2008. [cited by applicant]
D. Aggeler, J. Biela and J. W. Kolar, “Controllable dv/dt behaviour of the SiC MOSFET/JFET cascode an alternative hard commutated switch for telecom applications”, 2010 Twenty-Fifth Annual IEEE Applied Power Electronics… [cited by applicant]
Gao, A. J. Morgan, Y. Xu, X. Zhao and D. C. Hopkins, “6.0KV 100A 175kHz super cascode power module for medium voltage high power applications”, 2018 IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 1… [cited by applicant]
Gao, A. Morgan, Y. Xu, X. Zhao, B. Ballard and D. C. Hopkins, “6.5kV SiC JFET-based Super Cascode Power Module with High Avalanche Energy Handling Capability”, 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Ap… [cited by applicant]
X. Ni, R. Gao, X. Song, A. Q. Huang and W. Yu, “Development of 6kV SiC hybrid power switch based on 1200V SiC JFET and MOSFET”, 2015 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 4113-4118, 2015. [cited by applicant]
X. Song, A. Q. Huang, S. Sen, L. Zhang, P. Liu and X. Ni, “15-kV/40-A FREEDM Supercascode: A Cost-Effective SiC High-Voltage and High-Frequency Power Switch”, IEEE Transactions on Industry Applications, vol. 53, No. 6, … [cited by applicant]
L. Garcia Rodriguez, L. Gill, J. Mueller and J. Neely, “A High-Voltage Cascaded Solid-State DC Circuit Breaker Using Normally-On SiC JFETs”, 2021 12th Energy Conversion Congress and Exposition Asia (ECCE Asia), 2021. [cited by applicant]
L. Zhang, S. Sen and A. Q. Huang, “7.2-kV/60-A Austin SuperMOS: An Intelligent Medium-Voltage SiC Power Switch”, IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 8, No. 1, pp. 6-15, Mar. 2020. [cited by applicant]
L. Zhang, S. Sen, Z. Guo, X. Zhao, A. Q. Huang and X. Song, “7.2-kV/60-A Austin SuperMOS: An Enabling SiC Switch Technology for Medium Voltage Applications”, 2019 IEEE Electric Ship Technologies Symposium (ESTS), pp. 52… [cited by applicant]
X. Lyu, H. Li, Z. Ma, B. Hu and J. Wang, “Dynamic Voltage Balancing for the High-Voltage SiC Super-Cascode Power Switch,” in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 7, No. 3, pp. 1566-157… [cited by applicant]
X. Lyu, H. Li, Z. Ma, B. Hu and J. Wang, “Optimization Method to Eliminate Turn-on Overvoltage Issue of the High Voltage SiC Super-Cascode Power Switch”, 2018 IEEE 4th Southern Power Electronics Conference (SPEC), pp. 1… [cited by applicant]
B. Hu et al., “Characterization and evaluation of 4.5 kV 40 A SiC super-cascode device”, 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), pp. 321-326, 2017. [cited by applicant]
X. Lyu, H. Li, B. Hu, Z. Ma and J. Wang, “High voltage SiC super-cascode power switch parameter optimization for loss reduction”, 2018 IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 1701-1705, 2018. [cited by applicant]
Bhalla, X. Li, P. Losee and M. Nava, “Ultra-High Voltage (40kV) Switches Implemented using SiC Super Cascodes”, PCIM Europe 2019; International Exhibition and Conference for Power Electronics Intelligent Motion Renewabl… [cited by applicant]
X. Li, H. Zhang, P. Alexandrov and A. Bhalla, “Medium voltage power switch based on SiC JFETs”, 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 2973-2980, 2016. [cited by applicant]
P. Killeen, A. N. Ghule and D. C. Ludois, “Silicon Carbide JFET Super-Cascodes for Normally-On Current Source Inverter Switches in Medium Voltage Variable Speed Electrostatic Drives”, 2019 IEEE Energy Conversion Congres… [cited by applicant]
J. L. Hostetler, P. Alexandrov, X. Li, L. Fursin and A. Bhalla, “6.5 kV SiC normally-off JFETs—Technology status”, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications, pp. 143-146, 2014. [cited by applicant]
M. Roshandeh, Z. Miao, Z. A. Danyial, Y. Feng and Z. J. Shen, “Cascaded operation of SiC JFETs in medium voltage solid state circuit breakers”, 2016 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 1-6, 2016. [cited by applicant]
R. Rodrigues, Y. Du, A. Antoniazzi and P. Cairoli, “A Review of Solid-State Circuit Breakers”, IEEE Transactions on Power Electronics, vol. 36, No. 1, pp. 364-377, Jan. 2021. [cited by applicant]
X. Zhang, Z. Yu, Z. Chen, Y. Huang, B. Zhao and R. Zeng, “Modular Design Methodology of DC Breaker Based on Discrete Metal Oxide Varistors With Series Power Electronic Devices for HVdc Application”, IEEE Transactions on… [cited by applicant]
Z. J. Shen, G. Sabui, Z. Miao and Z. Shuai, “Wide-Bandgap Solid-State Circuit Breakers for DC Power Systems: Device and Circuit Considerations”, IEEE Transactions on Electron Devices, vol. 62, No. 2, pp. 294-300, Feb. 2… [cited by applicant]
He, Z. Shuai, Z. Lei, W. Wang, X. Yang and Z. J. Shen, “A SiC JFET-Based Solid State Circuit Breaker With Digitally Controlled Current-Time Profiles”, IEEE Journal of Emerging and Selected Topics in Power Electronics, v… [cited by applicant]
Z. Miao, G. Sabui, A. Moradkhani Roshandeh and Z. J. Shen, “Design and Analysis of DC Solid-State Circuit Breakers Using SiC JFETs”, IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 4, No. 3, pp. … [cited by applicant]
Zhang, X. Yang, W. Chen and L. Wang, “Voltage Balancing Control of Series-Connected SiC MOSFETs by Using Energy Recovery Snubber Circuits”, IEEE Transactions on Power Electronics, vol. 35, No. 10, pp. 10200-10212, Oct. … [cited by applicant]
Y. Ren et al., “Stability Analysis and Improvement for SSCB With Single-Gate Controlled Series-Connected SiC MOSFETs”, IEEE Transactions on Industrial Electronics, vol. 68, No. 9, pp. 8093-8103, Sep. 2021. [cited by applicant]
L. Mackey, C. Peng and I. Husain, “A Progressive Switching Scheme for Solid-State DC Circuit Breakers”, 2018 9th IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG), pp. 1-6, 2018. [cited by applicant]
C. Abbate, G. Busatto and F. Iannuzzo, “High-Voltage High-Performance Switch Using Series-Connected IGBTs”, IEEE Transactions on Power Electronics, vol. 25, No. 9, pp. 2450-2459, Sep. 2010. [cited by applicant]
R. Withanage and N. Shammas, “Series Connection of Insulated Gate Bipolar Transistors (IGBTs)”, IEEE Transactions on Power Electronics, vol. 27, No. 4, pp. 2204-2212, Apr. 2012. [cited by applicant]
T. C. Lim, B. W. Williams, S. J. Finney and P. R. Palmer, “Series-Connected IGBTs Using Active Voltage Control Technique”, IEEE Transactions on Power Electronics, vol. 28, No. 8, pp. 4083-4103, Aug. 2013. [cited by applicant]
J. Liu, L. Ravi, D. Dong and R. Burgos, “A Single Passive Gate-Driver for Series-Connected Power Devices in DC Circuit Breaker Applications”, IEEE Transactions on Power Electronics, vol. 36, No. 10, pp. 11031-11035, Oct… [cited by applicant]
X. Wu, S. Cheng, Q. Xiao and K. Sheng, “A 3600 V/80 A Series—Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver”, IEEE Transactions on Power Electronics, vol. 29, No. 5, pp. 2296-2306, … [cited by applicant]
Y. Ren et al., “A Compact Gate Control and Voltage-Balancing Circuit for Series-Connected SiC MOSFETs and Its Application in a DC Breaker”, IEEE Transactions on Industrial Electronics, vol. 64, No. 10, pp. 8299-8309, Oc… [cited by applicant]
Y. Ren, X. Yang, F. Zhang, F. Wang, L. M. Tolbert and Y. Pei, “A Single Gate Driver Based Solid-State Circuit Breaker Using Series Connected SiC MOSFETs”, IEEE Transactions on Power Electronics, vol. 34, No. 3, pp. 2002… [cited by applicant]
C. Li, S. Chen, H. Luo, C. Li, W. Li and X. He, “A Modified RC Snubber With Coupled Inductor for Active Voltage Balancing of Series-Connected SiC MOSFETs”, IEEE Transactions on Power Electronics, vol. 36, No. 10, pp. 11… [cited by applicant]
V. Jones, R. A. Fantino and J. C. Balda, “A Modular Switching Position With Voltage-Balancing and Self-Powering for Series Device Connection”, IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 9, N… [cited by applicant]
L. Pang, T. Long, K. He, Y. Huang and Q. Zhang, “A Compact Series-Connected SiC MOSFETs Module and Its Application in High Voltage Nanosecond Pulse Generator”, IEEE Transactions on Industrial Electronics, vol. 66, No. 1… [cited by applicant]
Marzoughi, R. Burgos and D. Boroyevich, “Active Gate-Driver With dv/dt Controller for Dynamic Voltage Balancing in Series-Connected SiC MOSFETs”, IEEE Transactions on Industrial Electronics, vol. 66, No. 4, pp. 2488-249… [cited by applicant]
X. Yao, “Study on DC arc faults in ring-bus DC microgrids with constant power loads”, 2016 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 1-5, 2016. [cited by applicant]
M. E. Baran and N. R. Mahajan, “DC distribution for industrial systems: opportunities and challenges”, IEEE Transactions on Industry Applications, vol. 39, No. 6, pp. 1596-1601, Nov.-Dec. 2003. [cited by applicant]
Z. J. Shen, A. M. Roshandeh, Z. Miao and G. Sabui, “Ultrafast autonomous solid state circuit breakers for shipboard DC power distribution”, 2015 IEEE Electric Ship Technologies Symposium (ESTS), pp. 299-305, 2015. [cited by applicant]
X. Pei, O. Cwikowski, D. S. Vilchis-Rodriguez, M. Barnes, A. C. Smith and R. Shuttleworth, “A review of technologies for MVDC circuit breakers”, IECON 2016—42nd Annual Conference of the IEEE Industrial Electronics Socie… [cited by applicant]
Shukla and G. D. Demetriades, “A Survey on Hybrid Circuit-Breaker Topologies”, IEEE Transactions on Power Delivery, vol. 30, No. 2, pp. 627-641, Apr. 2015. [cited by applicant]
R. Wang, B. Zhang, S. Zhao, L. Liang and Y. Chen, “Design of an IGBT-series-based Solid-State Circuit Breaker for Battery Energy Storage System Terminal in Solid-State Transformer”, IECON 2019—45th Annual Conference of … [cited by applicant]
O. A. Ciniglio, D. P. Carroll and H. Mehta, “The application of photoconductive switches in HVDC circuit interruption,” in IEEE Transactions on Power Delivery, vol. 5, No. 1, pp. 460-466, Jan. 1990, doi: 10.1109/61.1073… [cited by applicant]
Andrew D. Koehler et al., “High Voltage GaN Lateral Photoconductive Semiconductor Switches,” ECS Journal of Solid State Science and Technology, 6 (11) S3099-S3102 (2017), 5 pages. [cited by applicant]
G.W. Pickrell et al., “Advanced GaN Device Technologies for Power Electronics,” SAND2018-10913C, Sandia National Laboratories (2018), 27 pages. [cited by applicant]
G.M. Loubriel et al., “Photoconductive Semiconductor Switches: Laser Q-switch Trigger and Switch-Trigger Laser Integration,” SAND97-3111, Sandia National Laboratories (1997), 28 pages. [cited by applicant]
G. Pickrell et al., “ARC-Safe: Accelerated Response Semiconducting Contactors and Surge Attenuation For DC Electrical Systems,” SAND2020-8298PE, Sandia National Laboratories (2020), 20 pages. [cited by applicant]
Cited By (2)
US 12,340,994 US 12,706,606