Low-dropout regulator for low voltage applications
A low-dropout regulator for low voltage applications includes a buffer circuit being arranged between an output terminal of an error amplifier and a control node of a pass device. The buffer circuit includes a driver having a first transistor being embodied as an NMOS transistor. The output terminal of the error amplifier is coupled to the control node of the first transistor. The control node of the pass device is coupled to an internal node of a first current path including the first transistor. The low-dropout regulator has high load capability, even if an input supply voltage is very low.
1. A low-dropout regulator for low voltage applications, comprising:
an input supply terminal to provide an input supply voltage,
a reference supply terminal to provide a reference supply voltage,
an error amplifier having a first and second input terminal and an output terminal,
a pass device having a control node to control a conductivity of the pass device,
a buffer circuit being arranged between the output terminal of the error amplifier and the control node of the pass device,
wherein the buffer circuit comprises a first current path being arranged between the input supply terminal and the reference supply terminal, wherein the first current path includes a driver comprising a first transistor having a control node to control a conductivity of the first transistor, the first transistor being embodied as an NMOS transistor,
wherein the output terminal of the error amplifier is coupled to the control node of the first transistor,
wherein the control node of the pass device is coupled to a first internal node of the first current path located between the first transistor and the reference supply terminal,
wherein the first current path comprises a current source being arranged in the first current path between the power supply terminal and the first transistor,
wherein the current source is driven by band gap voltage,
wherein the current source is a p-type channel, and
wherein the first transistor is an n-type channel.
2. The low-dropout regulator of claim 1 ,
wherein the first transistor has a drain node being coupled to the input supply terminal, and a source node being coupled to the first internal node of the first current path.
3. The low-dropout regulator of claim 1 ,
wherein the first transistor is configured as a source follower transistor.
4. The low-dropout regulator of claim 1 ,
wherein the first transistor is configured as a NMOS transistor.
5. The low-dropout regulator of claim 1 ,
wherein the buffer circuit comprises a second transistor being arranged between the power supply terminal and the first internal node of the first current path.
6. The low-dropout regulator of claim 5 ,
wherein the second transistor is configured as a PMOS transistor.
7. The low-dropout regulator of claim 5 ,
wherein the second transistor has a source node being coupled to the power supply terminal, and a drain node being coupled to the first internal node of the first current path.
8. The low-dropout regulator of claim 1 ,
wherein a second transistor has a control node being connected to a second internal node of the first current path, the second internal node being arranged between the current source of the first current path and the first transistor.
9. The low-dropout regulator of claim 8 , comprising:
a third transistor being arranged between the power supply terminal and the second internal node of the first current path.
10. The low-dropout regulator of claim 9 ,
wherein the third transistor has a source node being connected to the power supply terminal, and a drain node being connected to the second internal node of the first current path,
wherein the third transistor has a control node to apply a control signal for controlling a conductivity of the third transistor, and
wherein the buffer circuit is configured to generate the control signal for controlling the conductivity of the third transistor in response to an amount of a load current of the low-dropout regulator.
11. The low-dropout regulator of claim 1 ,
wherein the buffer circuit comprises a current mirror being configured to provide a biasing current in the first current path of the buffer circuit,
wherein the buffer circuit comprises a second current path, and
wherein the current mirror is configured to provide the bias current in the first current path in response to a current in the second current path.
12. The low-dropout regulator of claim 11 , comprising:
a fourth transistor,
wherein the second current path comprises a second current source being arranged between the power supply terminal and the current mirror, and
wherein the fourth transistor is arranged between the power supply terminal and a third internal node of the second current path located between the second current source and the current mirror.
13. The low-dropout regulator of claim 1 , comprising:
an output current path including the pass device and an output terminal to provide a regulated output voltage, and
a feedback path including a capacitor being arranged between the output terminal and a third input terminal of the error amplifier.
14. A communication device, comprising:
a low-dropout regulator of claim 1 to provide a regulated output voltage, and
wherein the communication device is embodied as a sensor or a battery-powered device.
15. A low-dropout regulator for low voltage applications, comprising:
an input supply terminal to provide an input supply voltage,
a reference supply terminal to provide a reference supply voltage,
an error amplifier having a first and second input terminal and an output terminal,
a pass device having a control node to control a conductivity of the pass device,
a buffer circuit being arranged between the output terminal of the error amplifier and the control node of the pass device,
wherein the buffer circuit comprises a first current path being arranged between the input supply terminal and the reference supply terminal, wherein the first current path includes a driver comprising a first transistor having a control node to control a conductivity of the first transistor, the first transistor being embodied as an NMOS transistor,
wherein the output terminal of the error amplifier is coupled to the control node of the first transistor,
wherein the control node of the pass device is coupled to a first internal node of the first current path located between the first transistor and the reference supply terminal,
wherein the buffer circuit comprises a current mirror being configured to provide a biasing current in the first current path of the buffer circuit,
wherein the buffer circuit comprises a second current path, and
wherein the current mirror is configured to provide the bias current in the first current path in response to a current in the second current path.
16. The low-dropout regulator of claim 15 , comprising:
a fourth transistor,
wherein the second current path comprises a second current source being arranged between the power supply terminal and the current mirror, and
wherein the fourth transistor is arranged between the power supply terminal and a third internal node of the second current path located between the second current source and the current mirror.