Light emitting diode device
A light emitting diode device includes a substrate, a frame, an LED die and a transparent layer. The frame is located on the substrate. The frame and the substrate collectively define a concave portion. The frame has a light reflectivity ranging from 20% to 40%. The LED die is located on the substrate and within the concave portion. The transparent layer is filled into the concave portion and covering the LED die, wherein the LED die has a side-emitting surface and a top-emitting surface, the side-emitting surface has a luminous intensity greater than that of the top-emitting surface.
1. A light emitting diode device comprising:
a substrate;
a frame disposed on the substrate, the frame and the substrate collectively defining a concave portion, the frame comprising aromatic ring bonded high-grade fat-locked semi-aromatic nylon resin and polyphthalamide, and having a light reflectivity ranging from 20% to 40%;
an LED die disposed on the substrate and within the concave portion; and
a transparent layer filled into the concave portion and covering the LED die, wherein the LED die has a side-emitting surface and a top-emitting surface, the side-emitting surface has a luminous intensity greater than that of the top-emitting surface.
2. The light emitting diode device of claim 1 , wherein the frame has a refractive index between 1.41 and 1.6.
3. The light emitting diode device of claim 1 , wherein the frame includes 10% to 50% long fibers.
4. The light emitting diode device of claim 1 , wherein the transparent layer has a top surface that is lower or higher than a top end of the frame.
5. The light emitting diode device of claim 1 , wherein the LED die has a bottom surface bonded to the substrate, and the bottom surface is a light-reflective surface.
6. The light emitting diode device of claim 1 , wherein the side-emitting surface has a luminous intensity 10%-60% greater than that of the top-emitting surface.
7. The light emitting diode device of claim 1 , wherein the LED die is mounted on electrodes of the substrate in a flip-chip manner or wire-bonded to electrodes of the substrate.
8. The light emitting diode device of claim 1 , wherein the transparent layer includes silicon-based materials.
9. The light emitting diode device of claim 8 , wherein the silicon-based materials include at least one of phenyl silicone resin and methyl silicone resin.
10. A light emitting diode device comprising:
a substrate;
a frame disposed on the substrate, the frame and the substrate collectively defining a concave portion, the frame comprising aromatic ring bonded high-grade fat-locked semi-aromatic nylon resin and polyethylene terephthalate, and having a light reflectivity ranging from 20% to 40%;
an LED die disposed on the substrate and within the concave portion; and
a transparent layer filled into the concave portion and covering the LED die, wherein the LED die has a side-emitting surface and a top-emitting surface, the side-emitting surface has a luminous intensity greater than that of the top-emitting surface.
11. The light emitting diode device of claim 10 , wherein the frame has a refractive index between 1.41 and 1.6.
12. The light emitting diode device of claim 10 , wherein the frame includes 10% to 50% long fibers.
13. The light emitting diode device of claim 10 , wherein the transparent layer has a top surface that is lower or higher than a top end of the frame.
14. The light emitting diode device of claim 10 , wherein the LED die has a bottom surface bonded to the substrate, and the bottom surface is a light-reflective surface.
15. The light emitting diode device of claim 10 , wherein the side-emitting surface has a luminous intensity 10%-60% greater than that of the top-emitting surface.
16. The light emitting diode device of claim 10 , wherein the LED die is mounted on electrodes of the substrate in a flip-chip manner or wire-bonded to electrodes of the substrate.
17. The light emitting diode device of claim 10 , wherein the transparent layer includes silicon-based materials.
18. The light emitting diode device of claim 17 , wherein the silicon-based materials include at least one of phenyl silicone resin and methyl silicone resin.