IP Library › Granted Patent US 12,578,573
Granted Patent B2
US 12,578,573 · App. 17/994,127 · Granted Mar 17, 2026

System and method designing metalens

Inventors: Ho Young Ahn (Suwon-si, KR); Hyeon Soo Park (Suwon-si, KR); Seong Woon Booh (Suwon-si, KR); Kyu Il Lee (Incheon, KR); Mun Bo Shim (Yongin-si, KR); Seung Hoon Han (Seoul, KR)
Assignee: Samsung Electronics Co., Ltd.
G02B27/0012
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Quick Facts
Patent No.
US 12,578,573
App. No.
17/994,127
Granted
Mar 17, 2026
Kind
B2
Abstract

A system and method designing a metalens including nanostructures and a spacer layer between the nanostructures. The method includes; selecting a design area in relation to a width of the nanostructure and a pitch of the nanostructure, setting a search route in the design area in a direction in which a phase decreases, calculating transmittance at a reference point on the search route and change points near the reference point along the search route, determining the width of the nanostructure and the pitch of the nanostructure, generating a phase map corresponding to the width of the nanostructure and the pitch of the nanostructure, extracting an extracted width of the nanostructure and an extracted pitch of the nanostructure having a target phase from the phase map, and placing the nanostructure having the extracted width and extracted pitch in relation to the metalens corresponding to the target phase.

Claims (51)

1 . A metalens design system comprising:

a memory storing a design tool; and

a processor configured to execute the design tool to design a metalens including nanostructures and a spacer layer between the nanostructures,

wherein the design tool is configured to:

select, from an available range of widths of a nanostructure and pitches of the nanostructure, a design range of the widths of the nanostructure and the pitches of the nanostructure;

set a search route in the design range using a phase contour corresponding to the widths of the nanostructure and the pitches of the nanostructure;

generate a phase map indicating a selected portion of the design range;

based on the phase map, determine a target width of the nanostructure and a target pitch of the nanostructure that provide a target phase corresponding to a distance from a center point of the metalens; and

place the nanostructure having the target width and the target pitch at a position of the metalens corresponding to the target phase.

2 . The metalens design system of claim 1 , wherein the design tool is configured to set the search route in the design range in a direction providing a 2π decrease in phase.

3 . The metalens design system of claim 2 , wherein the design tool is configured to:

divide the metalens into a plurality of areas satisfying a phase range condition using the target phase corresponding to the distance from the center point of the metalens; and

generate the phase map for at least one of the plurality of areas,

wherein the phase range condition provides for a 2π phase decrease from a maximum phase value for each of the plurality of areas in relation to the distance from the center point of the metalens.

4 . The metalens design system of claim 3 , wherein the design tool is configured to:

design a first nanostructure design for a first area among the plurality of areas based on the phase map and the target phase corresponding to the distance from the center point of the metalens; and then,

design a second nanostructure design for a second area among the plurality of areas based on the first nanostructure design.

5 . The metalens design system of claim 3 , wherein the plurality of areas includes a first area having a circular shape and including the center point of the metalens, a second area having an annular shape surrounding the first area.

6 . The metalens design system of claim 1 , wherein the design range includes a transmittance reduction range in which transmittance satisfies a set condition, and

wherein the design tool is configured to set the search route such that the search route does not pass through the transmittance reduction range.

7 . The metalens design system of claim 1 , wherein the design tool is configured to:

calculate transmittances of light passing through the metalens along the search route as a function of the widths of the nanostructure and the pitches of the nanostructure; and

generate the phase map based on the transmittances.

8 . The metalens design system of claim 1 , wherein the target phase corresponding to the distance from the center point of the metalens has an offset.

9 . The metalens design system of claim 8 , wherein the design tool is configured to set a plurality of search routes based on the offset.

10 . The metalens design system of claim 1 , wherein the nanostructure has a columnar shape.

11 . The metalens design system of claim 1 , wherein the spacer layer includes a through-hole, and the nanostructure fills the through-hole.

12 . The metalens design system of claim 11 , wherein a shape of the nanostructure is a cylindrical column or a polygonal column.

13 . A method of designing a metalens including nanostructures and a spacer layer between the nanostructures, the method comprising:

selecting a design range of widths of a nanostructure and pitches of the nanostructure;

setting a search route in the design range in a direction in which a phase decreases;

calculating transmittances at a reference point on the search route and at change points near the reference point;

based on the transmittances, generating a phase map indicating a selected portion of the design range;

based on the phase map, determining a target width and a target pitch that provide a target phase; and

placing the nanostructure having the target width and the target pitch.

14 . The method of claim 13 , wherein the setting of the search route in the design range in the direction in which the phase decreases provides for a 2π decrease in phase.

15 . The method of claim 13 , wherein the change points include a first change point changed by a set pitch from the reference point, and a second change point changed by a set width from the reference point.

16 . The method of claim 15 , wherein the change points further include a third point changed by the set pitch and the set width from the reference point.

17 . The method of claim 15 , wherein the change points further include a third point changed by the set pitch from the reference point and having a same phase as the reference point.

18 . A method of designing a metalens including a nanostructure and a spacer layer, the method comprising:

determining a material of the nanostructure, a material of the spacer layer, and a height of the nanostructure;

selecting, from an available range of widths of the nanostructure and pitches of the nanostructure, a design range of the widths of the nanostructure and the pitches of the nanostructure;

setting a search route in the design range in a direction providing a 2π phase decrease from a maximum phase value in the design range using a phase contour corresponding to the widths of the nanostructure and the pitches of the nanostructure;

generating a phase map indicating a selected portion of the design range;

based on the phase map, determining a target width of the nanostructure and a target pitch of the nanostructure that provide a target phase corresponding to a distance from a center point of the metalens; and

placing the nanostructure having the target width and the target pitch at a position of the metalens corresponding to the target phase.

19 . The method of claim 18 , further comprising:

determining the height of the nanostructure after determining the material of the nanostructure and the material of the spacer layer.

20 . The method of claim 18 , wherein the metalens includes a first layer and a second layer disposed on the first layer,

the nanostructure includes a first nanostructure associated with the first layer and a second nanostructure associated with the second layer, and

the spacer layer includes a first spacer layer associated with the first layer and a second spacer layer associated with the second layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 26, 2022
From: AHN, HO YOUNG; PARK, HYEON SOO; BOOH, SEONG WOON; LEE, KYU IL; SHIM, MUN BO; HAN, SEUNG HOON
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 061883/0078 →
Priority Claims (2)
KR 10-2021-0170996 · Dec 2, 2021 · national
KR 10-2022-0012871 · Jan 28, 2022 · national
Continuity (1)
Related Publication 20230176366A1 · Jun 8, 2023
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