ETCHING METHOD AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
An etching method including an etching step of bringing an etching gas which contains nitrosyl fluoride and has been converted into plasma into contact with a member to be etched ( 9 ) having an etching object and a non-etching object, and selectively etching the etching object as compared with the non-etching object. The etching step is performed in a chamber ( 7 ) containing the member to be etched ( 9 ) using a remote plasma generation device ( 16 ) provided outside the chamber ( 7 ) as a plasma generation source. The concentration of nitrosyl fluoride in the etching gas is 0.3 vol % or more, the temperature condition of the etching step is 0° C. to 250° C., and the pressure condition of the etching step is 100 Pa or more and 3 kPa or less. The etching object includes silicon nitride. Also disclosed is a method for producing a semiconductor device using the etching method.
1 . An etching method comprising:
an etching step of bringing an etching gas which contains nitrosyl fluoride and has been converted into plasma into contact with a member to be etched having an etching object which is an object to be etched by the etching gas and a non-etching object which is not an object to be etched by the etching gas and selectively etching the etching object as compared with the non-etching object, wherein
the etching step is performed in a chamber containing the member to be etched using a remote plasma generation device provided outside the chamber as a plasma generation source,
a concentration of the nitrosyl fluoride in the etching gas is 0.3% by volume or more, a temperature condition of the etching step is 0° C. or more and 250° C. or less, and a pressure condition of the etching step is 100 Pa or more and 3 kPa or less, and
the etching object includes silicon nitride.
2 . The etching method according to claim 1 , wherein a source power of the remote plasma generation device of the etching step is 100 W or more and 1 kW or less.
3 . The etching method according to claim 1 , wherein the non-etching object includes silicon oxide.
4 . The etching method according to claim 1 , wherein the etching gas is a mixed gas containing the nitrosyl fluoride and a dilution gas, the dilution gas is at least one selected from a nitrogen gas, helium, argon, neon, krypton, and xenon, and a concentration of the dilution gas in the etching gas is 99.7% by volume or less.
5 . The etching method according to claim 1 , wherein the temperature condition of the etching step is 5° C. or more and 200° C. or less.
6 . The etching method according to claim 1 , wherein the pressure condition of the etching step is 200 Pa or more and 2 kPa or less.
7 . The etching method according to claim 1 , wherein the source power of the remote plasma generation device of the etching step is 200 W or more and 900 W or less.
8 . A method for producing a semiconductor device for producing a semiconductor device using the etching method according to claim 1 ,
the member to be etched being a semiconductor substrate having the etching object and the non-etching object; the method comprising:
a treatment step of removing at least a part of the etching object from the semiconductor substrate by the etching.
9 . The etching method according to claim 2 , wherein the non-etching object includes silicon oxide.
10 . The etching method according to claim 2 , wherein the etching gas is a mixed gas containing the nitrosyl fluoride and a dilution gas, the dilution gas is at least one selected from a nitrogen gas, helium, argon, neon, krypton, and xenon, and a concentration of the dilution gas in the etching gas is 99.7% by volume or less.
11 . The etching method according to claim 3 , wherein the etching gas is a mixed gas containing the nitrosyl fluoride and a dilution gas, the dilution gas is at least one selected from a nitrogen gas, helium, argon, neon, krypton, and xenon, and a concentration of the dilution gas in the etching gas is 99.7% by volume or less.
12 . The etching method according to claim 2 , wherein the temperature condition of the etching step is 5° C. or more and 200° C. or less.
13 . The etching method according to claim 3 , wherein the temperature condition of the etching step is 5° C. or more and 200° C. or less.
14 . The etching method according to claim 4 , wherein the temperature condition of the etching step is 5° C. or more and 200° C. or less.
15 . The etching method according to claim 2 , wherein the pressure condition of the etching step is 200 Pa or more and 2 kPa or less.
16 . The etching method according to claim 3 , wherein the pressure condition of the etching step is 200 Pa or more and 2 kPa or less.
17 . The etching method according to claim 4 , wherein the pressure condition of the etching step is 200 Pa or more and 2 kPa or less.
18 . The etching method according to claim 5 , wherein the pressure condition of the etching step is 200 Pa or more and 2 kPa or less.
19 . The etching method according to claim 2 , wherein the source power of the remote plasma generation device of the etching step is 200 W or more and 900 W or less.
20 . The etching method according to claim 3 , wherein the source power of the remote plasma generation device of the etching step is 200 W or more and 900 W or less.