Memory device and method of manufacturing the same
A memory device and a method of manufacturing the memory device includes a stacked structure having a cell region and a slimming region. The memory device also includes a plurality of vertical channel structures each including memory cells and vertically passing through the stacked structure in the cell region. The memory device further includes a plurality of support structures each having a structure of each of the vertical channel structures and vertically passing through the stacked structure in the slimming region. The plurality of support structures have different heights depending on the shape of the stacked structure in the slimming region.
1. A method of manufacturing a memory device, the method comprising:
providing a stacked structure having a cell region and a slimming region;
forming vertical channel structures in the stacked structure in the cell region;
forming support structures, in the stacked structure in the slimming region simultaneously with forming the vertical channel structures, wherein the support structures have the same structure as the vertical channel structures; and
performing a slimming process so that the stacked structure in the slimming region and the support structures have a stepped structure.
2. The method according to claim 1 , wherein simultaneously forming of the vertical channel structures and the support structures comprises:
forming vertical holes in the stacked structure in the cell region and in the slimming region, the vertical holes passing through the stacked structure; and
sequentially forming a memory layer, a channel layer, and a vertical insulating layer in each of the vertical holes formed in the cell region and in the slimming region.
3. The method according to claim 1 , wherein the performing of the slimming process comprises:
forming, on the stacked structure, a mask pattern including an opening through which a portion of the slimming region is exposed;
simultaneously etching a portion of the stacked structure and portions of the support structures that are exposed through the opening; and
removing the mask pattern,
wherein forming the mask pattern, etching, and removing the mask pattern are repeated while an area of the opening is reduced, so that the material layers included in the stacked structure have a stepped shape.
4. The method according to claim 1 , further comprising forming contact plugs coming into contact with conductive layers exposed through different layers in the stacked structure in the slimming region after the slimming process has been performed.