Conductive paste composition, preparation method and use thereof, crystalline silicon solar cell
View Patent ↗A conductive paste composition, a preparation method and a use thereof, as well as a crystalline silicon solar cell are disclosed. The conductive paste composition contains a silver powder and an aluminum powder, and contains a lead-boron-selenium glass frit or a bismuth-boron-selenium glass frit. The conductive paste composition can perform effective etching of a passivation film of an n-type crystalline silicon solar cell during a high temperature firing, and also does not over-oxidize the aluminum powder contained therein, thereby forming an electrode having decent electrical contact with a p-type doped emitter.
1. A conductive paste composition, comprising:
a lead-boron-selenium glass frit accounting for 0.5 wt % to 10 wt % of a total solid in the conductive paste composition; wherein based on a total weight of a dry weight of the lead-boron-selenium glass frit, the lead-boron-selenium glass frit at least contains lead-boron-selenium oxides with 51 wt % to 82 wt % of PbO, 4 wt % to 20 wt % of B 2 O 3 , and 1 wt % to 16 wt % of SeO 2 ; the lead-boron-selenium oxides contained in the lead-boron-selenium glass frit are completely amorphous; or a first part of the lead-boron-selenium oxides contained in the lead-boron-selenium glass frit is amorphous, and a second part of the lead-boron-selenium oxides is crystalline, a content of the second part in the lead-boron-selenium glass frit accounts for less than 1.5% of a total weight of lead-boron-selenium oxides;
a conductive component accounting for 87 wt % to 99 wt % of the total solid;
an aluminum elemental component accounting for 0.5 wt % to 3 wt % of the total solid; and
an organic medium.
2. The conductive paste composition according to claim 1 , wherein based on the total weight of the dry weight of the lead-boron-selenium glass frit, the lead-boron-selenium glass frit further contains 0.1 wt % to 25 wt % of additives selected from any one or more of the group consisting of PbF 2 , SiO 2 , Bi 2 O 3 , BiF 3 , AgO 2 , Ag 2 O, AgO, ZnO, MgO, CaO, Al 2 O 3 , Li 2 O, Na 2 O, K 2 O, Rb 2 O, Ce 2 O, and Fe 2 O 3 .
3. The conductive paste composition according to claim 1 , wherein based on the total weight of the dry weight of the lead-boron-selenium glass frit, a content of SeO 2 in the lead-boron-selenium glass frit ranges from 2 wt % to 10 wt %.
4. The conductive paste composition according to claim 1 , wherein based on the total weight of the dry weight of the lead-boron-selenium glass frit, the lead-boron-selenium glass frit contains no more than 1.2 wt % of TeO 2 , or does not contain any form of tellurium.
5. The conductive paste composition according to claim 1 , wherein the conductive component is selected from a mixture of any one or more of silver element, silver alloy, and silver salt.
6. The conductive paste composition according to claim 1 in use of an n-type crystalline silicon solar cell, wherein the conductive paste composition etches and fires through the passivation film of the n-type crystalline silicon solar cell, and a conductive structure electrically contacting a p-type doped emitter of the n-type crystalline silicon solar cell is formed.
7. An n-type crystalline silicon solar cell electrode, comprising:
a semiconductor substrate having an n-type crystalline silicon substrate, a p-type doped emitter disposed on the surface of the n-type crystalline silicon substrate, and at least one passivation film deposited on the surface of the p-type doped emitter; and
a conductive structure that fires through at least a portion of the passivation film and forms an electrical contact with the p-type doped emitter, wherein the conductive structure is formed of the conductive paste composition according to claim 1 .
8. The n-type crystalline silicon solar cell electrode according to claim 7 , wherein the n-type crystalline silicon solar cell electrode is an n-PERT solar cell electrode or an n-TOPCon solar cell electrode.
9. A conductive paste composition, comprising:
a bismuth-boron-selenium glass frit accounting for 0.5 wt % to 10 wt % of a total solid in the conductive paste composition; wherein based on a total weight of a dry weight of the bismuth-boron-selenium glass frit, the bismuth-boron-selenium glass frit at least contains bismuth-boron-selenium oxides with 50 wt % to 90 wt % of Bi 2 O 3 , 2 wt % to 35 wt % of B 2 O 3 , and 0.1 wt % to 15 wt % of SeO 2 ; the bismuth-boron-selenium oxides contained in the bismuth-boron-selenium glass frit are completely amorphous; or a first part of the bismuth-boron-selenium oxides contained in the bismuth-boron-selenium glass frit is amorphous, and a second part of the bismuth-boron-selenium oxides is crystalline,
a content of the second part in the bismuth-boron-selenium glass frit accounts for less than 1.5% of a total weight of bismuth-boron-selenium oxides;
a conductive component accounting for 87 wt % to 99 wt % of the total solid;
an aluminum elemental component accounting for 0.5 wt % to 3 wt % of the total solid; and
an organic medium.
10. The conductive paste composition according to claim 9 , wherein the conductive component is selected from a mixture of any one or more of silver element, silver alloy, and silver salt.
11. The conductive paste composition according to claim 9 , wherein based on the total weight of the dry weight of the bismuth-boron-selenium glass frit, a content of SeO 2 in the bismuth-boron-selenium glass frit ranges from 2 wt % to 12 wt %.
12. The conductive paste composition according to claim 9 , wherein based on the total weight of the dry weight of the bismuth-boron-selenium glass frit, a content of Li 2 O in the bismuth-boron-selenium glass frit ranges from 0.1 wt % to 5 wt %; and/or Based on the total weight of the dry weight of the bismuth-boron-selenium glass frit, a content of Na 2 O in the bismuth-boron-selenium glass frit ranges from 0.1 wt % to 5 wt %; and/or
based on the total weight of the dry weight of the bismuth-boron-selenium glass frit, a content of ZnO in the bismuth-boron-selenium glass frit ranges from 0.1 wt % to 20 wt %.
13. The conductive paste composition according to claim 12 , wherein based on the total weight of the dry weight of the bismuth-boron-selenium glass frit, the bismuth-boron- selenium frit further contains 0.1 wt % to 25 wt % of additives selected from any one or more of the group consisting of SiO 2 , BiF 3 , AgO 2 , Ag 2 O, AgO, ZnO, MgO, CaO, Al 2 O 3 , Li 2 O, Na 2 O, K 2 O, Rb 2 O, Ce 2 O, and Fe 2 O 3 .
14. The conductive paste composition according to claim 9 , wherein based on the total weight of the dry weight of the bismuth-boron-selenium glass frit, the bismuth-boron- selenium glass frit contains no more than 1.2 wt % of TeO 2 , or does not contain any form of tellurium.
15. The conductive paste composition according to claim 9 , in use of an n-type crystalline silicon solar cell, wherein the conductive paste composition etches and fires through the passivation film of the n-type crystalline silicon solar cell, and a conductive structure electrically contacting a p-type doped emitter of the n-type crystalline silicon solar cell is formed.
16. An n-type crystalline silicon solar cell electrode, comprising:
a semiconductor substrate having an n-type crystalline silicon substrate, a p-type doped emitter disposed on the surface of the n-type crystalline silicon substrate, and at least one passivation film deposited on the surface of the p-type doped emitter; and
a conductive structure that fires through at least a portion of the passivation film and forms an electrical contact with the p-type doped emitter, wherein the conductive structure is formed of the conductive paste composition according to claim 9 .
17. The n-type crystalline silicon solar cell electrode according to claim 16 , wherein the n-type crystalline silicon solar cell electrode is an n-PERT solar cell electrode or an n-TOPCon solar cell electrode.