Method and system for depositing boron nitride using pulsed chemical vapor deposition
Methods and systems for depositing a boron nitride film on a substrate are disclosed. More particularly, the disclosure relates to methods and systems that can be used for depositing a boron nitride film by a pulsed CVD process.
1 . A cyclic deposition method of depositing a boron nitride film on a surface of a substrate,
the method comprising:
providing the substrate in a reaction chamber, the reaction chamber comprising a gas distribution assembly, a susceptor, and a reaction space;
providing a reactant into the reaction space;
forming a plasma within the reaction space between the gas distribution assembly and the susceptor using the reactant; and
pulsing a precursor into the reaction space to thereby form the boron nitride film,
wherein the precursor comprises boron and nitrogen;
wherein the reactant is provided continuously during the pulsing of the precursor into the reaction chamber;
wherein the reactant consists of 30-99% argon and/or helium and 1-70% hydrogen; and
wherein the plasma is continuous during a plurality of steps of pulsing the precursor.
2 . The method of claim 1 , wherein the precursor consists of boron, nitrogen, and hydrogen.
3 . The method of claim 1 , wherein the precursor is represented by a chemical formula:
wherein at least one of R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 is F or Cl.
4 . The method of claim 1 , wherein the precursor consists of borazine.
5 . The method of claim 1 , wherein the reactant consists of argon and helium and hydrogen.
6 . The method of claim 5 , wherein the reactant consists of argon and hydrogen.
7 . The method of claim 1 , wherein the reactant consists of 30-99% argon or helium and hydrogen.
8 . The method of claim 1 , wherein each pulse of precursor is provided for between 0.01 and 1 seconds and amount of time between pulses is between 0.1 and 10 seconds.
9 . The method of claim 1 , wherein the susceptor comprises an electrode coupled that is to ground.
10 . The method of claim 1 , wherein the method comprises a cyclical CVD process.
11 . The method of claim 1 , wherein a pressure within the reaction chamber is between about 150 Pa and about 300 Pa.
12 . The method of claim 1 , wherein the temperature within the reaction chamber is between about 300 and about 500° C.
13 . The method of claim 1 , wherein the plasma is provided using an RF power of between about 75 W and about 300 W for a 300 mm substrate.
14 . The method of claim 1 , wherein the boron nitride film is deposited at a rate of greater than 0.03 nm/min.
15 . The method of claim 1 , wherein the boron nitride film is deposited at a rate of greater than 0.05 nm/min.
16 . The method of claim 6 , wherein the reactant comprises a carrier gas.