Granted Patent B2

US 12,622,095 · App. 18/015,161 · Granted May 5, 2026

Inventors: Daniel Matthesius (Eichwalde, DE); Torsten Trenkler (Berlin, DE); Enrico Pertzsch (Schoenfeld, DE)

Assignee: Jenoptik Optical Systems GmbH

H10H20/01335H01L25/0753H10H20/84H10H20/034

Abstract

Claims (11)

1 . A method for producing an optical apparatus, wherein the method has the following steps:

providing a substrate on whose first main surface a plurality of emission devices for emitting electromagnetic radiation are arranged, wherein the substrate is designed as a light-emitting diode wafer and/or the substrate is formed from sapphire or gallium nitride, and wherein the substrate is transparent at least for one emission wavelength of the radiation emitted by the emission devices;

applying an absorption material on the side of the first main surface of the substrate, wherein the absorption material has a photostructurable resist which absorbs at least the emission wavelength;

processing the absorption material in order to lay bare at least one emission surface of each emission device, wherein a position determination of surfaces to be laid bare is carried out from a second main surface of the substrate opposite the first main surface; and

singulating the substrate into a plurality of optical apparatuses by means of a separating manufacturing process, wherein each optical apparatus has at least one emission device.

2 . The method as claimed in claim 1 , wherein, in the processing step, the absorption material is exposed using a photomask, is developed using a developer material, and is removed at least in the region of the at least one emission surface.

3 . The method as claimed in claim 1 , wherein, in the processing step, the absorption material is processed in order to lay bare electrical connection surfaces of each emission device and/or at least one singulation boundary.

4 . The method as claimed in claim 1 , wherein, in the providing step, a substrate is provided on whose second main surface adjustment marks for the position determination are created, or characterized by a step of creating adjustment marks for the position determination on the second main surface of the substrate.

5 . The method as claimed in claim 1 , wherein, in the providing step, a substrate is provided, whose second main surface is polished, or characterized by a step of polishing the second main surface of the substrate.

6 . The method as claimed in claim 1 , wherein a step of potting side edges of the substrate of each optical apparatus using a potting material after the step of singulating the substrate, wherein the potting material absorbs at least the emission wavelength.

7 . The method as claimed in claim 1 , wherein, in the providing step, a substrate with emission devices is provided, which are manufactured by means of a semiconductor-technological process, or characterized by a step of fabricating the emission devices on the substrate by means of a semiconductor-technological process, wherein in the semiconductor-technological process an n-doped epitaxial layer is arranged on the first main surface of the substrate, an n-contact metal as a first electrical connection surface and an active emission layer are arranged on the n-doped epitaxial layer, the active emission layer is covered with a p-doped epitaxial layer, and a p-contact metal is arranged as a second electrical connection surface on the p-doped epitaxial layer.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (19)