IP Library › Granted Patent US 12,394,620
Granted Patent B2
US 12,394,620 · App. 17/976,440 · Granted Aug 19, 2025

Benzyl compound passivation for selective deposition and selective etch protection

Inventors: Feng Q. Liu (San Jose, CA); Mark J. Saly (Santa Clara, CA); David Thompson (San Jose, CA)
Assignee: Applied Materials, Inc.
H01L21/02118C23C16/0272C23C16/34C23C16/40C23C16/45525H01L21/02227H01L21/0228
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Quick Facts
Patent No.
US 12,394,620
App. No.
17/976,440
Granted
Aug 19, 2025
Kind
B2
Abstract

A method includes forming a first layer and a second layer on a substrate, forming a passivation layer on a surface of the first layer without forming the passivation layer on a surface of the second layer by exposing the first layer and the second layer to a benzyl compound, and after forming the passivation layer on the first layer, performing at least one of: depositing a third layer on the second layer, or etching the second layer.

Claims (13)

1. A method comprising:

forming a first layer and a second layer on a substrate;

forming a passivation layer on a surface of the first layer without forming the passivation layer on a surface of the second layer by exposing the first layer and the second layer to a benzyl compound and causing catalytic polymerization of the benzyl compound using the first layer; and

after forming the passivation layer on the first layer, performing at least one processing step with respect to the second layer selectively.

2. The method of claim 1 , further comprising, prior to forming the passivation layer, performing a precleaning process to clean a surface of the first layer.

3. The method of claim 1 , wherein performing the at least one processing step comprises depositing a third layer on the second layer, and wherein depositing the third layer on the second layer comprises using at least one of: an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process.

4. The method of claim 1 , wherein the passivation layer comprises poly (phenylene methylene) (PPM).

5. The method of claim 1 , wherein the first layer comprises a transition metal oxide.

6. The method of claim 5 , wherein the first layer comprises at least one of: a tungsten oxide, a molybdenum oxide, or a nickel oxide.

7. The method of claim 1 , wherein the second layer comprises a dielectric layer.

8. The method of claim 7 , wherein the second layer comprises at least one of: silicon dioxide, a carbon-doped silicon oxide, silicon nitride, a transition metal oxide, or a transition metal nitride.

9. The method of claim 1 , wherein the second layer comprises a conductive material.

10. The method of claim 1 , wherein performing the at least one processing step comprises depositing a third layer on the second layer, and wherein the third layer comprises a metal oxide or a metal nitride.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 1, 2022
From: LIU, FENG Q.; SALY, MARK J.; THOMPSON, DAVID
To: APPLIED MATERIALS, INC.
Reel/Frame 061615/0932 →
Continuity (1)
Related Publication 20240145232A1 · May 2, 2024
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