Red flip chip light emitting diode, package, and method of making the same
Flip chip LEDs comprise a transparent carrier and an active material layer such as AlInGaP bonded to the carrier and that emits light between about 550 to 650 nm. The flip chip LED has a first electrical terminal in contact with a first region of the active material layer, and a second electrical terminal in contact with a second region of the active material layer, wherein the first and second electrical terminals are positioned along a common surface of the active material layer. Chip-on-board LED packages comprise a plurality of the flip chip LEDs with respective first and second electrical terminals interconnected with one another. The package may include Flip chip LEDs that emit light between 420 to 500 nm, and the flip chip LEDs are covered with a phosphorus material comprising a yellow constituent, and may comprise a transparent material disposed over the phosphorus material.
1. A flip chip light emitting diode comprising:
an active material layer having a first surface bonded to a transparent carrier, the active material layer comprising a first region and a second region, the first region being at a depth of the active material layer different than the second region;
first and second electrical terminals extending from a second surface of the active material layer opposite the first surface, the first electrical terminal in contact with the first region, and the second electrical terminal in contact with the second region; and
an insulating material interposed between the first electrical terminal and the second region, wherein the second electrical terminal is free from an entirety of the insulating material and from contacting any insulating material of the flip chip light emitting diode.
2. The flip chip light emitting diode of claim 1 , wherein the second region extends from the second surface a partial depth into the active material layer.
3. The flip chip light emitting diode of claim 1 , wherein the first region extends from the first surface a partial depth into the active material layer.
4. The flip chip light emitting diode of claim 1 , wherein the carrier is formed from a material transparent to light emitted by the active material layer.
5. The flip chip light emitting diode of claim 1 , wherein a portion of the second surface is exposed between the first and second electrical terminals.
6. The flip chip light emitting diode of claim 1 , wherein the second terminal is in direct contact with the second surface.
7. The flip chip light emitting diode of claim 1 , wherein the active material layer emits light in a wavelength range of about 550 to 650 nm.
8. A chip-on-board package comprising two flip chip light emitting diodes of claim 1 , wherein a first flip chip light emitting diode emits light in a first wavelength range and a second flip chip light emitting diode emits light in a second wavelength range different than the first wavelength range.
9. A flip chip light emitting diode comprising:
an active material layer having a first surface bonded to a transparent carrier, the active material layer comprising a first region and a second region, the first region being at a depth of the active material layer different than the second region;
first and second electrical terminals extending from a second surface of the active material layer opposite the first surface, the first electrical terminal in contact with the first region, and the second electrical terminal in contact with the second region, wherein at least one of the first electrical terminal and second electrical terminal is in direct contact with the respective first and second regions; and
an insulating material interposed between the first electrical terminal and the second region, wherein at least one of the first and second electrical terminal is entirely free and does not contact the insulating material or any insulating material of the flip chip light emitting diode.
10. A flip chip light emitting diode comprising:
an active material layer having a first surface bonded to a transparent carrier, the active material layer comprising a first region and a second region, the first region being at a depth of the active material layer different than the second region;
first and second electrical terminals extending from a second surface of the active material layer opposite the first surface, the first electrical terminal in contact with the first region, and the second electrical terminal in contact with the second region; and
an insulating material interposed between the first electrical terminal and the second region, wherein a portion of the second surface between the first and second electrical terminals is exposed and free of the insulating material, and wherein the second electrical terminal is entirely free of the insulating material and does not contact any insulating material of the flip chip light emitting diode.