Alkoxide compound, thin-film forming raw material, and method of producing thin-film
A method for producing a thin-film containing a metal atom or a semimetal atom on the surface of a substrate, comprising the steps of vaporizing a thin-film forming raw material comprising an alkoxide compound represented by the following general formula (1), introducing the vaporized compound into a treatment atmosphere, and subjecting the vaporized compound to decomposition and/or a chemical reaction, to thereby form the thin-film containing a metal atom or a semimetal atom on the surface of the substrate: where R 1 to R 6 , M and n are defined herein.
1. A method for producing a thin-film containing a metal atom or a semimetal atom on the surface of a substrate, comprising:
vaporizing a thin-film forming raw material comprising an alkoxide compound;
introducing the vaporized compound, into a treatment atmosphere; and
subjecting the vaporized compound to decomposition and/or a chemical reaction, to thereby form the thin-film containing a metal atom or a semimetal atom on the surface of the substrate,
wherein the alkoxide compound is represented by the following general formula (1):
where R 1 and R 2 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, R 3 and R 4 each independently represent an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, R 5 represents a hydrogen atom, a fluorine atom-containing group, or an alkyl group having 1 to 5 carbon atoms, R 6 represents a fluorine atom-containing group, M represents a metal atom or a semimetal atom, and “n” represents a valence of the atom represented by M, provided that when M represents a copper atom, R 3 and R 4 each independently represent an alkyl group having 1 or 2 carbon atoms, and R 5 represents a hydrogen atom.