Gas supplying method using gas distributing unit
Provided is a gas supply method using a gas distribution unit which includes a plurality of gas flow rate control devices installed on a plurality of gas suppling channels, respectively, and is configured to individually control the flow rates of process gases supplied through the respective gas supply channels, and differently adjust the gas supply times and supply order of process gases supplied through the respective gas supplying channels, thereby improving the uniformity in thickness of the deposited thin film across the entire surface area of the substrate.
1 . A gas supplying method using a gas distributing unit which supplies a process gas to a first region corresponding to a central region of a gas diffusion space in a substrate processing device and a second region, a third region, a fourth region and a fifth regions, corresponding to respective edges regions of the gas diffusion space, through a first gas supplying channel, a second gas supplying channel, a third gas supplying channel, a fourth gas supplying channel and a fifth gas supplying channel, the first to fifth gas supplying channel includes a first gas flow rate control device, a second gas flow rate control device, a third gas flow rate control device, a fourth gas flow rate control device and a fifth gas flow rate control device, respectively, the gas supplying method comprising:
a first supplying step of supplying the process gas to the first region through the first gas supplying channel or supplying the process gas to the first to fifth regions through the first to fifth gas supplying channels, respectively; and
a second supplying step of supplying the process gas to the second to fifth regions through the second to fifth gas supplying channels, respectively,
wherein the second supplying step is performed sequentially after the first supplying step, and
wherein the first supplying step is performed during a time corresponding to 40% to 80% of the entire process time.
2 . The gas supplying method of claim 1 , further comprising a third supplying step of supplying the process gas to one or more regions of the second to fifth regions through one or more gas supplying channels of the second to fifth gas supplying channels, respectively.
3 . The gas supplying method of claim 1 , wherein when the process gas is supplied through the first to fifth gas supplying channels, the flow rates of the process gas respectively in first to fifth gas supplying channels are individually controlled through the first to fifth gas flow rate control devices installed on the first to fifth gas supplying channels, respectively, in order to supply the process gases.
4 . The gas supplying method of claim 1 , wherein when the process gases are supplied through the first to fifth gas supplying channels, the supply times of the process gas respectively in first to fifth gas supplying channels are individually controlled through the first to fifth gas flow rate control devices installed on the first to fifth gas supplying channels, respectively, in order to supply the process gases.
5 . A gas supplying method using a gas distributing unit which supplies a process gas to a first region corresponding to a central region of a gas diffusion space in a substrate processing device and a second region, a third region, a fourth region and a fifth regions, corresponding to respective edges regions of the gas diffusion space, through a first gas supplying channel, a second gas supplying channel, a third gas supplying channel, a fourth gas supplying channel and a fifth gas supplying channel, the first to fifth gas supplying channel includes a first gas flow rate control device, a second gas flow rate control device, a third gas flow rate control device, a fourth gas flow rate control device and a fifth gas flow rate control device, respectively, the gas supplying method comprising:
a first supplying step of supplying the process gas to the first region through the first gas supplying channel or supplying the process gas to the first to fifth regions through the first to fifth gas supplying channels, respectively; and
a second supplying step of supplying the process gas to one or more regions of the second to fifth regions through one or more gas supplying channels of the second to fifth gas supplying channels, respectively,
wherein the second supplying step is performed sequentially after the first supplying step, and
wherein the first supplying step is performed during a time corresponding to 40% to 80% of the entire process time.