Silicon carbide wafer and method of manufacturing same
Disclosed are a silicon carbide wafer and a method of manufacturing the same. The silicon carbide wafer includes an upper surface and a lower surface, the upper surface includes a first target region, the first target region being within 85% of a radius of the upper surface based on a center of the upper surface, a first peak omega angle measured at intervals of 15 mm in a first direction in the first target region is within −1° to +1° based on a peak omega angle measured at the center of the upper surface, and the first direction is a [1-100] direction and a direction passing through the center of the upper surface.
1. A silicon carbide wafer comprising an upper surface and a lower surface,
wherein the upper surface comprises a first target region, the first target region being within 85% of a radius of the upper surface based on a center of the upper surface,
wherein, in the first target region, a first peak omega angle in a rocking curve measured at intervals of 15 mm in a first direction is within −0.5° to +0.5° based on a peak omega angle in a rocking curve measured at the center of the upper surface,
wherein the first direction is a [1-100] direction and a direction passing through the center of the upper surface.
2. The silicon carbide wafer according to claim 1 , wherein an off-angle selected from 0° to 15° based on a (0001) plane is applied, and the upper surface is a C plane.
3. The silicon carbide wafer according to claim 2 , wherein the first peak omega angle ranges from −0.3° to +0.3° based on the peak omega angle at the center.
4. The silicon carbide wafer according to claim 2 , wherein the first peak omega angle ranges from −0.2° to +0.2° based on the peak omega angle at the center.
5. The silicon carbide wafer according to claim 2 , wherein the first peak omega angle ranges from −0.05° to +0.05° based on the peak omega angle at the center.
6. The silicon carbide wafer according to claim 2 , wherein a rate of change in the first peak omega angle according to a position in the first direction is 0.1°/15 mm or less.
7. The silicon carbide wafer according to claim 2 , wherein, in the target region, a second peak omega angle measured at intervals of 15 mm in a second direction is within −0.8° to +0.8° based on the peak omega angle at the center, and
the second direction is a [11-20] direction and a direction passing through the center of the upper surface.
8. The silicon carbide wafer according to claim 7 , wherein a rate of change in the second peak omega angle according to a position in the second direction is 0.2°/15 mm or less.
9. The silicon carbide wafer according to claim 8 , wherein the rate of change in the first peak omega angle is smaller than the rate of change in the second peak omega angle.
10. The silicon carbide wafer according to claim 8 , wherein the rate of change in the first peak omega angle is ⅔ times or less the rate of change in the second peak omega angle.
11. The silicon carbide wafer according to claim 1 , wherein the lower surface comprises a second target region, the second target region being within 85% of a radius of the lower surface based on a center of the lower surface,
wherein, in the second target region, a third peak omega angle in a rocking curve measured at intervals of 15 mm in a third direction is within −0.5° to +0.5° based on a peak omega angle in a rocking curve measured at the center of the lower surface,
wherein the third direction is a [1-100] direction and a direction passing through the center of the lower surface.
12. The silicon carbide wafer according to claim 11 , wherein an off-angle selected from 0° to 15° based on a (0001) plane is applied, and the lower surface is a Si plane.
13. A method of manufacturing a silicon carbide wafer, comprising:
manufacturing a silicon carbide ingot;
slicing the silicon carbide ingot; and
polishing the sliced upper surface and lower surface,
wherein the polished upper surface comprises a first target region, the first target region being within 85% of a radius of the upper surface based on a center of the upper surface,
wherein, in the first target region, a first peak omega angle in a rocking curve measured at intervals of 15 mm in a first direction is within −0.5° to +0.5° based on a peak omega angle in a rocking curve measured at the center of the upper surface,
wherein the first direction is a [1-100] direction and a direction passing through the center of the upper surface.
14. The method according to claim 13 , wherein the manufacturing of the silicon carbide ingot comprises:
preparing a holder having thermally conductive anisotropy;
attaching a seed crystal to the holder; and
depositing silicon carbide on the seed crystal, and
in the attachment of the seed crystal to the holder, the seed crystal is attached to the holder so that a direction in which thermal conductivity is 100 W/mK or more, among directions horizontally passing through a center of the holder, and a [1-100] direction of the seed crystal correspond to each other.