Semiconductor device packages
The present disclosure relates to methods and apparatus for forming a thin-form-factor semiconductor device package. In certain embodiments, a glass or silicon substrate is patterned by laser ablation to form structures for subsequent formation of interconnections therethrough. The substrate is thereafter utilized as a frame for forming a semiconductor device package, which may have one or more embedded double-sided dies therein. In certain embodiments, an insulating layer is formed over the substrate by laminating a pre-structured insulating film thereon. The insulating film may be pre-structured by laser ablation to form structures therein, followed by selective curing of sidewalls of the formed structures.
1 . A package assembly, comprising:
a core frame having a first surface opposite a second surface, the core frame further comprising:
a frame material that comprises silicon;
at least one cavity with a semiconductor die disposed therein, the semiconductor die having electrical contacts disposed on two opposing sides thereof; and
a via comprising a via surface that defines an opening extending through the core frame from the first surface to the second surface;
an insulating layer disposed over the first surface and the second surface, the insulating layer contacting at least a portion of each side of the semiconductor die; and
an electrical interconnection disposed within the via, wherein the insulating layer is disposed between the via surface and the electrical interconnection;
a stiffener frame formed over the insulating layer; and
a cladding layer disposed on the stiffener frame.
2 . The package assembly of claim 1 , wherein the at least one cavity has lateral dimensions between about 3 mm and about 50 mm.
3 . The package assembly of claim 2 , wherein the lateral dimensions of the at least one cavity are greater than lateral dimensions of the semiconductor die by less than about 150 μm.
4 . The package assembly of claim 1 , wherein the semiconductor dies comprises an integrated circuit formed on a first side and a power delivery network formed on a second side opposing the first side.
5 . The package assembly of claim 1 , further comprising an oxide layer formed on the core frame.
6 . The package assembly of claim 1 , further comprising a metal layer formed on the core frame.
7 . The package assembly of claim 6 , wherein the metal layer comprises nickel.
8 . The package assembly of claim 1 , wherein the insulating layer comprises an epoxy resin.
9 . The package assembly of claim 8 , wherein the epoxy resin comprises ceramic particles.
10 . The package assembly of claim 9 , wherein the ceramic particles comprise silica particles.
11 . The package assembly of claim 1 , further comprising an adhesion layer or a seed layer disposed between the electrical interconnection and the insulating layer.
12 . The package assembly of claim 11 , wherein the adhesion layer comprises molybdenum and the seed layer comprises copper.
13 . The package assembly of claim 1 , further comprising:
a capacitor disposed over the insulating layer and electrically coupled to one or more contacts of the semiconductor die.
14 . The package assembly of claim 1 , further comprising a capacitor disposed over the insulating layer and within the opening of the stiffener frame, the capacitor electrically coupled to one or more contacts of the semiconductor die.
15 . A package assembly, comprising:
an embedded die assembly, comprising:
a core frame that comprises silicon;
an oxide layer disposed over surfaces of the core frame;
one or more semiconductor dies disposed within the core frame, the one or more semiconductor dies having an integrated circuit formed on a first side and a power delivery network formed on a second side opposing the first side; and
an insulating layer formed on the oxide layer, the insulating layer comprising an epoxy resin material having ceramic particles disposed therein;
one or more metal interconnections disposed within a portion of the embedded die assembly;
a stiffener frame formed over the insulating layer, the stiffener frame comprising silicon material and having an opening formed therein; and
a metal cladding layer disposed on the stiffener frame.
16 . The package assembly of claim 15 , wherein the core frame further comprises:
one or more cavities formed therein, the one or more cavities having the one or more semiconductor dies disposed therein; and
one or more vias formed therein, wherein the one or more metal interconnections are disposed through the one or more vias.
17 . The package assembly of claim 15 , further comprising:
a molybdenum adhesion layer and a copper seed layer disposed between each of the one or more metal interconnections and the insulating layer.
18 . A package assembly, comprising:
an embedded die assembly, comprising:
a core frame that comprises silicon;
one or more semiconductor dies disposed within the core frame, the one or more semiconductor dies having electrical contacts disposed on two opposing sides thereof;
a first insulating layer formed on the core frame, the first insulating layer comprising an epoxy resin material comprising ceramic particles; and
one or more electrical interconnections disposed through the core frame or the first insulating layer; and
a redistribution layer formed on the embedded die assembly, the redistribution layer comprising:
a second insulating layer formed on the first insulating layer;
one or more electrical redistribution connections disposed through the second insulating layer;
a stiffener frame formed over the insulating layer, the stiffener frame comprising silicon material and having an opening formed therein; and
a metal cladding layer disposed on the stiffener frame.
19 . The package assembly of claim 18 , wherein the second insulating layer is formed of the same material as the first insulating layer.