Device stack with novel gate capacitor topology
Systems, methods and apparatus for practical realization of an integrated circuit comprising a stack of transistors operating as an RF amplifier are described. As stack height is increased, capacitance values of gate capacitors used to provide a desired distribution of an RF voltage at the output of the amplifier across the stack may decrease to values approaching parasitic/stray capacitance values present in the integrated circuit which may render the practical realization of the integrated circuit difficult. Coupling of an RF gate voltage at the gate of one transistor of the stack to a gate of a different transistor of the stack can allow for an increase in the capacitance value of the gate capacitor of the different transistor for obtaining an RF voltage at the gate of the different transistor according to the desired distribution.
1. A radio frequency (RF) amplifier, comprising:
an input transistor and a plurality of transistors in series connection; and
a first capacitor connected,
at a first terminal of the first capacitor, to a gate of a first transistor of the plurality of transistors, and
at a second terminal of the first capacitor, to a gate of a second transistor of the plurality of transistors,
wherein the first capacitor is configured to couple an RF voltage at the gate of the second transistor to the gate of the first transistor and add the RF voltage at the gate of the second transistor to an RF voltage coupled to the gate of the first transistor through a parasitic gate capacitance of the first transistor.
2. The radio frequency (RF) amplifier according to claim 1 , wherein:
the first capacitor is configured to increase an RF voltage amplitude at the gate of the first transistor.
3. A radio frequency (RF) amplifier, comprising:
an input transistor and a plurality of transistors in series connection; and
a first capacitor directly connected,
at a first terminal of the first capacitor, to a gate of a first transistor of the plurality of transistors, and
at a second terminal of the first capacitor, to a gate of a second transistor of the plurality of transistors,
wherein the first capacitor is configured to add an RF voltage at the gate of the second transistor to an RF voltage coupled to the gate of the first transistor through a parasitic gate capacitance of the first transistor.
4. The radio frequency (RF) amplifier according to claim 1 , wherein:
the first capacitor is further configured to control an RF voltage amplitude at the gate of the first transistor.
5. The radio frequency (RF) amplifier according to claim 1 , wherein:
a source of the first transistor is connected to a drain of the second transistor.
6. The radio frequency (RF) amplifier according to claim 1 , wherein:
a source of the first transistor is connected to a drain of a transistor of the plurality of transistors different from the second transistor.
7. The radio frequency (RF) amplifier according to claim 1 , further comprising:
a second capacitor connected
at a first terminal of the second capacitor, to the gate of the second transistor, and
at a second terminal of the second capacitor, to a reference voltage.
8. The radio frequency (RF) amplifier according to claim 1 , further comprising:
a second capacitor connected
at a first terminal of the second capacitor, to the gate of the second transistor, and
at a second terminal of the second capacitor, to a gate of a third transistor of the plurality of transistors,
wherein the second capacitor is configured to couple an RF voltage at the gate of the third transistor to the gate of the second transistor.
9. The radio frequency (RF) amplifier according to claim 8 , further comprising:
a third capacitor connected
at a first terminal of the third capacitor, to the gate of the third transistor, and
at a second terminal of the third capacitor, to a reference voltage.
10. The radio frequency (RF) amplifier according to claim 8 , wherein:
a source of the first transistor is connected to a drain of the second transistor, and
a source of the second transistor is connected to a drain of a fourth transistor of the plurality of transistors different from the third transistor.
11. The radio frequency (RF) amplifier according to claim 8 , wherein:
a source of the first transistor is connected to a drain of a fourth transistor of the plurality of transistors different from the second transistor, and
a source of the second transistor is connected to a drain of the third transistor.
12. The radio frequency (RF) amplifier according to claim 9 , wherein:
the first, second and third capacitors are further configured to control respective RF voltage amplitudes at sources of the first, second and third transistors based on a desired distribution across the input transistor and the plurality of transistors of an RF voltage output by the RF amplifier.
13. The radio frequency (RF) amplifier according to claim 12 , wherein:
the desired distribution of the RF voltage is configured to provide a substantially equal division of the RF voltage across the input transistor and the plurality of transistors.
14. The radio frequency (RF) amplifier according to claim 12 , wherein:
the desired distribution of the RF voltage is configured to provide an unequal division of the RF voltage across the input transistor and the plurality of transistors.
15. The radio frequency (RF) amplifier according to claim 1 , wherein:
the input transistor and the plurality of transistors are metal-oxide-semiconductor (MOS) field effect transistors (FETs), or complementary metal-oxide-semiconductor (CMOS) field effect transistors (FETs).
16. The radio frequency (RF) amplifier according to claim 15 , wherein:
the input transistor and the plurality of transistors are fabricated using one of: a) silicon-on-insulator (SOI) technology, and b) silicon-on-sapphire technology (SOS).
17. The radio frequency (RF) amplifier according to claim 1 , wherein:
the first transistor is an output transistor of the RF amplifier.
18. An electronic module comprising the RF amplifier according to claim 1 .
19. A handheld cellular phone comprising the electronic module of claim 18 .
20. A method for manufacturing a radio frequency (RF) amplifier, the method comprising:
providing a substrate comprising one of: a) silicon-on-insulator substrate, or b) a silicon-on-sapphire substrate;
manufacturing, on the substrate, a transistor stack comprising an input transistor in series connection with a plurality of transistors;
manufacturing on the substrate, a first capacitor;
connecting, a first terminal of the first capacitor to a gate of a first transistor of the plurality of transistors; and
connecting, a second terminal of the first capacitor to a gate of a second transistor of the plurality of transistors,
wherein during operation of the RF amplifier, the first capacitor is configured to couple an RF voltage at the gate of the second transistor to the gate of the first transistor and add the RF voltage at the gate of the second transistor to an RF voltage coupled to the gate of the first transistor through a parasitic gate capacitance of the first transistor.