Elimination of waveguide modes in organic light-emitting diodes using an ultrathin transparent conductor
A method of increasing light emission efficiency in an organic light emitting diode (OLED) eliminates or reduces at least one waveguide mode selected from the group consisting of: transverse electric (TE0) mode, transverse magnetic (TM1) mode, and combinations thereof by disposing an ultrathin electrically conductive transparent metallic electrode having a first polarity within the OLED. The OLED has a transparent substrate on which the ultrathin electrically conductive transparent metallic electrode is disposed. It also has an emissive active assembly for generating photons defining first and second opposite sides. A conductive transparent metallic electrode is disposed along the first side. A second transparent electrode having a second polarity opposite to the first polarity disposed adjacent to the second side of emissive active assembly. The methods include increasing an external quantum efficiency of the organic light emitting diode to ≥about 20%. OLEDs with such a design are also contemplated.
1. A method of increasing light emission efficiency in an organic light emitting diode, the method comprising:
eliminating or reducing at least one waveguide mode selected from the group consisting of: transverse electric (TE 0 ) mode, transverse magnetic (TM 1 ) mode, and combinations thereof by disposing an ultrathin electrically conductive transparent electrode having a first polarity within the organic light emitting diode comprising:
a transparent substrate on which the ultrathin electrically conductive transparent electrode is disposed;
an emissive active assembly for generating photons that defines a first side and a second opposite side, wherein the ultrathin electrically conductive transparent electrode is disposed along the first side; and
a second electrode having a second polarity opposite to the first polarity disposed adjacent to the second side of emissive active assembly; and
increasing an external quantum efficiency of the organic light emitting diode to greater than or equal to about 30%.
2. The method of claim 1 , wherein the organic light emitting diode is free of indium tin oxide.
3. The method of claim 1 , wherein the second electrode is a transparent electrode comprising a conductive oxide film or a conductive metallic film.
4. The method of claim 1 , wherein the ultrathin electrically conductive transparent electrode is metallic and comprises silver (Ag).
5. The method of claim 4 , wherein the ultrathin electrically conductive transparent electrode further comprises copper, aluminum (Al), titanium (Ti), nickel (Ni), chromium (Cr), gold (Au), magnesium (Mg), tantalum (Ta), germanium (Ge), Palladium (Pd), or combinations thereof.
6. The method of claim 1 , wherein the ultrathin electrically conductive transparent electrode is metallic and comprises a first layer comprising a first material selected from a group consisting of: copper (Cu), titanium (Ti), nickel (Ni), chromium (Cr), gold (Au), magnesium (Mg), tantalum (Ta), germanium (Ge), palladium (Pd), and combinations thereof and a second layer comprising a second material selected from a group consisting of: silver (Ag), copper (Cu), gold (Au), platinum (Pt), and combinations thereof.
7. The method of claim 1 , wherein the ultrathin electrically conductive transparent electrode has a thickness of less than or equal to about 12 nm.
8. The method of claim 1 , wherein the ultrathin electrically conductive transparent electrode has a thickness of greater than or equal to about 2 nm to less than or equal to about 10 nm.
9. The method of claim 1 , wherein a thickness of the emissive active assembly is greater than or equal to 20 nm.
10. The method of claim 1 , wherein the EQE is greater than or equal to about 40%.
11. The method of claim 1 , wherein the ultrathin electrically conductive transparent electrode is metallic and has a transparency of greater than or equal to about 60% for a portion of an electromagnetic spectrum having a range of predetermined wavelengths.
12. The method of claim 11 , wherein the portion of the electromagnetic spectrum having the range of predetermined wavelengths emitted from the organic light emitting diode displays minimal angle dependence that varies less than or equal to about 20 nm at a viewing angle ranging from about 0° to about 60° with respect to the organic light emitting diode.
13. The method of claim 1 , wherein the emissive active assembly comprises:
an emissive active layer;
a first charge transport layer disposed between the emissive active layer and the ultrathin electrically conductive transparent electrode; and
a second charge transport layer disposed between the emissive active layer and the second electrode.
14. The method of claim 13 , wherein a combined thickness of the emissive active layer, the first charge transport layer, and the second charge transport layer is greater than or equal to 100 nm.
15. A method of increasing light emission efficiency in an organic light emitting diode, the method comprising:
eliminating a transverse electric (TE 0 ) mode and a transverse magnetic (TM 1 ) mode in the organic light emitting diode by disposing an ultrathin electrically conductive transparent metallic electrode having a first polarity within the organic light emitting diode that comprises:
a transparent substrate on which the ultrathin electrically conductive transparent metallic electrode is disposed;
an emissive active assembly for generating photons that defines a first side and a second opposite side, wherein the ultrathin electrically conductive transparent metallic electrode is disposed along the first side;
a second electrode having a second polarity opposite to the first polarity disposed adjacent to the second side of emissive active assembly, wherein the organic light emitting diode is free of indium tin oxide (ITO); and
increasing an external quantum efficiency of the organic light emitting diode to greater than or equal to about 30%.
16. The method of claim 15 , wherein the ultrathin electrically conductive transparent metallic electrode comprises silver (Ag).
17. The method of claim 16 , wherein the ultrathin electrically conductive transparent metallic electrode further comprises a material selected from the group consisting of: copper (Cu), aluminum (Al), titanium (Ti), nickel (Ni), chromium (Cr), gold (Au), magnesium (Mg), tantalum (Ta), germanium (Ge), palladium (Pd), and combinations thereof.
18. The method of claim 15 , wherein the ultrathin electrically conductive transparent metallic electrode comprises a first layer comprising a first material selected from a group consisting of: copper (Cu), titanium (Ti), nickel (Ni), chromium (Cr), gold (Au), magnesium (Mg), tantalum (Ta), germanium (Ge), palladium (Pd), and combinations thereof and a second layer comprising a second material selected from a group consisting of: silver (Ag), copper (Cu), gold (Au), platinum (Pt), and combinations thereof.
19. The method of claim 15 , wherein the ultrathin electrically conductive transparent metallic electrode has a thickness of less than or equal to about 12 nm.
20. The method of claim 15 , wherein the ultrathin electrically conductive transparent metallic electrode has a thickness of greater than or equal to about 2 nm to less than or equal to about 10 nm.
21. The method of claim 15 , wherein the EQE is greater than or equal to about 40%.
22. The method of claim 15 , wherein the emissive active assembly comprises:
an emissive active layer;
a first charge transport layer disposed between the emissive active layer and the ultrathin electrically conductive transparent metallic electrode; and
a second charge transport layer disposed between the emissive active layer and the second electrode.
23. The method of claim 22 , wherein a combined thickness of the emissive active layer, the first charge transport layer, and the second charge transport layer is greater than or equal to 100 nm.
24. An organic light emitting diode device comprising:
a transparent substrate;
an ultrathin electrically conductive transparent metallic electrode having a first layer comprising copper and a second layer comprising silver disposed over the first layer;
an emissive active layer defining a first side and a second opposite side;
a first charge transport layer disposed on the first side between the emissive active layer and the ultrathin electrically conductive transparent metallic electrode;
a second charge transport layer disposed on the second side of the emissive active layer; and
a second electrode having a second polarity opposite to the first polarity disposed adjacent to the second charge transport layer, wherein the organic light emitting diode device is free of a transverse electric (TE 0 ) waveguide mode and has an external quantum efficiency of the organic light emitting diode to greater than or equal to about 30%.
25. The organic light emitting diode device of claim 24 , wherein the second electrode is a transparent electrode comprising a conductive oxide film or a conductive metallic film.
26. The organic light emitting diode device of claim 24 , wherein the second electrode is transparent and comprises a second ultrathin electrically conductive transparent metallic electrode to form a dual-side emitting organic light emitting diode.
27. The organic light emitting diode device of claim 24 , wherein the ultrathin electrically conductive transparent electrode has a transparency of greater than or equal to about 60% for a portion of an electromagnetic spectrum having a range of predetermined wavelengths.
28. The organic light emitting diode device of claim 24 , wherein the ultrathin electrically conductive transparent metallic electrode is adjacent to at least one dielectric layer and forms part of an assembly having an electrode design selected from the group consisting of: dielectric-metal, metal-dielectric, and dielectric-metal-dielectric.
29. The organic light emitting diode device of claim 24 , wherein the organic light emitting diode device is also free of a transverse magnetic (TM 1 ) mode waveguide mode.
30. The organic light emitting diode device of claim 24 , wherein the organic light emitting diode device is free of indium tin oxide (ITO).
31. The organic light emitting diode device of claim 24 , wherein the ultrathin electrically conductive transparent metallic electrode comprises silver (Ag).
32. The organic light emitting diode device of claim 31 , wherein the second layer of the ultrathin electrically conductive transparent metallic electrode further comprises a material selected from the group consisting of: copper (Cu), titanium (Ti), nickel (Ni), chromium (Cr), gold (Au), magnesium (Mg), tantalum (Ta), germanium (Ge), palladium (Pd), and combinations thereof.
33. The organic light emitting diode device of claim 32 , wherein the first layer of the ultrathin electrically conductive transparent metallic electrode consists essentially of copper (Cu) and the second layer consists essentially of silver (Ag).
34. The organic light emitting diode device of claim 24 , wherein the ultrathin electrically conductive transparent metallic electrode has a thickness of less than or equal to about 12 nm.
35. The organic light emitting diode device of claim 24 , wherein the ultrathin electrically conductive transparent metallic electrode has a thickness of greater than or equal to about 2 nm to less than or equal to about 10 nm.
36. The organic light emitting diode device of claim 24 , wherein the EQE is greater than or equal to about 40%.
37. The organic light emitting diode device of claim 24 , wherein ultrathin electrically conductive transparent metallic electrode has a transparency of greater than or equal to about 60% for a portion of an electromagnetic spectrum having a range of predetermined wavelengths and the portion of the electromagnetic spectrum having the range of predetermined wavelengths emitted from the organic light emitting diode displays minimal angle dependence that varies less than or equal to about 80 nm at an incidence angle ranging from about 0° to about 60° with respect to the organic light emitting diode.
38. The organic light emitting diode device of claim 24 , wherein a combined thickness of the emissive active layer, the first charge transport layer, and the second charge transport layer is greater than or equal to 100 nm.
39. The organic light emitting diode device of claim 24 , wherein the transparent substrate comprises at least one light scattering element selected from the group consisting of: an index matched fluid, a microlens, a scatterer-embedded fluid, and combinations thereof.