IP Library Granted Patent US 12,696,679
Granted Patent B2
US 12,696,679 · App. 18/039,311 · Granted Jul 28, 2026

Fullerene derivative and production method therefor

Inventors: Takeshi Igarashi (Kawasaki, JP); Chieko Nakagawa (Koriyama, JP)
Assignee: MITSUBISHI CORPORATION
H10K85/215C01B32/156C07C17/266C07C22/08C07C23/46C07D307/93C01P2006/40C07C2604/00H10K30/30
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,696,679
App. No.
18/039,311
Granted
Jul 28, 2026
Kind
B2
Abstract

A fullerene derivative having a partial structure shown in the following General Formula (1) is provided. (in Formula (1), C*'s are adjacent carbon atoms that form a fullerene framework. Rf 1 and Rf 2 each independently represents a perfluoroalkyl group having 1 to 4 carbon atoms, and Rf 1 and Rf 2 may be linked to each other to form a ring structure).

Claims (34)

1 . A fullerene derivative including

a fullerene framework, and

a partial structure represented by the following General Formula (1):

(in Formula (1), C*'s are adjacent carbon atoms that form the fullerene framework, Rf 1 and Rf 2 each independently represents a perfluoroalkyl group having 1 to 4 carbon atoms, and Rf 1 and Rf 2 may be linked to each other to form a ring structure),

wherein Rf 1 and Rf 2 are a trifluoromethyl group.

2 . The fullerene derivative according to claim 1 ,

wherein the fullerene framework is composed of C 60 , C 70 , C 74 , C 76 , or C 78 .

3 . The fullerene derivative according to claim 1 ,

wherein one fullerene framework includes one partial structure represented by Formula (1).

4 . A thin film comprising the fullerene derivative according to claim 1 .

5 . A photoelectric conversion element, comprising:

a first electrode and a second electrode that face each other; and

an organic layer disposed between the two electrodes,

wherein the organic layer contains the fullerene derivative according to claim 1 .

6 . A solid-state imaging device comprising the photoelectric conversion element according to claim 5 .

7 . A method for producing the fullerene derivative according to claim 1 , including

a process of reacting a fullerene and a compound represented by the following Formula (2) in the presence of a base:

(in Formula (2), X represents a halogen atom, and Rf 1 and Rf 2 are the same as those in Formula (1)).

8 . The method for producing a fullerene derivative according to claim 7 ,

wherein the base is at least one selected from the group consisting of a metal hydroxide, a metal carbonate, a metal alkoxide, pyridine, triethylamine, and diazabicycloundecene.

9 . The method for producing a fullerene derivative according to claim 8 ,

wherein the base is at least one selected from the group consisting of sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, cesium carbonate, sodium ethoxide, potassium ethoxide, potassium-tert-butoxide, pyridine, triethylamine, and diazabicycloundecene.

10 . The method for producing a fullerene derivative according to claim 7 ,

wherein X is iodine.

11 . The method for producing a fullerene derivative according to claim 7 ,

wherein the fullerene is C 60 , C 70 , C 74 , C 76 , or C 78 .

12 . The method for producing a fullerene derivative according to claim 7 ,

wherein a phase-transfer catalyst is used in the process of reacting the fullerene and the compound represented by Formula (2).

13 . The method for producing a fullerene derivative according to claim 12 ,

wherein the phase-transfer catalyst is at least one selected from the group consisting of 18-crown-6-ether, 15-crown-5-ether, and polyethylene glycol dimethyl ether.

14 . The method for producing a fullerene derivative according to claim 7 ,

wherein the process of reacting the fullerene and the compound represented by Formula (2) is performed at a temperature of −50° C. to 50° C.

15 . The method for producing a fullerene derivative according to claim 7 , further including

a process of mixing the fullerene and a solvent before the process of reacting the fullerene and the compound represented by Formula (2).

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 21, 2024
From: RESONAC CORPORATION
To: MITSUBISHI CORPORATION
Reel/Frame 067477/0458 →
CHANGE OF ADDRESS Recorded Feb 9, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066547/0677 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 30, 2023
From: IGARASHI, TAKESHI; NAKAGAWA, CHIEKO
To: RESONAC CORPORATION
Reel/Frame 063793/0867 →
Priority Claims (1)
JP 2020-204606 · Dec 9, 2020 · national
Continuity (1)
Related Publication 20240306486A1 · Sep 12, 2024
References Cited (16)
US 5382719A · Fagan · 1995 [cited by applicant]
US 20210376274A1 · Furukawa et al. · 2021 [cited by applicant]
JP 2013140923A · 2013 [cited by applicant]
JP 2016178130A · 2016 [cited by applicant]
JP 2019099570A · 2019 [cited by applicant]
JP 2019142775A · 2019 [cited by applicant]
KR 1020200133762A · 2020 [cited by applicant]
WO 2011033973A1 · 2011 [cited by applicant]
WO 2011033974A1 · 2011 [cited by applicant]
WO 2016194630A1 · 2016 [cited by applicant]
WO 2019182143A1 · 2019 [cited by applicant]
Korean Notice of Allowance dated Aug. 13, 2025 in Application No. 10-2023-7018924. [cited by applicant]
Brian J. Reeves et al., “Fluorous Fullerene Acceptors in Vacuum-Deposited Photovoltaic Cells”, Solar RRL, 2019, 9 pages, 3, 1900070. [cited by applicant]
Semivrazhskaya et al., “Lower trifluoromethyl[70]fullerene derivatives: novel structural data and an survey of electronic properties”, Electrochimica Acta, vol. 255, 2017, pp. 472-481. [cited by applicant]
Dorozhkin et al., “Synthesis, Structure, and Theoretical Study of Lower Trifluoromethyl Derivatives of [60]Fullerene”, Eur. J. Org. Chem., 2007, pp. 5082-5094. [cited by applicant]
Communication issued Apr. 9, 2025 in Korean Application No. 10-2023-7018924. [cited by applicant]