Granted Patent B2

US 12,353,122 · App. 17/980,539 · Granted Jul 8, 2025

Inventor: Chun-Liang Lin (Hsinchu, TW)

Assignee: Powerchip Semiconductor Manufacturing Corporation

G03F1/36

Abstract

Claims (30)

1. A method for forming a photomask, comprising:

providing a first target pattern, wherein the first target pattern comprises:

a first pattern area, comprising a block pattern with a width P 1 ; and

a second pattern area, comprising a plurality of stripe patterns, wherein the stripe patterns are arranged along a direction away from the first pattern area, a width of each of the stripe patterns is P 2 , and P 1 is greater than P 2 ;

defining a first sidewall reset area in the second pattern area;

executing a retarget procedure on the first target pattern to obtain a second target pattern, wherein the retarget procedure comprises:

retracting a sidewall of the block pattern facing one side of the adjacent stripe pattern; and

expanding sidewalls of at least part of the stripe patterns in the first sidewall reset area toward the adjacent stripe patterns or the adjacent block pattern; and

forming the photomask based on the second target pattern.

2. The method for forming the photomask according to claim 1 , wherein forming the photomask based on the second target pattern comprises:

correcting the second target pattern based on an optical proximity effect correction model; and

transferring the corrected second target pattern onto a photomask material to form the photomask.

3. The method for forming the photomask according to claim 1 , wherein a part of the stripe patterns overlaps with the first sidewall reset area, and another part of the stripe patterns does not overlap with the first sidewall reset area.

4. The method for forming the photomask according to claim 1 , further comprising:

setting a minimum pattern width P A and a minimum stripe pattern distance S A of an exposure process applicable to the photomask.

5. The method for forming the photomask according to claim 4 , wherein P A and S A are defined as:

a limit width of the stripe pattern and a limit distance between the stripe patterns on the photomask when forming more than 25 continuously arranged stripe photoresists by the exposure process on the premise that the stripe photoresist has a minimum width and there is a minimum spacing between the stripe photoresists.

6. The method for forming the photomask according to claim 4 , wherein in the first target pattern, the width P 2 of each of the stripe patterns is less than 1.09 times P A and greater than or equal to P A .

7. The method for forming the photomask according to claim 4 , wherein in the first target pattern, another side of the first pattern area opposite to the second pattern area comprises a depletion region, wherein a width of the depletion region is greater than or equal to 4(P A +S A ), wherein the depletion region does not comprise any structure or the depletion region comprises a polygonal pattern with a width P 3 less than 0.6 times P A .

8. The method for forming the photomask according to claim 4 , wherein a width of the first sidewall reset area is equal to 4(P A +S A ).

9. The method for forming the photomask according to claim 4 , wherein the retarget procedure further comprises:

selecting an effective sidewall among sidewalls of the stripe pattern overlapping with the first sidewall reset area, wherein a length of the effective sidewall is greater than 3 times P A , and a distance between the effective sidewall and the adjacent block pattern or the adjacent stripe pattern is less than 1.09 times S A and greater than or equal to S A ; and

expanding the effective sidewall of the stripe pattern toward the adjacent stripe pattern or the block pattern.

10. The method for forming the photomask according to claim 4 , wherein in the retarget procedure, the effective sidewall of the stripe pattern closest to the first pattern area expands by a distance A toward the first pattern area, and the effective sidewalls of the other stripe patterns in the first sidewall reset area expand by a distance B toward the adjacent stripe patterns, wherein A is greater than B.

11. The method for forming the photomask according to claim 10 , further comprising:

setting a minimum pattern width P A and a minimum stripe pattern distance S A of an exposure process applicable to the photomask, wherein A is greater than 14.5% of P A and B is greater than 9.1% of P A .

12. The method for forming the photomask according to claim 1 , wherein a distance between the stripe patterns in the first sidewall reset area is reduced after the retarget procedure.

13. The method for forming the photomask according to claim 1 , further comprising:

defining a second sidewall reset area in the second pattern area, wherein the first sidewall reset area is located between the second sidewall reset area and the first pattern area, wherein the retarget procedure further comprises:

expanding sidewalls of another part of the stripe patterns in the second sidewall reset area toward the adjacent stripe patterns, wherein an extent of expansion is less than an extent to which the sidewalls of at least part of the stripe patterns in the first sidewall reset area are expanded toward the adjacent stripe patterns or the block pattern.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (10)