IP Library Granted Patent US 11,832,006
Granted Patent B2
US 11,832,006 · App. 18/045,985 · Granted Nov 28, 2023

Image sensor with active capacitance cancellation circuitry to reduce pixel output settling time

Inventor: Shankar Ramakrishnan (Bangalore, IN)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H04N25/67H04N25/77
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Quick Facts
Patent No.
US 11,832,006
App. No.
18/045,985
Granted
Nov 28, 2023
Kind
B2
Abstract

An image sensor may include an array of image pixels arranged in rows and columns. Each column of pixels may be coupled to current source transistors and capacitance cancellation circuitry. The capacitance cancellation circuitry may include capacitors, a common source amplifier transistor, an autozero switch, a switch for selectively deactivating at least one of the capacitors during sample-and-hold reset and sample-and-hold signal operations.

Claims (47)

1. An optical sensor comprising:

a pixel;

an output line coupled to the pixel;

a cascode transistor having a drain terminal coupled to the output line, a source terminal coupled to a ground line, and a gate terminal; and

a common source amplifier transistor having a source terminal coupled to the ground line, a drain terminal coupled to the gate terminal of the cascode transistor, and a gate terminal coupled to the source terminal of the cascode transistor.

2. The optical sensor of claim 1 , further comprising:

a current source transistor having a drain terminal coupled to the source terminal of the cascode transistor, a source terminal coupled to the ground line, and a gate terminal configured to receive a bias voltage.

3. The optical sensor of claim 1 , further comprising:

a current source transistor coupled in series with the cascode transistor.

4. The optical sensor of claim 1 , further comprising:

a current sink transistor coupled between the output line and the common source amplifier transistor.

5. The optical sensor of claim 4 , wherein the current sink transistor has a gate terminal coupled to the output line and a source terminal coupled to the drain terminal of the common source amplifier transistor.

6. The optical sensor of claim 5 , wherein the current sink transistor has a drain terminal coupled to the ground line.

7. The optical sensor of claim 5 , wherein the current sink transistor comprises a p-type transistor and wherein the common source amplifier transistor comprises an n-type transistor.

8. The optical sensor of claim 1 , further comprising:

an enable transistor having a drain terminal coupled to the source terminal of the cascode transistor, a source terminal coupled to the ground line, and a gate terminal configured to receive an enable signal.

9. The optical sensor of claim 1 , further comprising:

an autozero switch coupled between the source terminal of the cascode transistor and the gate terminal of the common source amplifier transistor.

10. The optical sensor of claim 1 , further comprising:

a capacitor having a first terminal coupled to the drain terminal of the cascode transistor and having a second terminal coupled to the gate terminal of the common source amplifier transistor.

11. The optical sensor of claim 1 , further comprising:

a capacitor having a first terminal coupled to the source terminal of the cascode transistor and having a second terminal coupled to the gate terminal of the common source amplifier transistor.

12. The optical sensor of claim 1 , further comprising:

a capacitor having a first terminal coupled to the source terminal of the cascode transistor and having a second terminal coupled to an enable switch.

13. Imaging circuitry comprising:

a pixel;

an output line coupled to the pixel;

a first transistor having a first source-drain terminal coupled to the output line and having a second source-drain terminal coupled to a power supply line; and

a second transistor coupled to the first transistor in a feedback arrangement such that a change in voltage at the first source-drain terminal of the first transistor causes an opposite change in voltage at the second source-drain terminal of the first transistor.

14. The imaging circuitry of claim 13 , further comprising:

a current source transistor having a first source-drain terminal coupled to the second source-drain terminal of the first transistor, a second source-drain terminal coupled to the power supply line, and a gate terminal configured to receive a bias voltage.

15. The imaging circuitry of claim 13 , further comprising:

a first capacitor having a first terminal coupled to the first source-drain terminal of the first transistor and having a second terminal coupled to a gate terminal of the second transistor.

16. The imaging circuitry of claim 15 , further comprising:

a second capacitor having a first terminal coupled to the second source-drain terminal of the first transistor and having a second terminal coupled to the gate terminal of the second transistor.

17. The imaging circuitry of claim 16 , further comprising:

a third capacitor having a first terminal coupled to the second source-drain terminal of the first transistor and having a second terminal coupled to an enable switch.

18. A sensor comprising:

an optical sensor pixel;

an output line coupled to the optical sensor pixel; and

capacitance cancellation circuitry coupled to the output line and including at least one transistor and at least one capacitor configured to at least partially cancel a capacitance on the output line.

19. The sensor of claim 18 , wherein the capacitance cancellation circuitry comprises:

a first transistor having a first source-drain terminal coupled to the output line; and

a second transistor having a source-drain terminal coupled to a gate terminal of the first transistor and having a gate terminal coupled to a second source-drain terminal of the first transistor.

20. The sensor of claim 18 , wherein the capacitance cancellation circuitry comprises:

a first capacitor coupled between a first source-drain terminal of the at least one transistor and a node; and

a second capacitor coupled between a second source-drain terminal of the at least one transistor and the node.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS PREVIOUSLY RECORDED AT REEL 062882, FRAME 0265 Recorded Aug 16, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 064615/0423 →
SECURITY INTEREST Recorded Feb 24, 2023
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 062882/0265 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 12, 2022
From: RAMAKRISHNAN, SHANKAR
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 061395/0305 →