Nanorod LED, display apparatus including the same, and method of manufacturing the nanorod LED
Provided are nanorod light emitting diodes (LEDs), display apparatuses, and manufacturing methods thereof. The nanorod LED includes a first-type semiconductor layer including a body and a pyramidal structure continuously provided from the body, a nitride light emitting layer provided on the pyramidal structure, and a second-type semiconductor layer provided in the nitride light emitting layer.
1. A nanorod light emitting diode (LED) comprising:
a first-type semiconductor layer including a body and a pyramidal structure continuously provided from the body;
a nitride light emitting layer provided on the pyramidal structure; and
a second-type semiconductor layer provided on the nitride light emitting layer,
wherein the first-type semiconductor layer, the nitride light emitting layer, and the second-type semiconductor layer are stacked to form a nanorod,
wherein the nanorod has a diameter in a direction, in which, the first-type semiconductor layer, the nitride light emitting layer, and the second-type semiconductor layer are stacked, and
wherein a diameter of the first-type semiconductor layer and a diameter of the second-type semiconductor layer are same as the diameter of the nanorod.
2. The nanorod LED of claim 1 , wherein the diameter ranges from about 0.1 μm to about 1 μm.
3. The nanorod LED of claim 1 , wherein a thickness of the nanorod is greater than the diameter.
4. The nanorod LED of claim 1 , wherein a maximum thickness of the second-type semiconductor layer is in a range between 20 nm to 2 μm.
5. The nanorod LED of claim 1 , wherein the first-type semiconductor layer and the second-type semiconductor layer include Alx 1 In y1 Ga 1-x1-y1 N (0≤x1≤1, 0≤y1≤1, 0≤(x1+y1)≤1).
6. The nanorod LED of claim 1 , wherein the nitride light emitting layer includes Al x2 In y2 Ga 1-x2-y2 N (0.1≤(x2+y2)≤1, 0.1<y2<0.6).
7. The nanorod LED of claim 1 , wherein the first-type semiconductor layer includes a dopant including Si, Ge, and Sn.
8. The nanorod LED of claim 1 , wherein the second-type semiconductor layer includes Mg and B.
9. The nanorod LED of claim 1 , wherein the pyramidal structure includes a hexagonal pyramidal structure or a truncated hexagonal pyramidal structure.
10. The nanorod LED of claim 1 , wherein an entire upper surface of the second-type semiconductor layer is positioned to be higher than a maximum height of the nitride light emitting layer.
11. The nanorod LED of claim 10 , wherein an upper surface of the second-type semiconductor layer is configured to have a planar or concave-convex structure.
12. The nanorod LED of claim 1 , wherein the nanorod is configured to have a circular cross-section or a hexagonal cross-section.
13. The nanorod LED of claim 1 , wherein the pyramidal structure is provided in plurality.
14. The nanorod LED of claim 1 , wherein the nanorod LED further includes an insulating layer directly between a portion of the nitride light emitting layer and a portion of the body of the first-type semiconductor layer.
15. The nanorod LED of claim 1 , further comprising a protective layer on a side surface of the nanorod.
16. A display apparatus comprising:
a substrate;
a common electrode provided on a first side of an upper surface of the substrate;
a plurality of pixel electrodes provided to face the common electrode and spaced apart from each other; and
a nanorod light emitting diode (LED) connected between the common electrode and the plurality of pixel electrodes,
wherein the nanorod LED includes:
a first-type semiconductor layer including a body and a pyramidal structure continuously provided from the body;
a nitride light emitting layer provided in the pyramidal structure; and
a second-type semiconductor layer provided on the nitride light emitting layer,
wherein the first-type semiconductor layer, the nitride light emitting layer, and the second-type semiconductor layer are stacked to form a nanorod,
wherein the nanorod has a diameter in a direction, in which, the first-type semiconductor layer, the nitride light emitting layer, and the second-type semiconductor layer are stacked, and
wherein a diameter of the first-type semiconductor layer and a diameter of the second-type semiconductor layer are same as the diameter of the nanorod.
17. The display apparatus of claim 16 , wherein the diameter ranges from about 0.1 μm to about 1 μm.
18. The display apparatus of claim 16 , wherein a thickness of the nanorod is greater than the diameter.
19. The display apparatus of claim 16 , wherein a maximum thickness of the second-type semiconductor layer is in a range between 20 nm to 2 μm.
20. The display apparatus of claim 16 , wherein the first-type semiconductor layer and the second-type semiconductor layer include Al x1 In y1 Ga 1-x1-y1 N (0≤x1≤1, 0≤y1≤1, 0≤(x1+y1)≤1).
21. The display apparatus of claim 16 , wherein the nitride light emitting layer includes Al x2 In y2 Ga 1-x2-y2 N (0.1≤(x2+y2)≤1, 0.1<y2<0.6).
22. The display apparatus of claim 16 , wherein the stacking direction of the nanorod LED is parallel to the substrate.
23. The display apparatus of claim 16 , wherein an entire upper surface of the second-type semiconductor layer is positioned to be higher than a point of a maximum height of the nitride light emitting layer.
24. The display apparatus of claim 23 , wherein an upper surface of the second-type semiconductor layer is configured to have a planar or concave-convex structure.
25. The display apparatus of claim 16 , wherein the nanorod is configured to have a circular cross-section or a hexagonal cross-section.
26. The display apparatus of claim 16 , wherein the pyramidal structure is provided in plurality.
27. The display apparatus of claim 16 , further comprising an insulating layer directly between a portion of the nitride light emitting layer and a portion of the body of the first-type semiconductor layer.
28. The display apparatus of claim 16 , further comprising a protective layer on a side surface of the nanorod.
29. A nanorod comprising:
a first-type semiconductor layer including a body portion and a top portion provided on the body portion, the top portion having a structure configured to expose one or more semi-polar planes;
a nitride light emitting layer provided on the top portion of the first-type semiconductor layer; and
a second-type semiconductor layer provided on the nitride light emitting layer,
wherein a diameter of the first-type semiconductor layer and a diameter of the second-type semiconductor layer are same as a diameter of the nanorod.
30. The nanorod of claim 29 , wherein the first-type semiconductor layer, the nitride light emitting layer, and the second-type semiconductor layer are stacked to form the nanorod, and
wherein the nanorod has a same diameter in a direction, in which, the first-type semiconductor layer, the nitride light emitting layer, and the second-type semiconductor layer are stacked.