Granted Patent B2

US 12,531,400 · App. 17/973,363 · Granted Jan 20, 2026

Inventor: Espen Doedens (Halden, NO)

Assignee: NEXANS

H02G1/14H02G1/12

Abstract

Claims (24)

1 . A method for preparing a cable end of a cable for transition, wherein the cable has an electric conductor and an insulation system surrounding the electric conductor, the insulation system comprising an inner semiconducting layer, an insulating layer and an outer semiconducting layer, the method comprising:

removing the outer semiconducting layer from an end section of the cable, thereby providing an uncovered insulation layer surface on the end section of the cable; and

measuring a surface roughness of the uncovered insulation layer surface by optical profilometry and deriving a measured value of a roughness parameter for the uncovered insulation layer surface;

comparing the measured value to a preselected reference value of the same roughness parameter;

determining that the measured value is higher than the preselected reference value for the roughness parameter and that the uncovered insulation layer surface does not have an acceptable surface quality;

preparing a new uncovered insulation layer surface by one of:

cutting the end section of the cable to provide a new cable end and removing the outer semiconducting layer from the new end section of the cable, thereby providing the new uncovered insulation layer surface on the new end section of the cable; or

removing part of the insulation layer from the end section of the cable, thereby providing the new uncovered insulation layer surface;

measuring the surface roughness of the new uncovered insulation layer surface by optical profilometry and deriving a measured value of the roughness parameter for the new uncovered insulation layer surface;

comparing the measured value to a preselected reference value of the same roughness parameter; and

determining that the measured value is lower than the preselected reference value for the roughness parameter and that the new uncovered insulation layer surface has an acceptable surface quality for transition.

2 . The method according to claim 1 , wherein the surface roughness of the obtained uncovered insulation layer surface is measured in situ by use of a portable optical profilometry apparatus.

3 . The method according to claim 1 , wherein the roughness parameter is the average roughness, Sa, expressed as:

Sa=∫∫ a |Z ( x,y )| dxdy

where Z(x,y) represents a matrix of 3D coordinates on the surface, with Z expressing the local distance from the mean plane in m.

4 . The method according to claim 3 , wherein the preselected reference value for the roughness parameter Sa ref is one of: 800 nm, 600 nm, 400 nm, or 200 nm.

5 . The method according to claim 1 , wherein the roughness parameter is the unitless RMS surface slop, Sdq, expressed as:

Sdq =√{square root over (1/ A∫ 0 Lx ∫ 0 Ly (∂ Z ( x,y )/∂ x ) 2 +(∂ Z ( x,y )/∂ y ) 2 dxfy )}

where A is the area of the measurement domain in m 2 , Lx and Ly are respectively the x and y length of the investigated domain in m.

6 . The method according to claim 5 , wherein the preselected reference value for the roughness parameter Sdg ref is one of: 0.8, 0.6, 0.4, or 0.2.

7 . The method of claim 1 comprising:

jointing the end sections of the cable to an end section of a second cable having an electric conductor and an insulation system surrounding the electric conductor, the insulation system comprising an inner semiconducting layer, an insulating layer and an outer semiconducting layer.

8 . The method of claim 7 wherein an uncovered insulation layer surface is prepared at an end section of the second cables.

9 . The method of claim 8 , wherein the jointing step is realized using a pre-molded joint.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (16)