Top contact structure for embedded MRAM
Embodiments of present invention provide a method of forming a MRAM structure. The method includes forming at least one magnetic tunnel junction (MTJ) stack on top of a supporting structure; forming a conformal liner surrounding a sidewall of the MTJ stack; forming a first dielectric layer surrounding the conformal liner; selectively forming a metal oxide layer on top of the conformal liner and the first dielectric layer, the metal oxide layer having at least a first opening that exposes a top surface of the MTJ stack; and forming a top contact contacting the top surface of the MTJ stack through the first opening in the metal oxide layer. An MRAM structure formed thereby is also provided.
1 . A MRAM device comprising:
a MRAM structure, the MRAM structure comprising:
a magnetic tunnel junction (MTJ) stack; and
a top contact, the top contact having a first portion directly above the MTJ stack and a second portion above the first portion, wherein the first portion of the top contact is horizontally surrounded by a metal oxide layer, and a portion of the second portion is directly above the metal oxide layer; and
a conductive via extending through a conformal liner and partially into a dielectric layer underneath the conformal liner, the conformal liner covering sidewalls of the MTJ stack.
2 . The MRAM device of claim 1 , further comprising:
a via contact in contact with the conductive via, wherein the via contact has a first portion and a second portion, the first portion of the via contact is directly above the conductive via and has a substantially same size as that of the conductive via at an interface with the conductive via, and the second portion of the via contact is above the first portion of the via contact and is partially above the metal oxide layer.
3 . The MRAM device of claim 1 , wherein a top surface of the MTJ stack is substantially coplanar with a top surface of the conductive via.
4 . The MRAM device of claim 1 , wherein the first portion of the top contact is vertically aligned with a top surface of the MTJ stack.
5 . The MRAM device of claim 1 , wherein the conformal liner at the sidewalls of the MTJ stack is vertically covered by the metal oxide layer.
6 . The MRAM device of claim 1 , wherein the metal oxide layer comprises either aluminum-oxide (AlOx) or hafnium-oxide (HfOx).
7 . The MRAM device of claim 1 , wherein the MTJ stack includes a bottom electrode, the bottom electrode being on top of a conductive pedestal and the conductive pedestal being formed on top of a metal layer in a back-end-of-line (BEOL) structure.
8 . A semiconductor structure comprising:
a MRAM structure, the MRAM structure comprising:
a magnetic tunnel junction (MTJ) stack;
a metal oxide layer being above a level of the MTJ stack;
a top contact being in direct contact with a top surface of the MTJ stack through a first opening in the metal oxide layer; and
a via contact in contact with a conductive via through a second opening in the metal oxide layer, wherein the via contact has a first portion and a second portion, the second portion being on top of the first portion and partially on top of the metal oxide layer and the first portion being surrounded horizontally by the metal oxide layer,
wherein the conductive via extends through a conformal liner into a dielectric layer, with the conformal liner covering the dielectric layer and sidewalls of the MTJ stack, and has a top surface that is substantially coplanar with the top surface of the MTJ stack.
9 . The semiconductor structure of claim 8 , wherein the first opening in the metal oxide layer is vertically aligned with the top surface of the MTJ stack.
10 . The semiconductor structure of claim 8 , wherein the first opening in the metal oxide layer has a substantially same size and a substantially same shape as that of the top surface of the MTJ stack.
11 . The semiconductor structure of claim 8 , wherein a first portion of the top contact is surrounded by the metal oxide layer and a second portion of the top contact is surrounded by a dielectric layer, and wherein the metal oxide layer and the dielectric layer are made of different materials to have different etch selectivity.
12 . The semiconductor structure of claim 8 , wherein the metal oxide layer comprises a material selected from a group consisting of aluminum-oxide (AlOx) and hafnium-oxide (HfOx).
13 . A MRAM device comprising:
a first and a second MRAM structure, the first and the second MRAM structure each comprising:
a magnetic tunnel junction (MTJ) stack;
a top contact of a first portion and a second portion, the first portion being directly above the MTJ stack and horizontally surrounded by a metal oxide layer, and the second portion being directly and partially above the metal oxide layer; and
a bottom contact embedded in a dielectric layer;
a conductive via between the first and the second MRAM structure; and
a conformal liner covering continuously a sidewall of the first MRAM structure, a top surface of the dielectric layer between the first and the second MRAM structure, and a sidewall of the second MRAM structure, the conductive via vertically extending through the conformal liner into the dielectric layer.
14 . The MRAM device of claim 13 , further comprising:
a via contact in contact with the conductive via, wherein the via contact has a first portion and a second portion, the first portion of the via contact is directly above the conductive via and has a same size as that of the conductive via at an interface with the conductive via, and the second portion of the via contact is above the first portion of the via contact and partially above the metal oxide layer.
15 . The MRAM device of claim 13 , wherein a top surface of the MTJ stack of the first MRAM structure is coplanar with a top surface of the conductive via.
16 . The MRAM device of claim 13 , wherein the first portion of the top contact of the first MRAM structure is vertically aligned with a top surface of the MTJ stack of the first MRAM structure.
17 . The MRAM device of claim 13 , wherein the metal oxide layer comprises either aluminum-oxide (AlOx) or hafnium-oxide (HfOx).
18 . The MRAM device of claim 13 , wherein the MTJ stack of the first MRAM structure includes a bottom electrode, the bottom electrode being on top of a conductive pedestal and the conductive pedestal being formed on top of a metal layer in a back-end-of-line (BEOL) structure.