Cover structure arrangements for light emitting diode packages
Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly cover structure arrangements for packaged LED devices are disclosed. Cover structures include light-absorbing layers configured to absorb certain wavelengths of light while permitting other wavelengths to pass therethrough. Light-absorbing layers may include pigment materials of colors that absorb intended wavelengths of light. In certain aspects, an LED package may include an LED chip configured to emit light of a first peak wavelength and a cover structure that includes a light-absorbing layer with a pigment of a color that absorbs the first peak wavelength. Such an arrangement may be useful for embodiments that also include a lumiphoric material that converts a portion of the first peak wavelength to light of a second peak wavelength. Cover structures may include one or more combinations of light-absorbing layers, antireflective layers, and reflective layers for providing improved emission characteristics for the LED package.
1 . A light-emitting diode (LED) package comprising:
a submount;
at least one LED chip on the submount, the at least one LED chip being configured to emit light having a first peak wavelength;
a cover structure on the at least one LED chip, the cover structure comprising a superstrate and a light-absorbing layer with a pigment material that absorbs the first peak wavelength; and
a lumiphoric material on the at least one LED chip, the superstrate being arranged between the lumiphoric material and the light-absorbing layer and the light-absorbing layer being further arranged on at least one sidewall of the cover structure without extending to sidewalls of the lumiphoric material.
2 . The LED package of claim 1 , wherein the lumiphoric material is arranged between the light-absorbing layer and the at least one LED chip, and the lumiphoric material is configured to convert a portion of the light of the first peak wavelength to light of a second peak wavelength.
3 . The LED package of claim 2 , wherein the light-absorbing layer is light-transparent to the light of the second peak wavelength.
4 . The LED package of claim 3 , wherein the first peak wavelength is in a range from 430 nanometers (nm) to 480 nm and the second peak wavelength is in a range from greater than 500 nm to 650 nm.
5 . The LED package of claim 1 , wherein the light-absorbing layer is further arranged on at least one sidewall of the superstrate.
6 . The LED package of claim 1 , further comprising a light-altering material on the submount and arranged around a perimeter of the at least one LED chip, wherein sidewalls of the cover structure are covered by the light-altering material.
7 . The LED package of claim 6 , wherein sidewalls of the light-absorbing layer are at least partially covered by the light-altering material.
8 . A light-emitting diode (LED) package comprising:
a submount;
at least one LED chip on the submount, the at least one LED chip being configured to emit light having a first peak wavelength;
a lumiphoric material that is arranged to convert a portion of the light of the first peak wavelength to light of a second peak wavelength;
a light-absorbing layer with a pigment material that absorbs the first peak wavelength, the lumiphoric material being arranged between the light-absorbing layer and the at least one LED chip; and
a superstrate between the lumiphoric material and the light-absorbing layer, the superstrate being light-transparent to light of the first peak wavelength and light of the second peak wavelength, wherein the light-absorbing layer is on at least one sidewall of the superstrate without extending to sidewalls of the lumiphoric material.
9 . The LED package of claim 8 , wherein the light-absorbing layer is light-transparent to the light of the second peak wavelength.
10 . The LED package of claim 8 , further comprising
a light-altering material on the submount and around a perimeter of the at least one LED chip.