Global-shutter pixel
A global-shutter pixel includes a semiconductor substrate that has a storage node and a photodiode region. A front surface of the substrate has a first recessed region between the photodiode region and the storage node in a first direction parallel to the front surface, and a second recessed region between the first recessed region and the storage node in the first direction. The first and second recessed regions extend into the substrate to a respective first recess-depth and a second recess-depth that exceeds the first recess-depth. The photodiode region includes (i) a first doped-section spanning a depth-range and having a first dopant concentration, and (ii) a second doped-section between the front surface and the first doped-section and having a second dopant concentration that is less than the first dopant concentration. The first doped-section includes a protrusion that extends at least partially beneath the first recessed region in the first direction.
1 . A global-shutter pixel comprising:
a semiconductor substrate that includes a storage node, a photodiode region and a front surface having a first recessed region between the photodiode region and the storage node in a first direction parallel to the front surface, and a second recessed region between the first recessed region and the storage node in the first direction;
the first and second recessed regions extending into the semiconductor substrate from the front surface to a respective first recess-depth and a second recess-depth that exceeds the first recess-depth;
the photodiode region including (i) a first doped-section spanning a depth-range and having a first dopant concentration, and (ii) a second doped-section between the front surface and the first doped-section and having a second dopant concentration that is less than the first dopant concentration;
the first doped-section including a protrusion that extends at least partially beneath the first recessed region in the first direction.
2 . The pixel of claim 1 , the first recess-depth exceeding a junction depth of the storage node.
3 . The pixel of claim 1 , further comprising a dielectric fill in the first recessed region and a conductive fill in the second recessed region.
4 . The pixel of claim 3 , further comprising, on the front surface, a transfer storage gate that includes a portion, located above the second recessed region, that either includes or is electrically connected to the conductive fill.
5 . The pixel of claim 1 , wherein a dopant concentration of the photodiode region increases between (i) a minimum depth of the second doped-section with respect to the front surface and (ii) a depth within the depth-range.
6 . The pixel of claim 1 , further comprising an isolation region adjacent to the photodiode region and extending from the front surface to an isolation depth such that a part of the photodiode region is between the isolation region and the first recessed region along the first direction.
7 . The pixel of claim 1 , the depth-range spanning between a lower dopant-depth and an upper dopant-depth with respect to the front surface, the upper dopant-depth being less than the second recess-depth, the lower dopant-depth exceeding the second recess-depth.
8 . The pixel of claim 7 ,
the semiconductor substrate having, opposite the front surface, a back surface having a back-surface recessed region aligned with the second recessed region in the first direction; and
a minimum distance between the back-surface recessed region and the second recessed region being less than a difference between the lower dopant-depth and the second recess-depth.
9 . The pixel of claim 1 , the second dopant concentration being less than one-half of the first dopant concentration.
10 . The pixel of claim 1 , in a direction perpendicular to the front surface, the first doped-section being between the second doped-section and a third doped-section, of the photodiode region, having a third dopant concentration that is less than the first dopant concentration.
11 . The pixel of claim 1 , the protrusion extending fully beneath the first recessed region such that, in the first direction, the second recessed region is closer to the protrusion than to the first recessed region.
12 . The pixel of claim 11 , in the first direction, the second recessed region being closer to the protrusion than to the first recessed region by at least one hundred nanometers.
13 . The pixel of claim 1 , in a second direction parallel to the front surface and perpendicular to the first direction, a width of the first recessed region exceeding a width of the photodiode region.
14 . The pixel of claim 1 , in a second direction parallel to the front surface and perpendicular to the first direction, a width of the second recessed region being less than a width of the first recessed region.
15 . A global-shutter pixel comprising:
a semiconductor substrate that includes a storage node, a photodiode region and a front surface having a first recessed region between the photodiode region and the storage node in a first direction parallel to the front surface, and a second recessed region between the first recessed region and the storage node in the first direction;
the first and second recessed regions extending into the semiconductor substrate from the front surface to a respective first recess-depth and a second recess-depth that exceeds the first recess-depth;
a dielectric fill in the first recessed region; and
a storage gate that (i) includes a conductive fill in the second recessed region and (ii) selectively couples the photodiode region to the storage node;
the photodiode region including (i) a first doped-section spanning a depth-range and having a first dopant concentration, and (ii) a second doped-section between the front surface and the first doped-section and having a second dopant concentration that is less than the first dopant concentration;
the first doped-section including a protrusion that extends at least partially beneath the first recessed region in the first direction.
16 . The pixel of claim 15 , the semiconductor substrate having a greater a refractive index than does the dielectric fill.
17 . The pixel of claim 15 , wherein a dopant concentration of the photodiode region increases between (i) a minimum depth of the second doped-section with respect to the front surface and (ii) a depth within the depth-range.
18 . The pixel of claim 15 , further comprising:
an isolation region adjacent to the photodiode region and extending from the front surface to an isolation depth such that a part of the photodiode region is between the isolation region and the first recessed region along the first direction;
a floating diffusion having a second junction depth less than the isolation depth; and
an output gate on the front surface that selectively couples the storage node to the floating diffusion.
19 . The pixel of claim 15 , in a second direction parallel to the front surface and perpendicular to the first direction, a width of the first recessed region exceeding a width of the photodiode region.