IP Library Granted Patent US 12,563,907
Granted Patent B2
US 12,563,907 · App. 18/041,991 · Granted Feb 24, 2026

Display panel and manufacture method therefor

Inventors: Zhiqiang Jiao (Beijing, CN); Lu Wang (Beijing, CN); Qingyu Huang (Beijing, CN); Peng Wang (Beijing, CN)
Assignee: BOE TECHNOLOGY GROUP CO., LTD.
H10K59/122H10K59/1201H10K59/38H10K59/873H10K71/80H10K59/877H10K59/8792H10K2102/351
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Quick Facts
Patent No.
US 12,563,907
App. No.
18/041,991
Granted
Feb 24, 2026
Kind
B2
Abstract

The present disclosure provides a display panel comprising a bottom emitting type array substrate and a wavelength converting unit, wherein the wavelength converting unit is in contact with a transparent substrate layer of the array substrate, and the transparent substrate layer has a thickness of 5 μm or less. The present disclosure also provides a method for manufacturing the display panel by using a subtractive manufacture process.

Claims (39)

1 . A display panel comprising:

a transparent substrate layer;

a thin film transistor layer on a side of the transparent substrate layer;

a first pixel defining layer on a side of the thin film transistor layer away from the transparent substrate layer and having a plurality of first openings;

a plurality of light emitting devices arranged in an array in the plurality of first openings and on the side of the thin film transistor layer away from the transparent substrate layer, wherein the light emitting devices are bottom emitting type light emitting devices;

a second pixel defining layer on a side of the transparent substrate layer away from the thin film transistor layer and having a plurality of second openings; and

a wavelength converting layer having a plurality of wavelength converting units, each of the wavelength converting units being disposed in one of the second openings and in contact with the transparent substrate layer;

wherein the transparent substrate layer has a thickness less than or equal to 5 μm.

2 . The display panel according to claim 1 , wherein the transparent substrate layer comprises a first organic layer, wherein the first organic layer is in contact with the wavelength converting unit and comprises a first organic material.

3 . The display panel according to claim 2 , wherein the second pixel defining layer and the first organic layer are made from the same material and have an integrated structure.

4 . The display panel according to claim 3 , wherein a lateral wall of the second pixel defining layer is covered with a reflecting material layer or a light-absorbing material layer.

5 . The display panel according to claim 2 , wherein the first organic material is polyimide.

6 . The display panel according to claim 2 , wherein the transparent substrate layer further comprises a first inorganic layer in contact with the first organic layer.

7 . The display panel according to claim 6 , wherein a material for the first inorganic layer comprises one or more selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.

8 . The display panel according to claim 6 , wherein the transparent substrate layer further comprises a second organic layer, and the first inorganic layer is sandwiched between the first organic layer and the second organic layer.

9 . The display panel according to claim 1 , wherein the second pixel defining layer comprises a carbonized organic material.

10 . The display panel according to claim 1 , wherein a sum of thicknesses of the transparent substrate layer and the second pixel defining layer is greater than or equal to 10 μm.

11 . The display panel according to claim 1 , wherein the light emitting layer comprises devices comprise an OLED having a blue light emitting layer.

12 . The display panel according to claim 11 , wherein the OLED having a blue light emitting layer further has a cyan light emitting layer, a red light emitting layer, a green light emitting layer and/or a yellow light emitting layer which is/are stacked with the blue light emitting layer.

13 . The display panel according to claim 1 , wherein the wavelength converting unit comprises one or more selected from the group consisting of an organic fluorescent down-converting material, an organic fluorescent up-converting material, a quantum dot down-converting material and a rare earth up-converting material.

14 . The display panel according to claim 1 , further comprising:

a transparent scattering unit on the side of the transparent substrate layer away from the thin film transistor layer, wherein the transparent scattering unit is in contact with the transparent substrate layer and is defined by the second pixel defining layer.

15 . The display panel according to claim 1 , further comprising:

a color film unit on a side of the wavelength converting unit away from the transparent substrate layer.

16 . The display panel according to claim 1 , wherein an orthogonal projection of the wavelength converting unit on the transparent substrate layer has an area greater than that of an orthogonal projection of the light emitting device on the transparent substrate layer.

17 . A method for manufacturing the display panel according to claim 1 , comprising:

(i) forming a base film on a temporary base substrate, such that the base film is transparent in a thickness of at least 5 μm from a surface on a side away from the temporary base substrate;

(ii) forming a thin film transistor layer and a light emitting device layer sequentially on a side of the base film away from the temporary base substrate to form a bottom emitting type array substrate;

(iii) peeling off the temporary base substrate to expose a surface of the base film on a side away from the thin film transistor layer;

(iv) etching the exposed surface to form an array of pits, wherein the base film remained at the pits has a thickness of 5 μm or less; and

(v) filling the pits with a wavelength converting material to form a wavelength converting unit.

18 . The method according to claim 17 , wherein,

in step (i), the base film is fully transparent; and

in step (v), before filling with the wavelength converting material, a reflecting material layer or a light-absorbing material layer is formed on a lateral wall of each of the pits.

19 . The method according to claim 17 , wherein,

the base film comprises an opaque first sub-layer and a transparent second sub-layer, and

in step (i), the opaque first sub-layer is firstly formed on the temporary base substrate, and the transparent second sub-layer is then formed on a side of the opaque first sub-layer away from the temporary base substrate.

20 . The method according to claim 19 , wherein,

the opaque first sub-layer is obtained by carbonizing a transparent organic material layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 16, 2023
From: JIAO, ZHIQIANG; WANG, LU; HUANG, QINGYU; WANG, PENG
To: BOE TECHNOLOGY GROUP CO., LTD.
Reel/Frame 062726/0733 →
Priority Claims (1)
CN 202110715837.4 · Jun 25, 2021 · national
Continuity (1)
Related Publication 20230329041A1 · Oct 12, 2023
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