Semiconductor devices having cell array and peripheral regions therein
A semiconductor device includes a substrate having first and second active patterns therein, which are spaced apart from each other. The first active pattern has a top surface that is elevated relative to a top surface of the second active pattern. A channel semiconductor layer is provided on the top surface of the first active pattern. A first gate pattern is provided, which includes a first insulating pattern, on the channel semiconductor layer. A second gate pattern is provided, which includes a second insulating pattern having a thickness greater than a thickness of the first insulating pattern, on the top surface of the second active pattern.
1 . A semiconductor device comprising:
a substrate having first and second active patterns therein, which are spaced apart from each other, said first active pattern having a top surface that is elevated relative to a top surface of the second active pattern;
a channel semiconductor layer on the top surface of the first active pattern, wherein a lattice constant of the channel semiconductor layer is greater than a lattice constant of the substrate;
a first gate pattern including a first insulating pattern, on the channel semiconductor layer; and
a second gate pattern including a second insulating pattern having a thickness greater than a thickness of the first insulating pattern, on the top surface of the second active pattern.
2 . The device of claim 1 , wherein a first portion of the second insulating pattern extends at a lower level relative to the top surface of the first active pattern, and a second portion of the second insulating pattern extends at a higher level than the top surface of the first active pattern, as measured in a direction normal to the top surface of the second active pattern.
3 . The device of claim 2 , wherein a thickness of the first portion is in a range from about 0.5 times to about 2 times a thickness of the second portion.
4 . The device of claim 1 , wherein a thickness of the second insulating pattern is in a range from about 2 times to about 10 times a thickness of the first insulating pattern.
5 . The device of claim 1 ,
wherein the first gate pattern further comprises a first high-k dielectric pattern on the first insulating pattern;
wherein the second gate pattern further comprises a second high-k dielectric pattern on the second insulating pattern; and
wherein each of the first and second high-k dielectric patterns includes a material having a dielectric constant greater than a dielectric constant of silicon oxide.
6 . The device of claim 1 , wherein a width of the first gate pattern is less than a width of the second gate pattern.
7 . The device of claim 1 , further comprising:
spacers covering side surfaces of the first and second gate patterns;
an interlayer insulating layer covering the second gate pattern and the spacers; and
a capping layer on the interlayer insulating layer.
8 . The device of claim 7 , wherein a top surface of the interlayer insulating layer is substantially coplanar with a top surface of the first gate pattern.
9 . The device of claim 1 , wherein each of the first and second active patterns includes an active semiconductor fin vertically protruding upward from a lower portion of each of the first and second active patterns.
10 . The device of claim 1 ,
wherein the first gate pattern further includes a first conductive pattern on the first insulating pattern;
wherein the first active pattern includes a channel layer therein, which extends between a buried portion of the first conductive pattern and a portion of the first conductive pattern on the top surface of the first active pattern, which is spaced apart from the buried portion of the first conductive pattern.
11 . The device of claim 10 , wherein the channel semiconductor layer covers a top surface and a bottom surface of the channel layer within the first active pattern.
12 . A semiconductor device, comprising:
a substrate having first, second, third, and fourth active patterns therein, which are spaced apart from each other;
first to fourth gate patterns extending on the first, second, third, and fourth active patterns, respectively; and
a channel semiconductor layer extending between the third active pattern and the third gate pattern, wherein a lattice constant of the channel semiconductor layer is greater than a lattice constant of the substrate;
wherein the first gate pattern comprises a first insulating pattern, a first high-k dielectric pattern and a first conductive pattern, which are sequentially stacked on the first active pattern;
wherein the second gate pattern comprises a second insulating pattern, a second high-k dielectric pattern and a second conductive pattern, which are sequentially stacked on the second active pattern;
wherein the third gate pattern comprises a third insulating pattern, a third high-k dielectric pattern and a third conductive pattern, which are sequentially stacked on the channel semiconductor layer;
wherein the fourth gate pattern comprises a fourth insulating pattern, a fourth high-k dielectric pattern and a fourth conductive pattern, which are sequentially stacked on the fourth active pattern;
wherein a thickness of each of the second and fourth insulating patterns is greater than a thickness of each of the first and third insulating patterns; and
wherein a top surface of the third active pattern is located at a higher level than a top surface of each of the second and fourth active patterns.
13 . The device of claim 12 , wherein the top surface of the third active pattern is located at a higher level than a top surface of the first active pattern.
14 . The device of claim 12 , wherein the top surface of the third active pattern is located at substantially the same level as a top surface of the first active pattern.
15 . The device of claim 12 ,
wherein each of the second and fourth insulating patterns includes: (i) a first portion located at a lower level than the top surface of the third active pattern, and (ii) a second portion located at a higher level than the top surface of the third active pattern; and
wherein a ratio of a first thickness of the first portion to a total thickness of each of the second and fourth insulating patterns ranges from about 30% to about 70%.
16 . The device of claim 12 , wherein the channel semiconductor layer includes silicon-germanium (SiGe).
17 . The device of claim 12 , wherein the first to fourth conductive patterns include doped polysilicon; and wherein a conductivity type of the first and second conductive patterns is different from a conductivity type of the third and fourth conductive patterns.
18 . A semiconductor device, comprising:
a substrate including: (i) cell active patterns on a cell array region, and (i) a first peripheral active pattern and a second peripheral active pattern that are spaced apart from each other on a peripheral region, in a vicinity of the cell array region;
word lines extending on the substrate, and intersecting the cell active patterns;
bit lines extending on the substrate, and intersecting the word lines;
a bit line contact extending on a central portion of each of the cell active patterns, and connected to each of the bit lines;
a storage node contact on each of both end portions of each of the cell active patterns;
a landing pad on the storage node contact;
a data storage element on the landing pad;
a first peripheral gate pattern on the first peripheral active pattern;
a channel semiconductor layer between the first peripheral active pattern and the first peripheral gate pattern, wherein a lattice constant of the channel semiconductor layer is greater than a lattice constant of the substrate; and
a second peripheral gate pattern on the second peripheral active pattern;
wherein the first peripheral gate pattern includes a first peripheral insulating pattern on the channel semiconductor layer;
wherein the second peripheral gate pattern includes a second peripheral insulating pattern on the second peripheral active pattern;
wherein a thickness of the second peripheral insulating pattern is greater than a thickness of the first peripheral insulating pattern; and
wherein a top surface of the first peripheral active pattern and top surfaces of the cell active patterns are located at a higher level than a top surface of the second peripheral active pattern.
19 . The semiconductor device of claim 18 , wherein the data storage element comprises a capacitor including a lower electrode, a dielectric layer, and an upper electrode.
20 . The semiconductor device of claim 18 , wherein a first portion of the second peripheral insulating pattern extends at a lower level relative to the top surface of the first peripheral active pattern, and a second portion of the second peripheral insulating pattern extends at a higher level than the top surface of the first peripheral active pattern, as measured in a direction normal to the top surface of the second peripheral active pattern.