EUV photo masks and manufacturing method thereof
View Patent ↗A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The intermediate layer includes a material having a lower hydrogen diffusivity than a material of the capping layer.
1. A reflective mask, comprising:
a substrate;
a reflective multilayer disposed on the substrate;
a barrier layer;
a capping layer disposed over the barrier layer;
an intermediate layer disposed over the capping layer; and
an absorber layer disposed over the intermediate layer,
wherein the intermediate layer includes a material having a lower hydrogen diffusivity than a material of the capping layer.
2. The reflective mask of claim 1 , wherein the intermediate layer includes tantalum oxide.
3. The reflective mask of claim 1 , wherein a thickness of the intermediate layer is in a range from 0.5 nm to 3 nm.
4. The reflective mask of claim 1 , wherein the intermediate layer includes ruthenium oxide, niobium oxide, or molybdenum oxide.
5. The reflective mask of claim 1 , further comprising an opening pattern formed in the absorber layer,
wherein the intermediate layer is exposed at a bottom of the opening pattern.
6. The reflective mask of claim 1 , wherein the barrier layer includes one or more of SiON or SiN.
7. The reflective mask of claim 1 , wherein the barrier layer is made of Mo.
8. The reflective mask of claim 1 , wherein:
the reflective multilayer includes Si layers and Mo layers alternately stacked, and
a Si layer of the reflective multilayer is in contact with the barrier layer.
9. A reflective mask, comprising:
a substrate;
a reflective multilayer disposed on the substrate;
a barrier layer disposed on the reflective multilayer;
a capping layer disposed on the barrier layer; and
an absorber layer disposed on the capping layer;
wherein the barrier layer includes one or more of SiON or SiN.
10. The reflective mask of claim 9 , wherein a thickness of the barrier layer is in a range from 0.5 nm to 5 nm.
11. The reflective mask of claim 9 , further comprising an intermediate layer between the capping layer and the absorber layer.
12. The reflective mask of claim 11 , wherein the intermediate layer includes at least one of tantalum oxide, niobium oxide, or ruthenium oxide.
13. The reflective mask of claim 11 , wherein the intermediate layer includes at least one of titanium oxide (TiO 2 ), tin oxide (SnO), zinc oxide (ZnO) or cadmium sulfide (CdS).
14. The reflective mask of claim 9 , wherein:
the reflective multilayer includes Si layers and Mo layers alternately stacked, and
a Si layer of the reflective multilayer is in contact with the barrier layer.
15. The reflective mask of claim 9 , wherein:
the reflective multilayer includes Si layers and Mo layers alternately stacked, and
a Mo layer of the reflective multilayer is in contact with the barrier layer.
16. A reflective mask, comprising:
a substrate;
a reflective multilayer disposed over the substrate;
a capping layer disposed over the reflective multilayer;
an absorber layer disposed over the capping layer; and
a cover layer disposed over the absorber layer, wherein:
the reflective multilayer includes Si layers and Mo layers alternately stacked, and
an uppermost Si layer of the reflective multilayer is not in contact with the capping layer.
17. The reflective mask of claim 16 , wherein the cover layer is made of tantalum oxide.
18. The reflective mask of claim 16 , wherein a silicon compound layer is disposed between the reflective multilayer and the capping layer.
19. The reflective mask of claim 16 , wherein an uppermost Mo layer of the reflective multilayer is not in contact with the capping layer.
20. The reflective mask of claim 16 , wherein the capping layer is made of at least one of RuNb, RuZr, RuZrN, RuRh, RuNbN, RuRhN, RuV or RuVN.