Granted Patent B2

US 12,733,380 · App. 18/027,221 · Granted Sep 8, 2026

Inventors: Wenqi Liu (Beijing, CN); Zhongyuan Sun (Beijing, CN); Che An (Beijing, CN); Jingkai Ni (Beijing, CN); Qingyu Huang (Beijing, CN); Jinxiang Xue (Beijing, CN); Guangcai Yuan (Beijing, CN); Chunyan Li (Beijing, CN)

Assignee: BOE Technology Group Co., Ltd.

H10K59/8731H10K59/1201H10K59/38H10K2102/351

Abstract

Claims (70)

1 . A display substrate, comprising:

a base;

a light-emitting device layer located on the base, wherein a film layer farthest from the base in the light-emitting device layer is a light extraction layer;

an encapsulation structure located on a side of the light-emitting device layer away from the base,

wherein the encapsulation structure comprises a first inorganic encapsulation layer, an organic encapsulation layer located on a side of the first inorganic encapsulation layer away from the base, and a second inorganic encapsulation layer located on a side of the organic encapsulation layer away from the base; and

the first inorganic encapsulation layer comprises a plurality of sub-film layers, a sub-film layer closest to the light extraction layer is a low-stress inorganic layer, and a stress of the low-stress inorganic layer is less than a stress of the second inorganic encapsulation layer.

2 . The display substrate according to claim 1 , wherein the low-stress inorganic layer closest to the light extraction layer is made of a material comprising silicon oxynitride.

3 . The display substrate according to claim 1 , wherein,

the first inorganic encapsulation layer comprises at least two low-stress inorganic layers, and

respective distances between the at least two low-stress inorganic layers and the light extraction layer are less than respective distances between other sub-film layers except the at least two low-stress inorganic layers in the first inorganic encapsulation layer and the light extraction layer.

4 . The display substrate according to claim 3 , wherein the at least two low-stress inorganic layers comprise:

two silicon oxynitride film layers, and

a silicon nitride film layer located between the two silicon oxynitride film layers.

5 . The display substrate according to claim 1 , wherein,

the plurality of sub-film layers comprise at least one low-stress inorganic layer,

the first inorganic encapsulation layer further comprises a first inorganic material layer located on a side of the at least one low-stress inorganic layer away from the base, and

the first inorganic material layer is made of a material comprising a metal oxide.

6 . The display substrate according to claim 5 , further comprising a color filter layer,

wherein the color filter layer comprises a plurality of color-resists arranged at intervals, and black matrixes respectively located between adjacent color-resists;

the color filter layer further functions as the organic encapsulation layer; and

the first inorganic encapsulation layer further comprises a second inorganic material layer located between the first inorganic material layer and the organic encapsulation layer.

7 . The display substrate according to claim 5 , wherein,

the first inorganic encapsulation layer further comprises a third inorganic material layer located between the first inorganic material layer and the low-stress inorganic layer, and

a compactness of the third inorganic material layer is greater than a compactness of the low-stress inorganic layer.

8 . The display substrate according to claim 1 , further comprising a color filter layer,

wherein the color filter layer comprises a plurality of color-resists arranged at intervals, and black matrixes respectively located between adjacent color-resists; and

the color filter layer further functions as the organic encapsulation layer.

9 . The display substrate according to claim 1 , wherein,

in a direction away from the base, the first inorganic encapsulation layer comprises a first low-stress inorganic layer, a second low-stress inorganic layer, a third low-stress inorganic layer, a third inorganic material layer, a first inorganic material layer and a second inorganic material layer that are stacked in sequence;

the first low-stress inorganic layer and the third low-stress inorganic layer are made of silicon oxynitride;

the second low-stress inorganic layer, the third inorganic material layer and the second inorganic material layer are made of silicon nitride; and

the first inorganic material layer is made of a material comprising a metal oxide.

10 . The display substrate according to claim 9 , wherein,

respective thicknesses of the first low-stress inorganic layer and the third low-stress inorganic layer are less than a thickness of the second low-stress inorganic layer, and

respective thicknesses of the first inorganic material layer and the second inorganic material layer are less than a thickness of the third inorganic material layer.

11 . The display substrate according to claim 1 , further comprising a display region and a binding region located on at least one side of the display region,

wherein the light-emitting device layer and the encapsulation structure are located in a region outside the binding region.

12 . A display panel, comprising a display substrate comprising:

a base;

a light-emitting device layer located on the base, wherein a film layer farthest from the base in the light-emitting device layer is a light extraction layer;

an encapsulation structure located on a side of the light-emitting device layer away from the base,

wherein the encapsulation structure comprises a first inorganic encapsulation layer, an organic encapsulation layer located on a side of the first inorganic encapsulation layer away from the base, and a second inorganic encapsulation layer located on a side of the organic encapsulation layer away from the base; and

the first inorganic encapsulation layer comprises a plurality of sub-film layers, a sub-film layer closest to the light extraction layer is a low-stress inorganic layer, and a stress of the low-stress inorganic layer is less than a stress of the second inorganic encapsulation layer.

13 . A display apparatus, comprising the display panel according to claim 12 .

14 . A method of manufacturing a display substrate, comprising:

preparing a base;

forming a light-emitting device layer on the base, wherein a film layer farthest from the base in the light-emitting device layer is a light extraction layer;

on a side of the light-emitting device layer away from the base, forming a first inorganic encapsulation layer, an organic encapsulation layer located on a side of the first inorganic encapsulation layer away from the base, and a second inorganic encapsulation layer located on a side of the organic encapsulation layer away from the base in sequence,

wherein the first inorganic encapsulation layer comprises a plurality of sub-film layers, a sub-film layer closest to the light extraction layer is a low-stress inorganic layer, and a stress of the low-stress inorganic layer is less than a stress of the second inorganic encapsulation layer.

15 . The method of manufacturing a display substrate according to claim 14 , wherein the display substrate comprises a display region, and a binding region located on at least one side of the display region, and the light-emitting device layer is located in a region outside the binding region;

on the side of the light-emitting device layer away from the base, forming the first inorganic encapsulation layer, the organic encapsulation layer located on the side of the first inorganic encapsulation layer away from the base, and the second inorganic encapsulation layer located on the side of the organic encapsulation layer away from the base in sequence comprises:

forming the first inorganic encapsulation layer located in the display region and the binding region on the base,

removing a portion of the first inorganic encapsulation layer located in the binding region by etching the first inorganic encapsulation layer;

forming a color filter layer located outside the binding region on the first inorganic encapsulation layer, wherein the color filter layer comprises a plurality of color-resists arranged at intervals and black matrixes respectively located between adjacent color-resists, and the color filter layer further functions as the organic encapsulation layer;

forming the second inorganic encapsulation layer located in the display region and the binding region on the organic encapsulation layer, and

removing a portion of the second inorganic encapsulation layer located in the binding region by etching the second inorganic encapsulation layer.

16 . The method of manufacturing a display substrate according to claim 14 , wherein forming the first inorganic encapsulation layer comprises:

forming at least one low-stress inorganic layer; and

forming a first inorganic material layer on a side of the low-stress inorganic layer away from the base through Atomic Layer Deposition, wherein the first inorganic material layer is made of a material comprising a metal oxide.

17 . The display panel according to claim 12 , wherein the low-stress inorganic layer closest to the light extraction layer is made of a material comprising silicon oxynitride.

18 . The display panel according to claim 12 , wherein,

the first inorganic encapsulation layer comprises at least two low-stress inorganic layers, and

respective distances between the at least two low-stress inorganic layers and the light extraction layer are less than respective distances between other sub-film layers except the at least two low-stress inorganic layers in the first inorganic encapsulation layer and the light extraction layer.

19 . The display panel according to claim 18 , wherein the at least two low-stress inorganic layers comprise:

two silicon oxynitride film layers, and

a silicon nitride film layer located between the two silicon oxynitride film layers.

20 . The display panel according to claim 12 , wherein,

the plurality of sub-film layers comprise at least one low-stress inorganic layer,

the first inorganic encapsulation layer further comprises a first inorganic material layer located on a side of the at least one low-stress inorganic layer away from the base, and

the first inorganic material layer is made of a material comprising a metal oxide.

Assignments (1)

Continuity (1)

References Cited (27)