Methods and Systems for Feedback Control in Plasma Processing Using Radical Sensing

1 . An apparatus for feedback control in plasma processing systems using radical sensing, comprising:

at least one process gas supply system configured to output at least one process gas;

at least one plasma source configured to receive the at least one process gas and generate at least one radical flow;

at least one process chamber in communication with the at least one plasma source,

wherein the process chamber receives the at least one radical flow and directs at least a portion of the at least one radical flow to one or more devices,

the process chamber configured to output at least one process chamber output;

at least one gas analyzer in communication with and configured to sample at least one of the at least one process gas, at least one radical flow, at least one radical flow within the at least one process chamber, and the at least one process chamber output; and

at least one controller in communication with at least one of the process gas supply system, at least one plasma source, and at least one process chamber,

the controller configured to generate at least one control signal based on data from the at least one gas analyzer and selectively control at least one of the process gas supply system, at least one plasma source, and at least one process chamber.

2 . The apparatus of claim 1 , wherein, during use, said at least one plasma source is configured to generate low-energy ions and atomic radicals in said at least one radical flow, directed into said one or more process chambers.

3 . The apparatus of claim 1 , wherein said at least one process chamber is configured to have said one or more substrates or devices positioned therein to be plasma processed.

4 . The apparatus of claim 1 , wherein said at least one gas analyzer further comprising at least one of a mass spectrometer and a special residual gas analyzer.

5 . The apparatus of claim 1 , wherein said at least one controller comprising a mass flow controller, and another flow control device.

6 . The apparatus of claim 1 , wherein said at least one controller, during use, capable of continuously adjusting one or more operational parameters of the apparatus based on gas analyzer data received from the at least one gas analyzer sampling, in real-time, the radical gas flow from said plasma source.

7 . A method, comprising:

selecting a reactor configuration;

determining a radical sensing unit to be employed;

determining a reaction rate target;

setting a radical concentration target;

determining a preset flow of other reactants;

flowing one or more process gases into at least one plasma source by initiating at least one plasma reaction;

measuring a radical concentration using the radical sensing unit; and

measuring a reaction rate.

8 . The method of claim 7 , wherein selecting a reactor configuration comprises selecting of any one or a combination of a plurality of processing gases to be used by said reactor, a plurality of materials to be applied on said reactor, a wafer size to be housed by said reactor, a plurality of dimensions for the reactor, and a type of a remote plasma source for said reactor.

9 . The method of claim 7 , wherein said radical sensing unit comprising at least one of a mass spectrometry system, and a special residual gas analyzer.

10 . The method of claim 7 , wherein said reaction rate targets comprising a target deposition rate, a target process time, an etch rate, and a surface modification treatment rate.

11 . The method of claim 7 , wherein setting a radical concentration target is impacted by at least an initial dose of any gases included in a plasma chamber, and

wherein said dose being dependent upon at least one of disassociation rate by pressure, flow rate, power, and thermal management variables.

12 . The method of claim 7 , wherein said process gases comprising at least one of O2, N2, H2, NH3, NF3, F2, Cl2, AsH3, BCl3. Br2, CF4, C2F6, C3F8, C4F8, C5F8, CHF3, HBr HCl, HF, N2O, PH3, SiF4, SiH4, SF6.

13 . The method of claim 7 , wherein said reaction rate may be measured by at least a laser interferometer capable of examining an etch rate, a deposition rate, and a surface modification treatment rate.

14 . The method of claim 7 , further comprising optimizing a performance of an apparatus for the feedback control by repeating the steps of claim 7 .

15 . The method of claim 7 , further comprising adjusting at least one of or a combination of a gas flow rate, power, cooling characteristics prior to providing the gas for plasma reaction.

17 . The method of claim 7 , further comprising adjusting at least one of or a combination of a flow rate, and gas mix ratio prior to providing the precursor gas for plasma reaction.