Pixel, stage circuit and organic light emitting display device having the pixel and the stage circuit
A pixel includes a pixel circuit and an organic light emitting diode. The pixel circuit has first, second, third, and fourth transistors. The first transistor controls an amount of current flowing from a first driving power supply coupled to a first node to a second driving power supply through the organic light emitting diode. The turns on when a scan signal is supplied to a first scan line. The third transistor turns on when a scan signal is supplied to a second scan line. The fourth transistor turns on when a scan signal is supplied to a third scan line. The first transistor is a p-type Low Temperature Poly-Silicon thin film transistor and the third transistor and the fourth transistor are n-type oxide semiconductor thin film transistors.
1. A pixel, comprising:
an organic light emitting diode;
a first transistor having a first electrode coupled to a first node and a second electrode coupled to an anode electrode of the organic light emitting diode, the first transistor to control an amount of driving current flowing from a first driving power supply (ELVDD) coupled to the first node to a second driving power supply (ELVSS) through the organic light emitting diode;
a second transistor coupled between a data line and the first node, and a gate electrode of the second transistor coupled to a first scan line;
a third transistor coupled between a gate electrode and the second electrode of the first transistor, and a gate electrode of the third transistor coupled to a second scan line, wherein
each of the first transistor and the second transistor includes an active layer including polysilicon,
the third transistor include an active layer including an oxide semiconductor material, and
a first scan signal sun lied to the first scan line and a second scan signal supplied to the second scan line are set to signals laving opposite polarities and overlapping.
2. The pixel as claimed in claim 1 , wherein the first scan signal is set to a low voltage and the second scan signal is set to a high voltage.
3. The pixel as claimed in claim 1 , further comprising:
a fourth transistor coupled between the gate electrode of the first transistor and an initialization power supply; and
a gate electrode of the fourth transistor coupled to a third scan line, wherein
the fourth transistor includes an active layer including an oxide semiconductor material and a third scan signal is supplied to the third scan line.
4. The pixel as claimed in claim 3 , wherein the first scan signal and the third scan signal are not overlapped.
5. The pixel as claimed in claim 3 , wherein the first scan line, the second scan line, and the third scan lines are different scan lines.
6. The pixel as claimed in claim 3 , further comprising:
a second node connected to the gate electrode of the first transistor, the third transistor, the fourth transistor, and a storage capacitor, wherein
at least two transistors directly connected to the second node are oxide semiconductor thin film transistors.
7. The pixel as claimed in claim 6 , wherein
the second node is coupled between an active layer including an oxide semiconductor material of the third transistor and a first electrode of the storage capacitor, and
a second electrode of the storage capacitor is connected to the first driving power supply (ELVDD).
8. The pixel as claimed in claim 3 , further comprising:
a fifth transistor coupled between the first driving power supply (ELVDD) and the first node, and
a gate electrode of the fifth transistor coupled to a light emission control line, wherein
the fifth transistor is a p-type LTPS thin film transistor.
9. The pixel as claimed in claim 8 , wherein the first node is connected to the fifth transistor, the first transistor, and the second transistor.
10. The pixel as claimed in claim 8 , further comprising:
a sixth transistor coupled between the second electrode of the first transistor and the anode electrode of the organic light emitting diode, and
a gate electrode of the sixth transistor coupled to the light emission control line, wherein
the sixth transistor is a p-type a Low Temperature Poly-Silicon (LTPS) thin film transistor.
11. The pixel as claimed in claim 10 , wherein each of the first transistor, the fifth transistor, and the sixth transistor is a p-type LTPS thin film transistor and includes an active layer including polysilicon.
12. The pixel as claimed in claim 1 , wherein a transistor including an oxide semiconductor material places the first transistor in a diode-connected state in response to the transistor being turned on.
13. A pixel, comprising:
an organic light emitting diode;
a first transistor having a first electrode coupled to a first node and a second electrode coupled to an anode electrode of the organic light emitting diode, the first transistor to control an amount of driving current flowing from a first driving power supply (ELVDD) coupled to the first node to a second driving power supply (ELVSS) through the organic light emitting diode;
a second transistor coupled between a data line and the first node, and a gate electrode of the second transistor coupled to a first scan line;
a third transistor having an active layer including an oxide semiconductor material, the third transistor coupled between a gate electrode and the second electrode of the first transistor, and a gate electrode of the third transistor coupled to a second scan line; and
a fourth transistor coupled between the gate electrode of the first transistor and an initialization power supply, and a gate electrode of the fourth transistor coupled to a third scan line, wherein
the first transistor and the second transistor are Low Temperature Poly-Silicon (LTPS) thin film transistors, and
the third transistor and fourth transistor are oxide semiconductor thin film transistors.
14. The pixel as claimed in claim 13 , wherein the first scan line, the second scan line, and the third scan lines are different scan lines.
15. The pixel as claimed in claim 13 , further comprising:
a fifth transistor coupled between the first driving power supply (ELVDD) and the first node, and
a gate electrode of the fifth transistor coupled to a light emission control line, wherein
the fifth transistor is a p-type LTPS thin film transistor.
16. The pixel as claimed in claim 15 , wherein the first node is connected to the fifth transistor, the first transistor, and the second transistor.
17. The pixel as claimed in claim 15 , further comprising:
a sixth transistor coupled between the second electrode of the first transistor and the anode electrode of the organic light emitting diode, and
a gate electrode of the sixth transistor coupled to the light emission control line, wherein
the sixth transistor is a p-type LTPS thin film transistor.
18. The pixel as claimed in claim 17 , wherein
the fifth transistor, the first transistor, and the sixth transistor in the driving current flowing from the first driving power supply (ELVDD) coupled to the first node to the second driving power supply (ELVSS) through the organic light emitting diode are LTPS transistors, and
all transistors directly connected to the gate electrode of the first transistor are oxide semiconductor thin film transistors.
19. The pixel as claimed in claim 13 , further comprising:
a second node connected to a storage capacitor, the gate electrode of the first transistor, the third transistor, and the fourth transistor.
20. The pixel as claimed in claim 13 , wherein when the second transistor is turned on, the first transistor is in a diode-connected state.
21. The pixel as claimed in claim 19 , wherein when the first transistor is turned on and in a diode connected state, a data signal supplied to the first node passes to the second node via the first transistor.