SEMICONDUCTOR DEVICE AND POWER CONVERTER
The semiconductor device configures a cascode-type high voltage element comprising a plurality of low voltage elements connected in series, wherein the number of stages of connected low voltage elements is reduced, and the high voltage element has desired withstand voltage, without limiting the withstand voltage of the gate oxide film of the low voltage elements. The semiconductor device comprises a first semiconductor element and one or more second semiconductor elements connected in series, wherein the first and the second semiconductor elements have a control signal output terminal between a source terminal and a drain terminal or between an emitter terminal and a collector terminal; and a gate terminal of the one or more second semiconductor elements is connected to the control signal output terminal of the first or second semiconductor element connected in series adjacently to the source or emitter side of said one or more second semiconductor elements.
1 . A semiconductor device in which a first semiconductor element and one or a plurality of second semiconductor elements are connected in series, wherein
the first semiconductor element and the second semiconductor element each has a control signal output terminal between a source terminal and a drain terminal or between an emitter terminal and a collector terminal, and
a gate terminal of the second semiconductor element is connected to the control signal output terminal of the first semiconductor element or the second semiconductor element connected in series adjacent to a source or emitter side of the second semiconductor element.
2 . The semiconductor device according to claim 1 , wherein
a gate terminal and a source terminal of the first semiconductor element are connected to a gate drive circuit, and
ON/OFF control of all semiconductor elements of the first semiconductor element and the second semiconductor element is enabled by a drive signal from the gate drive circuit to the gate terminal of the first semiconductor element.
3 . The semiconductor device according to claim 1 , wherein
the second semiconductor element is a depletion-type semiconductor element in which a threshold of a gate voltage is a negative voltage.
4 . The semiconductor device according to claim 3 , wherein
the first semiconductor element and the second semiconductor element are lateral MO SFETs.
5 . The semiconductor device according to claim 3 , wherein
at least one of the first semiconductor element and the second semiconductor element includes a lateral IGBT and a diode connected in antiparallel to the lateral IGBT.
6 . The semiconductor device according to claim 3 , wherein
at least one of the first semiconductor element and the second semiconductor element is an HEMT.
7 . The semiconductor device according to claim 6 , wherein
at least one of the first semiconductor element and the second semiconductor element includes an HEMT and a diode connected in antiparallel to the HEMT.
8 . The semiconductor device according to claim 1 , wherein
a resistor is connected in parallel to at least one of the first semiconductor element and the second semiconductor element.
9 . The semiconductor device according to claim 1 , wherein
a diode is connected between a drain terminal or a collector terminal and the control signal output terminal of each of the first semiconductor element and the second semiconductor element.
10 . The semiconductor device according to claim 9 , wherein
the diode is an avalanche diode or a Zener diode.
11 . A power converter using the semiconductor device according to claim 1 .