Bonded body, ceramic copper circuit substrate, and semiconductor device
A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer that is located on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes titanium. The bonding layer includes first and second regions; the first region includes a layer including titanium as a major component; the layer is formed at an interface of the bonding layer with the ceramic substrate; and the second region is positioned between the first region and the copper plate. The bonded body has a ratio M1/M2 of a titanium concentration M1 at % in the first region and a titanium concentration M2 at % in the second region that is not less than 0.1 and not more than 5 when the Ti concentrations are measured by EDX respectively in measurement regions in the first and second regions.
1. A bonded body, comprising:
a ceramic substrate;
a copper plate; and
a bonding layer located on at least one surface of the ceramic substrate,
the bonding layer bonding the ceramic substrate and the copper plate,
the bonding layer including titanium,
the bonding layer including
a first region including a layer, the layer being formed at an interface of the bonding layer with the ceramic substrate, the layer including titanium as a major component, and
a second region positioned between the first region and the copper plate, wherein
a ratio M1/M2 of a titanium concentration M1 at % in the first region and a titanium concentration M2 at % in the second region being not less than 0.5 and not more than 5 when the Ti concentrations are measured by EDX respectively in measurement regions in the first and second regions, each of the measurement regions having an area of 200 μm×thickness, and
the titanium concentration M2 in the second region is within a range of not less than 0.5 at % and not more than 15 at %.
2. The bonded body according to claim 1 , wherein
the ratio M1/M2 is within a range of not less than 0.5 and not more than 4.
3. The bonded body according to claim 1 , wherein
a Ti concentration fluctuation between different measurement regions in the second region is within ±20%.
4. The bonded body according to claim 1 , wherein
a thickness of the first region is not more than 5 μm.
5. The bonded body according to claim 1 , wherein
a thickness of the copper plate is not less than 0.6 mm.
6. The bonded body according to claim 1 , wherein
the ceramic substrate is one selected from a silicon nitride substrate and an aluminum nitride substrate.
7. The bonded body according to claim 1 , wherein
the second region includes one or two selected from silver and copper.
8. The bonded body according to claim 1 , wherein
the second region includes one or two selected from tin and indium.
9. The bonded body according to claim 1 , wherein
the copper plate is located at two surfaces of the ceramic substrate.
10. A ceramic copper circuit substrate, comprising:
the bonded body according to claim 1 ; and
the copper plate located on at least one surface of the ceramic substrate is provided with a circuit structure.
11. The bonded body according to claim 1 , wherein
a Ti concentration fluctuation between the measurement regions in the second region is within ±20%, and
a thickness of the first region is not more than 5 μm.
12. The bonded body according to claim 11 , wherein
a thickness of the copper plate is not less than 0.6 mm.
13. The bonded body according to claim 12 , wherein
the ceramic substrate is one selected from a silicon nitride substrate and an aluminum nitride substrate.
14. The bonded body according to claim 13 , wherein
the second region includes one or two selected from silver and copper and includes one or two selected from tin and indium.
15. The bonded body according to claim 14 , wherein
the copper plate is located at two surfaces of the ceramic substrate.
16. A ceramic copper circuit substrate, comprising:
the bonded body according to claim 15 ; wherein
the copper plate located on at least one surface of the ceramic substrate is provided with a circuit structure.
17. A semiconductor device, comprising:
the ceramic copper circuit substrate according to claim 10 ; and
a semiconductor element mounted on the copper plate provided with the circuit structure.