Indium phosphide substrate, semiconductor epitaxial wafer, method for producing indium phosphide single-crystal ingot and method for producing indium phosphide substrate
Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, a method for producing an indium phosphide single-crystal ingot and a method for producing indium phosphide substrate capable of suppressing concave defects. An indium phosphide substrate has a diameter of 100 mm or less, and at least one of surfaces has zero concave defects detected in the topography channel, by irradiating a laser beam of 405 nm wavelength with S-polarized light on the surface.
1. An indium phosphide substrate,
wherein the indium phosphide substrate has a diameter of 100 mm or less, and
at least one of surfaces has zero concave defects detected in the topography channel, by irradiating a laser beam of 405 nm wavelength with S-polarized light on the surface.
2. The indium phosphide substrate according to claim 1 , wherein the indium phosphide substrate has a diameter of 50 to 100 mm.
3. A semiconductor epitaxial wafer, comprising the indium phosphide substrate according to claim 1 , and an epitaxial crystal layer on a main surface of the indium phosphide substrate.
4. A semiconductor epitaxial wafer, comprising the indium phosphide substrate according to claim 2 , and an epitaxial crystal layer on a main surface of the indium phosphide substrate.
5. A method for producing an indium phosphide single-crystal ingot,
wherein a crucible is installed in an LEC furnace, raw materials and an encapsulant are installed in the crucible, the raw materials and the encapsulant are heated and melted by a heater, and a seed crystal is brought into contact with a surface of a generated raw material melt and gradually pulled up to grow an indium phosphide single crystal, and
wherein the indium phosphide single crystal is grown by pulling up the seed crystal after increasing a temperature in the LEC furnace from room temperature to between 500° C. and 600° C. while maintaining a vacuum of 15 Pa or less, followed by increasing a pressure in the LEC furnace to any pressure in the range between 2.0×10 6 Pa and 4.0×10 6 Pa.
6. A method for producing an indium phosphide substrate, comprising
a process of cutting an indium phosphide substrate from the indium phosphide single-crystal ingot produced by the method for producing an indium phosphide single-crystal ingot according to claim 5 .
7. The method for producing an indium phosphide substrate according to claim 6 , wherein the indium phosphide substrate has a diameter of 100 mm or less.