Monolithic growth of epitaxial silicon devices via co-doping
In one general embodiment, a structure includes a first diode, comprising: a first layer having a first type of dopant, and a second layer above the first layer, the second layer having a second type of dopant that is opposite to the first type of dopant. A second diode is formed directly on the first diode. The second diode comprises a first layer having a third type of dopant and a second layer above the first layer of the second diode, the second layer of the second diode having a fourth type of dopant that is opposite to the third type of dopant. In another general embodiment, a process includes a repeated sequence of growing a first layer having a first type of electrically active dopant and growing a second layer having a second type of electrically active dopant that is opposite to the first type of dopant.
1. A structure, comprising:
a first diode, comprising:
a first layer having a first type of dopant, and
a second layer above the first layer, the second layer having a second type of dopant and a first electrically inactive co-dopant,
wherein an average concentration of the first electrically inactive co-dopant is at least 1×10 19 cm −3 ,
wherein the first type of dopant of the first layer is one of either a P-type or an N-type and the second type of dopant of the second layer is the other one of either the P-type or N-type; and
a second diode formed directly on the first diode, the second diode comprising:
a first layer having a third type of dopant and a second electrically inactive co-dopant, and
a second layer above the first layer of the second diode, the second layer of the second diode having a fourth type of dopant,
wherein the third type of dopant of the first layer is one of either a P-type or an N-type and the fourth type of dopant of the second layer is the other one of either the P-type or N-type.
2. The structure as recited in claim 1 , wherein the first and third types of dopants are the same electrically active dopant, wherein the second and fourth types of dopants are the same electrically active dopant.
3. The structure as recited in claim 1 , wherein the first and third types of dopants are different electrically active dopants.
4. A structure, comprising:
a first diode, comprising:
a first layer having a first type of dopant, and
a second layer above the first layer, the second layer having a second type of dopant; and
a second diode formed directly on the first diode, the second diode comprising:
a first layer having a third type of dopant, and
a second layer above the first layer of the second diode, the second layer of the second diode having a fourth type of dopant,
wherein the second layer of the first diode includes a first electrically inactive co-dopant, wherein the first layer of the second diode includes a second electrically inactive co-dopant,
wherein an average concentration of the second electrically inactive co-dopant is at least 1×10 19 cm −3 .
5. The structure as recited in claim 4 , wherein an average concentration of the first electrically inactive co-dopant is at least 1×10 19 cm −3 .
6. The structure as recited in claim 1 , wherein all of the layers have physical characteristics of epitaxial growth.
7. The structure as recited in claim 1 , wherein the first layer of the second diode and the second layer of the first diode are degenerate thereby forming a tunneling diode at an interface of the first diode and the second diode.
8. The structure as recited in claim 7 , wherein the tunneling diode has a reverse breakdown voltage equal to or lower than 200 me V.
9. A structure, comprising:
a first diode, comprising:
a first layer having a first type of dopant, and
a second layer above the first layer, the second layer having a second type of dopant and a first electrically inactive co-dopant,
wherein an average concentration of the first electrically inactive co-dopant is at least 1×10 19 cm −3 ,
wherein the first type of dopant of the first layer is one of either a P-type or an N-type and the second type of dopant of the second layer is the other one of either the P-type or N-type; and
a second diode formed directly on the first diode, the second diode comprising:
a first layer having a third type of dopant and a second electrically inactive co-dopant, and
a second layer above the first layer of the second diode, the second layer of the second diode having a fourth type of dopant,
wherein each diode includes a doped intermediate layer, wherein a concentration of the dopant in the respective intermediate layer is at least ten times lower relative to concentrations of dopants in layers directly adjacent thereto.
10. The structure as recited in claim 1 , wherein at least one of the layers has a gradient in dopant concentration along a thickness direction thereof.
11. The structure as recited in claim 1 , wherein average doping concentrations of the dopants in the first layer of the first diode and the second layer of the second diode are in a range from 1×10 18 cm −3 to 1×10 20 cm −3 .
12. The structure as recited in claim 1 , comprising a third diode formed directly on the second diode, the third diode comprising:
a first layer having a fifth type of dopant, and
a second layer above the first layer of the third diode, the second layer of the third diode having a sixth type of dopant that is opposite to the fifth type of dopant.
13. The structure as recited in claim 1 , wherein the diodes are Zener diodes.
14. The structure as recited in claim 1 , wherein the diodes are drift step recovery diodes.
15. A process for forming the structure as recited in claim 1 , the process comprising:
forming the first diode by growing the first layer of the first diode and growing the second layer of the first diode above the first layer; and
forming the second diode above the first diode by growing the first layer of the second diode and growing the second layer of the second diode above the first layer of the second diode.
16. The process as recited in claim 15 , comprising ad ding an electrically inactive co-dopant to the layer of each diode that is adjacent another of the diodes.
17. The process as recited in claim 15 , wherein a tunneling diode is formed at an interface between the first and second diodes.
18. The process as recited in claim 15 , comprising forming a doped intermediate layer between the first and second layers of each diode, the intermediate layers having an at least ten times lower concentration of dopant relative to adjacent layers thereto.
19. The structure as recited in claim 1 , wherein the first type of dopant is a P-type dopant, wherein the second type of dopant is an N-type dopant.
20. The structure as recited in claim 1 , wherein the first type of dopant is an N-type dopant, wherein the second type of dopant is a P-type dopant.