IP Library › Granted Patent US 12,369,446
Granted Patent B2
US 12,369,446 · App. 17/975,667 · Granted Jul 22, 2025

Retinomorphic sensor

Inventor: John G Labram (London, GB)
Assignee: OREGON STATE UNIVERSITY
H10K10/10H10K39/32H10K30/30
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Quick Facts
Patent No.
US 12,369,446
App. No.
17/975,667
Granted
Jul 22, 2025
Kind
B2
Abstract

A retinomorphic sensor is demonstrated employing organic semiconductors. The sensor produces an output voltage in response to changes in illumination, but zero output voltage under constant illumination. The device is stable for periods up to one hour, exhibits a decay constant tunable through choice of external resistor, with fastest response times below 10 μs.

Claims (15)

1. A retinomorphic sensor, comprising an upper electrode and a lower electrode, and an organic semiconductor layer disposed between the upper and lower electrodes and in electrical communication with the upper electrode, and a dielectric layer disposed between the upper and lower electrodes and in electrical communication with the lower electrode.

2. The retinomorphic sensor of claim 1 , wherein the organic semiconductor layer includes poly (3-hexylthiophene-2,5-diyl).

3. The retinomorphic sensor of claim 1 , wherein the organic semiconductor layer includes phenyl-C 61 -butyric acid methyl.

4. The retinomorphic sensor of claim 1 , wherein the organic semiconductor layer includes a 50:50 (weight %) blend of phenyl-C 61 -butyric acid methyl and poly (3-hexylthiophene-2,5-diyl).

5. The retinomorphic sensor of claim 1 , wherein the upper electrode includes a transparent conducting oxide.

6. The retinomorphic sensor of claim 1 , wherein the upper electrode includes indium tin oxide.

7. The retinomorphic sensor of claim 1 , wherein the lower electrode includes doped silicon.

8. The retinomorphic sensor of claim 1 , wherein the organic semiconductor layer is absorptive to visible light.

9. The retinomorphic sensor of claim 1 , comprising a resistor disposed in series with the retinomorphic sensor, the retinomorphic sensor having a decay time which is tunable in response to the value of the resistor.

10. The retinomorphic sensor of claim 9 , wherein the decay time of the retinomorphic sensor decreases with a decrease in the value of the resistor.

11. The retinomorphic sensor of claim 1 , wherein a response time of the retinomorphic sensor is 10 μs or less.

12. The retinomorphic sensor of claim 1 , wherein the retinomorphic sensor is configured to produce a response to a change in light level on the retinomorphic sensor without an input voltage applied to the retinomorphic sensor.

13. The retinomorphic sensor of claim 1 , wherein the retinomorphic sensor comprises an integrated vertical structure in which a resistor is disposed in a stack between a capacitor and a substrate and in electrical communication with the capacitor and substrate.

14. The retinomorphic sensor of claim 1 , wherein the retinomorphic sensor comprises an integrated vertical structure in which a transistor is disposed in a stack between a capacitor and a substrate and in electrical communication with the capacitor and substrate.

15. An apparatus comprising an array of retinomorphic sensors of claim 1 .

Assignments (2)
CONFIRMATORY LICENSE Recorded Jan 29, 2025
From: OREGON STATE UNIVERSITY
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 070043/0675 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 16, 2023
From: LABRAM, JOHN G
To: OREGON STATE UNIVERSITY
Reel/Frame 065584/0526 →
Continuity (2)
Provisional Application 63263545 · Nov 4, 2021
Related Publication 20230132824A1 · May 4, 2023
References Cited (50)
US 8519382B2 · Boulais · 2013 [cited by applicant]
US 20100135591A1 · Zador · 2010 [cited by applicant]
US 20160093273A1 · Wang · 2016 [cited by applicant]
Y.-L. Wu, K. Fukuda, T. Yokota, T. Someya, Adv. Mater. 2019, 31, 1903687. (Year: 2019). [cited by examiner]
D. I. Barnea, H. F. Silverman, IEEE Trans. Comput. 1972, C-21, 179. [cited by applicant]
B. D. Lucas, T. Kanade, in Proc. 7th Int. Jt. Conf. Artif. Intell.—vol. 2, Morgan Kaufmann Publishers Inc., San Francisco, CA, USA, 1981, pp. 674-679. [cited by applicant]
C. Posch, T. Serrano-Gotarredona, B. Linares-Barranco, T. Delbruck, Proc. IEEE 2014, 102, 1470. [cited by applicant]
Y. Guo, Y. Liu, A. Oerlemans, S. Lao, S. Wu, M. S. Lew, Neurocomputing 2016, 187, 27. [cited by applicant]
G. Yu, G. Srdanov, J. Wang, H. Wang, Y. Cao, A. J. Heeger, Synth. Met. 2000, 111-112, 133. [cited by applicant]
E. D. Adrian, R. Matthews, J. Physiol. 1927, 63, 378. [cited by applicant]
H. K. Hartline, C. H. Graham, J. Cell. Comp. Physiol. 1932, 1, 277. [cited by applicant]
C. Trujillo Herrera, J. G. Labram, Appl. Phys. Lett. 2020, 117, 233501. [cited by applicant]
H. J. Snaith, Nat. Mater. 2018, 17, 372. [cited by applicant]
H. J. Snaith, A. Abate, J. M. Ball, G. E. Eperon, T. Leijtens, N. K. Noel, S. D. Stranks, J. T.-W. Wang, K. Wojciechowski, W. Zhang, J. Phys. Chem. Lett. 2014, 5, 1511. [cited by applicant]
J. M. Frost, A. Walsh, Acc. Chem. Res. 2016, 49, 528. [cited by applicant]
Y.-H. Lin, P. Pattanasattayavong, T. D. Anthopoulos, Adv. Mater. 2017, 29, 1702838. [cited by applicant]
J. G. Labram, D. H. Fabini, E. E. Perry, A. J. Lehner, H. Wang, A. M. Glaudell, G. Wu, H. Evans, D. Buck, R. Cotta, L. Echegoyen, F. Wudl, R. Seshadri, M. L. Chabinyc, J. Phys. Chem. Lett. 2015, 6, 3565. [cited by applicant]
H. Kim, C. M. Gilmore, A. Piqué, J. S. Horwitz, H. Mattoussi, H. Murata, Z. H. Kafafi, D. B. Chrisey, J. Appl. Phys. 1999, 86, 6451. [cited by applicant]
W. Cao, J. Li, H. Chen, J. Xue, J. Photonics Energy 2014, 4, 040990. [cited by applicant]
H. Shirakawa, E. J. Louis, A. G. MacDiarmid, C. K. Chiang, A. J. Heeger, J. Chem. Soc. Chem. Commun. 1977, 0, 578. [cited by applicant]
S. Holliday, R. S. Ashraf, A. Wadsworth, D. Baran, S. A. Yousaf, C. B. Nielsen, C.-H. Tan, S. D. Dimitrov, Z. Shang, N. Gasparini, M. Alamoudi, F. Laquai, C. J. Brabec, A. Salleo, J. R. Durrant, I. McCulloch, Nat. Commu… [cited by applicant]
A. F. Paterson, S. Singh, K. J. Fallon, T. Hodsden, Y. Han, B. C. Schroeder, H. Bronstein, M. Heeney, I. McCulloch, T. D. Anthopoulos, Adv. Mater. 2018, 30, 1801079. [cited by applicant]
L. M. Herz, ACS Energy Lett. 2017, 1539. [cited by applicant]
A. Miyata, A. Mitioglu, P. Plochocka, O. Portugall, J. T.-W. Wang, S. D. Stranks, H. J. Snaith, R. J. Nicholas, Nat. Phys. 2015, 11, 582. [cited by applicant]
M. Knupfer, Appl. Phys. A 2003, 77, 623. [cited by applicant]
L. Benatto, K. R. de A. Sousa, M. Koehler, J. Phys. Chem. C 2020, 124, 13580. [cited by applicant]
S. M. Sze, K. K. Ng, Physics of Semiconductor Devices, John Wiley & Sons, 2006. [cited by applicant]
M. S. Vezie, S. Few, I. Meager, G. Pieridou, B. Dörling, R. S. Ashraf, A. R. Goñi, H. Bronstein, I. McCulloch, S. C. Hayes, M. Campoy-Quiles, J. Nelson, Nat. Mater. 2016, advance online publication, DOI 10.1038/nmat4645. [cited by applicant]
J. Nelson, Mater. Today 2011, 14, 462. [cited by applicant]
F. Gao, L. J. A. Koster, T.-Q. Nguyen, N. Stingelin, Adv. Energy Mater. 2018, 8, 1802706. [cited by applicant]
C. Trujillo Herrera, M. J. Hong, J. G. Labram, ACS Appl. Electron. Mater. 2020, 2, 2257. [cited by applicant]
M. Jørgensen, K. Norrman, S. A. Gevorgyan, T. Tromholt, B. Andreasen, F. C. Krebs, Adv. Mater. 2012, 24, 580. [cited by applicant]
D. M. de Leeuw, M. M. J. Simenon, A. R. Brown, R. E. F. Einerhand, Synth. Met. 1997, 87, 53. [cited by applicant]
J. Ahmad, K. Bazaka, L. J. Anderson, R. D. White, M. V. Jacob, Renew. Sustain. Energy Rev. 2013, 27, 104. [cited by applicant]
C. G. Shuttle, B. O'Regan, A. M. Ballantyne, J. Nelson, D. D. C. Bradley, J. R. Durrant, Phys. Rev. B 2008, 78, 113201. [cited by applicant]
G. Lakhwani, A. Rao, R. H. Friend, Annu. Rev. Phys. Chem. 2014, 65, 557. [cited by applicant]
G. Juška, K. Genevičius, N. Nekrašas, G. Sliažys, G. Dennler, Appl. Phys. Lett. 2008, 93, 143303. [cited by applicant]
C. Liu, Y. Xu, Y.-Y. Noh, Mater. Today 2015, 18, 79. [cited by applicant]
I. Levine, S. Gupta, T. M. Brenner, D. Azulay, O. Millo, G. Hodes, D. Cahen, I. Balberg, J. Phys. Chem. Lett. 2016, 7, 5219. [cited by applicant]
J. G. Labram, E. E. Perry, N. R. Venkatesan, M. L. Chabinyc, Appl. Phys. Lett. 2018, 113, 153902. [cited by applicant]
I. Balberg, J. Appl. Phys. 1994, 75, 914. [cited by applicant]
L.-L. Chua, J. Zaumseil, J.-F. Chang, E. C.-W. Ou, P. K.-H. Ho, H. Sirringhaus, R. H. Friend, Nature 2005, 434, 194. [cited by applicant]
T. D. Anthopoulos, B. Singh, N. Marjanovic, N. S. Sariciftci, A. Montaigne Ramil, H. Sitter, M. Cölle, D. M. de Leeuw, Appl. Phys. Lett. 2006, 89, 213504. [cited by applicant]
O. Ostroverkhova, Chem. Rev. 2016, 116, 13279. [cited by applicant]
P. B. Miranda, D. Moses, A. J. Heeger, Phys. Rev. B 2001, 64, 081201. [cited by applicant]
I.-W. Hwang, D. Moses, A. J. Heeger, J. Phys. Chem. C 2008, 112, 4350. [cited by applicant]
A. Pivrikas, H. Neugebauer, N. S. Sariciftci, IEEE J. Sel. Top. Quantum Electron. 2010, 16, 1746. [cited by applicant]
C. J. Brabec, M. Heeney, I. McCulloch, J. Nelson, Chem. Soc. Rev. 2011, 40, 1185. [cited by applicant]
M. J. Ford, J. G. Labram, M. Wang, H. Wang, T.-Q. Nguyen, G. C. Bazan, Adv. Electron. Mater. 2017, 3, 1600537. [cited by applicant]
C. Trujillo Herrera, J. G. Labram, ACS Appl. Electron. Mater. 2022, 4, 92-98. [cited by applicant]