REFLECTIVE PHOTOMASK BLANK AND REFLECTIVE PHOTOMASK
There are provided a reflective photomask blank and a reflective photomask which improve the dimensional accuracy and the shape accuracy of a pattern to be transferred onto a wafer and enable the long use. A reflective photomask blank ( 10 ) according to this embodiment includes: a substrate ( 1 ); a reflective layer ( 2 ); and an absorption layer ( 4 ) in this order, in which the absorption layer ( 4 ) is a layer containing a material of a first material group and containing a material of a second material group, the content of the material of the first material group decreases from the side of the substrate ( 1 ) toward the side of an outermost surface ( 4 a ) of the absorption layer ( 4 ), and the content of the material of the second material group increases from the side of the substrate ( 1 ) toward the side of the outermost surface ( 4 a ) of the absorption layer ( 4 ). The first material group contains Te, Co, Ni, Pt, Ag, Sn, In, Cu, Zn, and Bi, and oxides, nitrides, and oxynitrides thereof. The second material group contains Ta, Cr, Al, Si, Ru, Mo, Zr, Ti, Zn, In, V, Hf, and Nb, and oxides, nitrides, and oxynitrides thereof.
1 . A reflective photomask blank for producing a reflective photomask for pattern transfer using an extreme ultraviolet as a light source,
the reflective photomask blank comprising:
a substrate;
a reflective part formed on the substrate to reflect an incident light; and
a low reflective part formed on the reflective part to absorb the incident light, wherein
the low reflective part is a layer containing at least one or more materials selected from a first material group and at least one or more materials selected from a second material group different from the first material group,
a content of the at least one or more materials selected from the first material group decreases from a side of the substrate toward a side of an outermost surface of the low reflective part,
a content of the at least one or more materials selected from the second material group increases from the side of the substrate toward the side of the outermost surface of the low reflective part,
the first material group contains tellurium (Te), cobalt (Co), nickel (Ni), platinum (Pt), silver (Ag), tin (Sn), indium (In), copper (Cu), zinc (Zn), and bismuth (Bi), and oxides, nitrides, and oxynitrides of tellurium (Te), cobalt (Co), nickel (Ni), platinum (Pt), silver (Ag), tin (Sn), indium (In), copper (Cu), zinc (Zn), and bismuth (Bi), and
the second material group contains tantalum (Ta), chromium (Cr), aluminum (Al), silicon (Si), ruthenium (Ru), molybdenum (Mo), zirconium (Zr), titanium (Ti), zinc (Zn), indium (In), vanadium (V), hafnium (Hf), and niobium (Nb), and oxides, nitrides, and oxynitrides of tantalum (Ta), chromium (Cr), aluminum (Al), silicon (Si), ruthenium (Ru), molybdenum (Mo), zirconium (Zr), titanium (Ti), zinc (Zn), indium (In), vanadium (V), hafnium (Hf), and niobium (Nb).
2 . The reflective photomask blank according to claim 1 , wherein
the low reflective part is a structure body in which, even when divided into a plurality of layers, a total film thickness of the entire low reflective part is at least 33 nm or more, and the at least one or more materials selected from the first material group are contained in a proportion of 20 at % or more in total in the entire low reflective part.
3 . The reflective photomask blank according to claim 1 , wherein
the low reflective part is a structure body in which, even when divided into a plurality of layers, a total film thickness of the entire low reflective part is at least 26 nm or more, and the at least one or more materials selected from the first material group are contained in a proportion of 55 at % or more in total in the entire low reflective part.
4 . The reflective photomask blank according to claim 1 , wherein
the low reflective part is a structure body in which, even when divided into a plurality of layers, a total film thickness of the entire low reflective part is at least 17 nm or more, and the at least one or more materials selected from the first material group are contained in a proportion of 95 at % or more in total in the entire low reflective part.
5 . The reflective photomask blank according to claim 2 , wherein
an outermost surface layer of the low reflective part is a structure body containing the at least one or more materials selected from the second material group in a proportion of 80 at % or more in total.
6 . The reflective photomask blank according to claim 1 , wherein
when a region having a depth within 50% from a surface of the low reflective part is the outermost surface layer of the low reflective part in a case where a thickness dimension of the low reflective part is 100%,
the outermost surface layer of the low reflective part is a structure body containing the at least one or more materials selected from the second material group in a proportion of 80 at % or more in total.
7 . The reflective photomask blank according to claim 2 , wherein the outermost surface layer of the low reflective part has a film thickness of 0.5 nm or more and 30 nm or less.
8 . A reflective photomask comprising:
a substrate;
a reflective part formed on the substrate to reflect an incident light; and
a low reflective part formed on the reflective part to absorb the incident light, wherein
the low reflective part is a layer containing at least one or more materials selected from a first material group and at least one or more materials selected from a second material group different from the first material group,
a content of the at least one or more materials selected from the first material group decreases from a side of the substrate toward a side of an outermost surface of the low reflective part, and
a content of the at least one or more materials selected from the second material group increases from the side of the substrate toward the side of the outermost surface of the low reflective part,
the first material group contains tellurium (Te), cobalt (Co), nickel (Ni), platinum (Pt), silver (Ag), tin (Sn), indium (In), copper (Cu), zinc (Zn), and bismuth (Bi), and oxides, nitrides, and oxynitrides of tellurium (Te), cobalt (Co), nickel (Ni), platinum (Pt), silver (Ag), tin (Sn), indium (In), copper (Cu), zinc (Zn), and bismuth (Bi), and
the second material group contains tantalum (Ta), chromium (Cr), aluminum (Al), silicon (Si), ruthenium (Ru), molybdenum (Mo), zirconium (Zr), titanium (Ti), zinc (Zn), indium (In), vanadium (V), hafnium (Hf), and niobium (Nb), and oxides, nitrides, and oxynitrides of tantalum (Ta), chromium (Cr), aluminum (Al), silicon (Si), ruthenium (Ru), molybdenum (Mo), zirconium (Zr), titanium (Ti), zinc (Zn), indium (In), vanadium (V), hafnium (Hf), and niobium (Nb).
9 . The reflective photomask blank according to claim 3 , wherein
an outermost surface layer of the low reflective part is a structure body containing the at least one or more materials selected from the second material group in a proportion of 80 at % or more in total.
10 . The reflective photomask blank according to claim 4 , wherein
an outermost surface layer of the low reflective part is a structure body containing the at least one or more materials selected from the second material group in a proportion of 80 at % or more in total.
11 . The reflective photomask blank according to claim 2 , wherein
when a region having a depth within 50% from a surface of the low reflective part is the outermost surface layer of the low reflective part in a case where a thickness dimension of the low reflective part is 100%,
the outermost surface layer of the low reflective part is a structure body containing the at least one or more materials selected from the second material group in a proportion of 80 at % or more in total.
12 . The reflective photomask blank according to claim 3 , wherein
when a region having a depth within 50% from a surface of the low reflective part is the outermost surface layer of the low reflective part in a case where a thickness dimension of the low reflective part is 100%,
the outermost surface layer of the low reflective part is a structure body containing the at least one or more materials selected from the second material group in a proportion of 80 at % or more in total.
13 . The reflective photomask blank according to claim 4 , wherein
when a region having a depth within 50% from a surface of the low reflective part is the outermost surface layer of the low reflective part in a case where a thickness dimension of the low reflective part is 100%,
the outermost surface layer of the low reflective part is a structure body containing the at least one or more materials selected from the second material group in a proportion of 80 at % or more in total.
14 . The reflective photomask blank according to claim 5 , wherein
when a region having a depth within 50% from a surface of the low reflective part is the outermost surface layer of the low reflective part in a case where a thickness dimension of the low reflective part is 100%,
the outermost surface layer of the low reflective part is a structure body containing the at least one or more materials selected from the second material group in a proportion of 80 at % or more in total.
15 . The reflective photomask blank according to claim 3 , wherein the outermost surface layer of the low reflective part has a film thickness of 0.5 nm or more and 30 nm or less.
16 . The reflective photomask blank according to claim 4 , wherein the outermost surface layer of the low reflective part has a film thickness of 0.5 nm or more and 30 nm or less.
17 . The reflective photomask blank according to claim 5 , wherein the outermost surface layer of the low reflective part has a film thickness of 0.5 nm or more and 30 nm or less.
18 . The reflective photomask blank according to claim 6 , wherein the outermost surface layer of the low reflective part has a film thickness of 0.5 nm or more and 30 nm or less.